Patents by Inventor Young Dae Kim

Young Dae Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device including ruthenium electrode and method for fabricating the same
    Patent number: 8120180
    Abstract: A semiconductor device includes a semiconductor substrate, an insulation pattern on the semiconductor substrate, and an etch stop layer on the insulating pattern, the insulation pattern and the etch stop layer defining a contact hole that exposes the substrate, a first plug filled in a portion of the contact hole, a diffusion barrier layer formed above the first plug and in a bottom portion and on sidewalls of a remaining portion of the contact hole, a second plug fainted on the diffusion barrier layer and filled in the contact hole, and a storage node coupled to and formed on the second plug.
    Type: Grant
    Filed: July 16, 2010
    Date of Patent: February 21, 2012
    Assignee: Hynix Semiconductor Inc.
    Inventors: Jin-Hyock Kim, Jae-Sung Roh, Seung-Jin Yeom, Kee-Jeung Lee, Han-Sang Song, Deok-Sin Kil, Young-Dae Kim
  • IMAGE PROCESSING BOARD AND DISPLAY APPARATUS HAVING THE SAME
    Publication number: 20120033391
    Abstract: An image processing board and a display apparatus having the same are provided. The image processing board includes a substrate, common input terminals installed on the substrate, and an additional input terminal selectively installed on the substrate. The additional input terminal is selectively installed on the substrate according to a type of display apparatus, and thus the image processing board may be used in various types of display apparatuses.
    Type: Application
    Filed: May 19, 2011
    Publication date: February 9, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jae Cheol HEO, Young Dae KIM, Do Yong KIM, Eun Young KIM
  • Plasma display apparatus and method of driving
    Patent number: 8072395
    Abstract: A plasma display apparatus includes a data driver and a plasma display panel having a first address electrode and a second address electrode. The data driver is configured to initiate a change in a voltage value of a first data signal supplied to the first address electrode at a first initiation time, and to initiate a change in a voltage value of a second data signal supplied to the second address electrode at a second, different initiation time. Each of the data signals gradually changes from a first data voltage to a second data voltage during a respective first period, maintains at the second data voltage during a respective second period, and gradually changes from the second data voltage to a third data voltage during a respective third period.
    Type: Grant
    Filed: May 15, 2007
    Date of Patent: December 6, 2011
    Assignee: LG Electronics Inc.
    Inventor: Young Dae Kim
  • Method for fabricating a capacitor utilizes the sacrificial pattern covering the cell region
    Patent number: 8048758
    Abstract: A method for fabricating a capacitor includes forming an isolation layer over a cell region and a peripheral region of a substrate. The isolation layer forms a plurality of open regions in the cell region. Storage nodes are formed on surfaces of the open regions. A sacrificial pattern is formed over the isolation layer and covers the cell region. The isolation layer is etched in the peripheral region to expose side portions of the resulting structure obtained after forming the sacrificial pattern in the cell region. With the sacrificial pattern supporting the storage nodes, the isolation layer in the cell region is removed. The sacrificial pattern is then removed.
    Type: Grant
    Filed: March 22, 2011
    Date of Patent: November 1, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Jae-Sung Roh, Kee-Jeung Lee, Han-Sang Song, Seung-Jin Yeom, Deok-Sin Kil, Young-Dae Kim, Jin-Hyock Kim
  • Method of forming polycrystalline silicon layer and atomic layer deposition apparatus used for the same
    Patent number: 8048783
    Abstract: A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.
    Type: Grant
    Filed: February 26, 2010
    Date of Patent: November 1, 2011
    Assignee: Samsung Mobile Display Co., Ltd.
