Abstract: Disclosed is a silver ion water generating apparatus which can improve sterilizing and purifying forces even in a large water tank by widening the contact surface of silver as same weight increasing the amount of the generated silver ions, can be easily maintained by facilitating the exchange of a silver foam, and can prevent the silver ion water from not being properly generated due to the inferiority of current flow between the silver foam and the electrode terminal in use. The silver ion generating apparatus is consist of a water tank for storing water and positive and negative electrodes installed in the interior of the water tank. The positive electrode includes a silver foam in which open cells are formed. A plurality of conductive net bodies connected to an exterior positive electrode terminal are detachably installed in the interior of the water tank. Each silver foam is accommodated in the interior of the conductive net body.

Abstract: An integrated monitoring method and a system using the same which can monitor structural integrity or an operating state of a nuclear device are provided. One integrated analysis unit receives a plurality of signals in order to integrate, mutually exchange, and analyze from a plurality of heterogeneous sensors installed in the nuclear device. The integrated analysis unit may notify an operator with an alarm since an alarm unit may be adhered to the integrated analysis unit. Accordingly, the present invention may provide accurate, useful, and various information due to integration of the sensor signal while not increasing a number of installed sensors, manufacture a simulator by generating a database of the sensor signals, or use a past signal as data for an optimum design by researching and analyzing the past signal.

Abstract: An electron emission device which can uniformly emit electrons and can be simply manufactured at a reduced cost, and a display apparatus having improved uniform brightness of pixels by using the electron emission device. In addition, a simple method of manufacturing the electron emission device. The electron emission device includes: a first substrate; a cathode electrode and an electron emission unit disposed on the first substrate; a gate electrode electrically insulated from the cathode electrode; an insulating layer disposed between the cathode electrode and the gate electrode to insulate the cathode electrode from the gate electrode; and an electron emission source including carbon nanotubes (CNTs) that contact the cathode electrode, wherein distances between the gate electrode and the tips of the CNTs are uniform.

Abstract: A method of forming a Carbon NanoTube (CNT) structure and a method of manufacturing a Field Emission Device (FED) using the method of forming a CNT structure includes: forming an electrode on a substrate, forming a buffer layer on the electrode, forming a catalyst layer in a particle shape on the buffer layer, etching the buffer layer exposed through the catalyst layer, and growing CNTs from the catalyst layer formed on the etched buffer layer.

Abstract: In accordance with one embodiment of the present invention, a power semiconductor device includes a first drift region of a first conductivity type extending over a semiconductor substrate. The first drift region has a lower impurity concentration than the semiconductor substrate. A second drift region of the first conductivity type extends over the first drift region, and has a higher impurity concentration than the first drift region. A plurality of stripe-shaped body regions of a second conductivity type are formed in an upper portion of the second drift region. A third region of the first conductivity type is formed in an upper portion of each body region so as to form a channel region in each body region between the third region and the second drift region. A gate electrode laterally extends over but is insulated from: (i) the channel region in each body region, (ii) a surface area of the second drift region between adjacent stripes of body regions, and (iii) a surface portion of each source region.

Abstract: The invention relates to a dispenser device which may convert water into silver ionized water and may dispense the silver ionized water to necessary part of human body which may be easily contaminated by germs like as the affected part so that the necessary part of human body may be sterilized and the human body may be kept healthy. According to an aspect of the invention, there is provided a dispenser device 1 comprising a container 30, a silver foam block 10 which is contained in the container 30, and a pumping unit 20 which is combined at the upper portion of the container 30.

Abstract: An electron emission material includes an electron emission material main body, a base metal layer disposed on the electron emission material main body, and a thermal electron emission layer disposed on the base metal layer.

Abstract: An electron emission source including a carbon-based material coated with metal carbide in the surface coating layer, of which the metal has a negative Gibbs free energy when forming the metal carbide at 1,500 K or lower, a method of preparing electron emission sources, and an electron emission device including the electron emission source. The electron emission source includes a carbon nanotube coated with metal carbide or a carbon nanotube having a metal carbide layer and a metal coating layer, which are sequentially formed thereon. Thus, the electron emission source has long lifespan without deterioration of electron emitting characteristics. The electron emission source can be used to manufacture electron emission devices with improved reliability.

Abstract: In accordance with one embodiment of the present invention, a power semiconductor device includes a first drift region of a first conductivity type extending over a semiconductor substrate. The first drift region has a lower impurity concentration than the semiconductor substrate. A second drift region of the first conductivity type extends over the first drift region, and has a higher impurity concentration than the first drift region. A plurality of stripe-shaped body regions of a second conductivity type are formed in an upper portion of the second drift region. A third region of the first conductivity type is formed in an upper portion of each body region so as to form a channel region in each body region between the third region and the second drift region. A gate electrode laterally extends over but is insulated from: (i) the channel region in each body region, (ii) a surface area of the second drift region between adjacent stripes of body regions, and (iii) a surface portion of each source region.

Abstract: In accordance with one embodiment of the present invention, a power semiconductor device includes a first drift region of a first conductivity type extending over a semiconductor substrate. The first drift region has a lower impurity concentration than the semiconductor substrate. A second drift region of the first conductivity type extends over the first drift region, and has a higher impurity concentration than the first drift region. A plurality of stripe-shaped body regions of a second conductivity type are formed in an upper portion of the second drift region. A third region of the first conductivity type is formed in an upper portion of each body region so as to form a channel region in each body region between the third region and the second drift region. A gate electrode laterally extends over but is insulated from: (i) the channel region in each body region, (ii) a surface area of the second drift region between adjacent stripes of body regions, and (iii) a surface portion of each source region.

Abstract: The present invention provides a cold cathode electron source and a method for manufacturing the cold cathode electron source. The cold cathode electron source includes a substrate on which are deposited a catalyst metal layer, an insulation layer, and a gate metal layer; a cavity section formed through the catalyst metal layer, the insulation layer, and the gate metal layer; and an emitter realized through a plurality of carbon nanotubes, which are grown from walls of the catalyst metal layer exposed in the cavity section and which have long axes parallel to the substrate.

Abstract: The present invention provides a cold cathode electron source and a method for manufacturing the cold cathode electron source. The cold cathode electron source includes a substrate on which are deposited a catalyst metal layer, an insulation layer, and a gate metal layer; a cavity section formed through the catalyst metal layer, the insulation layer, and the gate metal layer; and an emitter realized through a plurality of carbon nanotubes, which are grown from walls of the catalyst metal layer exposed in the cavity section and which have long axes parallel to the substrate.

Abstract: The invention is a piping coupler which can be easily and quickly disconnected even at the time of a high hydraulic pressure working.