Abstract: The present invention relates to an electric power saving apparatus wherein light energy is irradiated to a semiconductor device, with the light energy emitted when a voltage is supplied to a transmission line, such that the wavelengths of the electrons on the transmission line, along which a load-driving current flows are elongated, and the spin motions and vibration states of the electrons are stabilized, thereby reducing the collision of electrons in order to reduce the loss of energy, and wherein the light energy irradiated to the semiconductor device is continuously supplied thereto, by the use of an infrared ray emitting diode during operation, thereby maintaining the power saving effects with stability and continuity.

Abstract: The present invention relates to an electric power saving apparatus wherein light energy is irradiated to a semiconductor device, with the light energy emitted when a voltage is supplied to a transmission line, such that the wavelengths of the electrons on the transmission line, along which a load-driving current flows are elongated, and the spin motions and vibration states of the electrons are stabilized, thereby reducing the collision of electrons in order to reduce the loss of energy, and wherein the light energy irradiated to the semiconductor device is continuously supplied thereto, by the use of an infrared ray emitting diode during operation, thereby maintaining the power saving effects with stability and continuity.

Abstract: An insulated gate bipolar transistor having a high breakdown voltage in a reverse blocking mode and a method for fabricating the same are provided. The insulated gate bipolar transistor includes a relatively low-concentration lower buffer layer and a relatively high-concentration upper buffer layer. The low-concentration lower buffer layer contacts a semiconductor substrate having a high concentration of first conductivity type impurities used as a collector region, and the high-concentration upper buffer layer contacts a drift region of a second conductivity type. The conductivity type of the upper buffer layer is second conductivity type impurities, and the conductivity type of the lower buffer layer is substantially intrinsic, or first conductivity type impurities, or second conductivity type impurities. According to the present invention, due to the high-concentration upper buffer layer, the thickness of the drift region can be reduced, and during a forward continuity, a switching speed can be improved.

Abstract: An insulated gate bipolar transistor having a high breakdown voltage in a reverse blocking mode and a method for fabricating the same are provided. The insulated gate bipolar transistor includes a relatively low-concentration lower buffer layer and a relatively high-concentration upper buffer layer. The low-concentration lower buffer layer contacts a semiconductor substrate having a high concentration of first conductivity type impurities used as a collector region, and the high-concentration upper buffer layer contacts a drift region of a second conductivity type. The conductivity type of the upper buffer layer is second conductivity type impurities, and the conductivity type of the lower buffer layer is substantially intrinsic, or first conductivity type impurities, or second conductivity type impurities. According to the present invention, due to the high-concentration upper buffer layer, the thickness of the drift region can be reduced, and during a forward continuity, a switching speed can be improved.