    Inventors: Yun-Mo Chung, Ki-Yong Lee, Min-Jae Jeong, Jin-Wook Seo, Jong-Won Hong, Heung-Yeol Na, Eu-Gene Kang, Seok-Rak Chang, Tae-Hoon Yang, Ji-Su Ahn, Young-Dae Kim, Byoung-Keon Park, Kil-Won Lee, Dong-Hyun Lee, Sang-Yon Yoon, Jong-Ryuk Park, Bo-Kyung Choi, Maxim Lisachenko
  • Method for fabricating capacitor utilizes a sacrificial pattern enclosing the upper outer walls of the storage nodes
    Patent number: 8048757
    Abstract: A method for fabricating a capacitor includes forming an isolation layer over a cell region and a peripheral region of a substrate. The isolation layer forms a plurality of open regions in the cell region. Storage nodes are formed on surfaces of the open regions. An upper portion of the isolation layer is etched to expose upper outer walls of the storage nodes. A sacrificial pattern is formed over the isolation layer to enclose the upper outer walls of the storage nodes. The isolation layer in the peripheral region is etched to expose side portions of the resulting structure obtained after forming the sacrificial pattern in the cell region. With the sacrificial pattern supporting the storage nodes, the isolation layer in the cell region is removed. The sacrificial pattern is then removed.
    Type: Grant
    Filed: March 22, 2011
    Date of Patent: November 1, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Jae-Sung Roh, Kee-Jeung Lee, Han-Sang Song, Seung-Jin Yeom, Deok-Sin Kil, Young-Dae Kim, Jin-Hyock Kim
  • METHOD OF FORMING POLYCRYSTALLINE SILICON LAYER AND ATOMIC LAYER DEPOSITION APPARATUS USED FOR THE SAME
    Publication number: 20110263107
    Abstract: A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.
    Type: Application
    Filed: July 7, 2011
    Publication date: October 27, 2011
    Applicant: Samsung Mobile Display Co., Ltd.
    Inventors: Yun-Mo CHUNG, Ki-Yong LEE, Min-Jae JEONG, Jin-Wook SEO, Jong-Won HONG, Heung-Yeol NA, Eu-Gene KANG, Seok-Rak CHANG, Tae-Hoon YANG, Ji-Su AHN, Young-Dae KIM, Byoung-Keon PARK, Kil-Won LEE, Dong-Hyun LEE, Sang-Yon YOON, Jong-Ryuk PARK, Bo-Kyung CHOI, Maxim LISACHENKO
  • Method of fabricating capacitor in semiconductor device
    Patent number: 8035193
    Abstract: A capacitor includes a bottom electrode, a dielectric layer and a top electrode over a substrate. A RuXTiYOZ film is included in at least one of the bottom and top electrodes, where x, y and z are positive real numbers. A method of fabricating the capacitor through a sequential formation of a bottom electrode, a dielectric layer and a top electrode over a substrate includes forming a RuXTiYOZ film during a formation of at least one of the bottom electrode and top electrode, where x, y and z are positive real numbers.
    Type: Grant
    Filed: December 23, 2008
    Date of Patent: October 11, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Kwan-Woo Do, Kee-Jeung Lee, Deok-Sin Kil, Young-Dae Kim, Jin-Hyock Kim, Kyung-Woong Park, Jeong-Yeop Lee
  • ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF
    Publication number: 20110220898
    Abstract: An organic light emitting diode (OLED) display that includes a substrate, a thin film transistor, and a pixel electrode. The thin film transistor is formed on the substrate and includes a semiconductor layer, a gate electrode, a source electrode, and a drain electrode. The pixel electrode is electrically connected to the thin film transistor and is formed on the same layer as the source electrode and the drain electrode. The source electrode and the drain electrode include a first conductive layer, and the pixel electrode includes a first conductive layer and a second conductive layer stacked thereon.
    Type: Application
    Filed: February 28, 2011
    Publication date: September 15, 2011
    Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.
    Inventors: Ju-Won YOON, Il-Jeong LEE, Choong-Youl IM, Young-Dae KIM, Jong-Mo YEO, Do-Hyun KWON, Cheol-Ho YU
  • Method for fabricating capacitor
    Patent number: 8017491
    Abstract: A method for fabricating a capacitor includes forming a sacrificial layer having a plurality of trenches on an upper portion of a substrate, forming storage nodes in the trenches, exposing upper portions of the storage nodes by removing a portion of the sacrificial layer, forming supporters to support the exposed upper portions of the storage nodes, removing the sacrificial layer under the supporters, and removing the supporters.
