Patents by Inventor Youngdon Chang

Youngdon Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sidewall spacer patterning method using gas cluster ion beam
    Patent number: 9500946
    Abstract: A method for patterning a substrate is described. The method includes receiving a substrate having a patterned layer, wherein the patterned layer defines a first mandrel pattern, and wherein a first material layer of a first composition is conformally deposited over the first mandrel pattern. The method further includes partially removing the first material layer using a first gas cluster ion beam (GCIB) etching process to expose a top surface of the first mandrel pattern, open a portion of the first material layer at a bottom region adjacent a feature of the first mandrel pattern, and retain a remaining portion of the first material layer on sidewalls of the first mandrel pattern; and selectively removing the first mandrel pattern using one or more etching processes to leave a second mandrel pattern comprising the remaining portion of the first material layer that remained on the sidewalls of the first mandrel pattern.
    Type: Grant
    Filed: March 18, 2015
    Date of Patent: November 22, 2016
    Assignee: TEL Epion Inc.
    Inventors: Soo Doo Chae, Youngdon Chang, Il-seok Song, Noel Russell
  • SIDEWALL SPACER PATTERNING METHOD USING GAS CLUSTER ION BEAM
    Publication number: 20160222521
    Abstract: A method for patterning a substrate is described. The method includes receiving a substrate having a patterned layer, wherein the patterned layer defines a first mandrel pattern, and wherein a first material layer of a first composition is conformally deposited over the first mandrel pattern. The method further includes partially removing the first material layer using a first gas cluster ion beam (GCIB) etching process to expose a top surface of the first mandrel pattern, open a portion of the first material layer at a bottom region adjacent a feature of the first mandrel pattern, and retain a remaining portion of the first material layer on sidewalls of the first mandrel pattern; and selectively removing the first mandrel pattern using one or more etching processes to leave a second mandrel pattern comprising the remaining portion of the first material layer that remained on the sidewalls of the first mandrel pattern.
    Type: Application
    Filed: March 18, 2015
    Publication date: August 4, 2016
    Inventors: Soo Doo Chae, Youngdon Chang, Il-seok Song, Noel Russell