    Type: Grant
    Filed: December 27, 2007
    Date of Patent: September 13, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Kee-Jeung Lee, Jae-Sung Roh, Seung-Jin Yeom, Han-Sang Song, Deok-Sin Kil, Young-Dae Kim, Jin-Hyock Kim, Kwan-Woo Do
  • HYDROGEN GENERATOR USING STEAM-REFORMING REACTION
    Publication number: 20110194998
    Abstract: Disclosed herein is a hydrogen generator for producing hydrogen by the steam-reforming reaction of hydrocarbons, in which a pressure loss induction structure for artificially reducing the pressure of exhaust gas is provided between a combustion unit and an exhaust gas discharge pipe, thus improving the uneven distribution of exhaust gas.
    Type: Application
    Filed: February 9, 2011
    Publication date: August 11, 2011
    Inventors: Young Dae KIM, Jae Suk Choi, Jin Sik Yang, Myung Jun Kim
  • METHOD FOR FABRICATING A CAPACITOR
    Publication number: 20110171808
    Abstract: A method for fabricating a capacitor includes forming an isolation layer over a cell region and a peripheral region of a substrate. The isolation layer forms a plurality of open regions in the cell region. Storage nodes are formed on surfaces of the open regions. A sacrificial pattern is formed over the isolation layer and covers the cell region. The isolation layer is etched in the peripheral region to expose side portions of the resulting structure obtained after forming the sacrificial pattern in the cell region. With the sacrificial pattern supporting the storage nodes, the isolation layer in the cell region is removed. The sacrificial pattern is then removed.
    Type: Application
    Filed: March 22, 2011
    Publication date: July 14, 2011
    Applicant: Hynix Semiconductor Inc.
    Inventors: Jae-Sung ROH, Kee-Jeung Lee, Han-Sang Song, Seung-Jin Yeom, Deok-Sin Kil, Young-Dae Kim, Jin-Hyock Kim
  • METHOD FOR FABRICATING CAPACITOR
    Publication number: 20110171807
    Abstract: A method for fabricating a capacitor includes forming an isolation layer over a cell region and a peripheral region of a substrate. The isolation layer forms a plurality of open regions in the cell region. Storage nodes are formed on surfaces of the open regions. An upper portion of the isolation layer is etched to expose upper outer walls of the storage nodes. A sacrificial pattern is formed over the isolation layer to enclose the upper outer walls of the storage nodes. The isolation layer in the peripheral region is etched to expose side portions of the resulting structure obtained after forming the sacrificial pattern in the cell region. With the sacrificial pattern supporting the storage nodes, the isolation layer in the cell region is removed. The sacrificial pattern is then removed.
    Type: Application
    Filed: March 22, 2011
    Publication date: July 14, 2011
    Applicant: Hynix Semiconductor Inc.
    Inventors: Jae-Sung Roh, Kee-Jeung Lee, Han-Sang Song, Seung-Jin Yeom, Deok-Sin Kil, Young-Dae Kim, Jin-Hyock Kim
  • CAPACITOR WITH PILLAR TYPE STORAGE NODE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20110169134
    Abstract: A capacitor includes a pillar-type storage node, a supporter disposed entirely within an inner empty crevice of the storage node, a conductive capping layer over the supporter and contacting the storage node so as to seal an entrance to the inner empty crevice, a dielectric layer over the storage node, and a plate node over the dielectric layer.
    Type: Application
    Filed: March 22, 2011
    Publication date: July 14, 2011
    Applicant: Hynix Semiconductor Inc.
    Inventors: Kee-Jeung Lee, Han-Sang Song, Deok-Sin Kil, Young-Dae Kim, Jin-Hyock Kim, Kwan-Woo Do, Kyung-Woong Park
  • Organic light emitting diode display and method of manufacturing the same
    Publication number: 20110163980
    Abstract: A method of manufacturing an organic light emitting diode display includes forming an organic layer on a support, forming a touch sensor on the organic layer, the touch sensor including a touch electrode pattern and a polarizing layer, separating the touch sensor from the support by removing the organic layer, and attaching the touch sensor to an organic light emitting diode display panel.
    Type: Application
    Filed: August 31, 2010
    Publication date: July 7, 2011
    Inventors: Do-Hyun Kwon, Il-Jeong Lee, Choong-Youl Im, Young-Dae Kim, Ju-Won Yoon, Jong-Mo Yeo, Cheol-Ho Yu
  • SEMICONDUCTOR DEVICE INCLUDING CARBON-CONTAINING ELECTRODE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20110128667
    Abstract: In a semiconductor device including a carbon-containing electrode and a method for fabricating the same, an electrode has a high work function due to a carbon-containing TiN layer contained therein. It is possible to provide a dielectric layer having a high permittivity and thus to reduce the leakage current by forming an electrode having a high work function. Also, sufficient capacitance of a capacitor can be secured by employing an electrode having a high work function and a dielectric layer having a high permittivity.
    Type: Application
    Filed: December 29, 2009
    Publication date: June 2, 2011
    Inventors: Kwan-Woo Do, Kee-Jeung Lee, Young-Dae Kim, Mi-Hyoung Lee, Jeong-Yeop Lee
  • DISPLAY DEVICE
    Publication number: 20110108845
    Abstract: In a display device, the display device includes a substrate, a red color filter layer, a green color filter layer, and a blue color filter layer. The substrate has red, green and blue sub-pixel regions. The red color filter layer is located on the red, green and blue sub-pixel regions, and has a first opening formed in the green sub-pixel region and a second opening formed in the blue sub-pixel region. The green color filter layer is located in the first opening. The blue color filter layer is located in the second opening. Since the red color filter layer is used as an interlayer insulating layer, there is no need to perform a separate process to form a color filter layer and a process for an interlayer insulating layer can be omitted. Thus, it can simplify a process.
    Type: Application
    Filed: February 25, 2010
    Publication date: May 12, 2011
    Applicant: Samsung Mobile Display Co., Ltd.
    Inventors: Do-Hyun KWON, Il-Jeong Lee, Choong-Youl Im, Young-Dae Kim, Jong-Mo Yeo, Ju-Won Yoon, Chool-Ho Yu
  • HYDROGEN GENERATING APPARATUS USING STEAM REFORMING REACTION
    Publication number: 20110097251
    Abstract: Disclosed herein is a hydrogen generating apparatus for producing hydrogen from a hydrocarbon feed through a steam reforming reaction, in which a pressure drop device is installed between a feed distributor and each of reactor tubes in order to prevent the feed from being unevenly distributed to the reactor tubes. In the hydrogen generating apparatus, the pressure drop device for artificially dropping the supply pressure of the feed is installed between the feed distributor and each of the reactor tubes which are concentrically arranged with respect to a heat source. Accordingly, if the feed is unevenly distributed, the pressure drop device can suppress an abnormal temperature rise in some of the reactor tubes to induce the smooth production of hydrogen and to greatly improve the operational safety of the hydrogen generating apparatus.
    Type: Application
    Filed: October 21, 2008
    Publication date: April 28, 2011
    Inventors: Jin Hwan Bang, Young Dae Kim, Myung Jun Kim
  • Organic light emitting diode display
    Publication number: 20110084279
    Abstract: An organic light emitting diode display that includes a first electrode arranged on a substrate, an organic emission layer arranged on the first electrode and a second electrode arranged on the organic emission layer, the first electrode includes a first layer, a second layer and a third layer stacked sequentially on the organic emission layer, the second layer has a lower work function than the third. Here, the second layer has a higher work function than that of the third layer.
    Type: Application
    Filed: June 21, 2010
    Publication date: April 14, 2011
    Applicant: Samsung Mobile Display Co., Ltd.
    Inventors: Do-Hyun Kwon, Choong-Youl Im, Dae-Hyun No, Ju-Won Yoon, Jong-Mo Yeo, Song-Yi Jeon, Il-Jeong Lee, Cheol-Ho Yu, Young-Dae Kim, Jin-Gyu Kang, Gyoo-Chul Jo
  • Capacitor with pillar type storage node and method for fabricating the same including conductive capping layer
    Patent number: 7910428
    Abstract: A capacitor includes a pillar-type storage node, a supporter filling an inner empty crevice of the storage node, a dielectric layer over the storage node, and a plate node over the dielectric layer.
    Type: Grant
    Filed: June 29, 2008
    Date of Patent: March 22, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Kee-Jeung Lee, Han-Sang Song, Deok-Sin Kil, Young-Dae Kim, Jin-Hyock Kim, Kwan-Woo Do, Kyung-Woong Park