Patents by Inventor Young-dong Lee
Young-dong Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240143927Abstract: Provided are a method for generating a summary and a system therefor. The method according to some embodiments may include calculating a likelihood loss for a summary model using a first text sample and a first summary sentence corresponding to the first text sample, calculating an unlikelihood loss for the summary model using a second text sample and the first summary sentence, the second text sample being a negative sample generated from the first text sample, and updating the summary model based on the likelihood loss and the unlikelihood loss.Type: ApplicationFiled: October 26, 2023Publication date: May 2, 2024Applicants: SAMSUNG SDS CO., LTD., SEOUL NATIONAL UNIVERSITY R&DB FOUNDATIONInventors: Sung Roh YOON, Bong Kyu HWANG, Ju Dong KIM, Jae Woong YUN, Hyun Jae LEE, Hyun Jin CHOI, Jong Yoon SONG, Noh II PARK, Seong Ho JOE, Young June GWON
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Patent number: 11957141Abstract: An apparatus and method for manufacturing a grilled seaweed includes the apparatus comprising a grilling unit having a first housing with a first inlet opening and a first outlet opening which communicate with each other; a first conveyor for transferring a sheet of seaweed from the first inlet opening to the first outlet opening; a first heating source installed over the first conveyor to discharge a flame onto a top surface of the seaweed being transferred by the first conveyor; and a second heating source installed on both sides of a lower portion of the first conveyor to apply a flame onto a bottom surface of the seaweed being transferred by the first conveyor.Type: GrantFiled: July 18, 2017Date of Patent: April 16, 2024Assignees: CJ CHEILJEDANG CORPORATION, CJ SEAFOOD CORPORATIONInventors: Joo Dong Park, Chang Yong Lee, Eun Soo Kwak, Dae Ik Kang, Tae Hyeong Kim, Young Sub Choi
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Publication number: 20240105427Abstract: Embodiments of the present disclosure include methods and apparatus for depositing a plurality of layers on a large area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to an RF power source and a ground and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators is disposed within the showerhead, wherein one plasma applicator of the plurality of plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Further, a DC bias power source is coupled to a substrate support assembly.Type: ApplicationFiled: December 4, 2023Publication date: March 28, 2024Inventors: Chien-Teh KAO, Tae Kyung WON, Carl A. SORENSEN, Sanjay D. YADAV, Young Dong LEE, Shinichi KURITA, Soo Young CHOI
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Publication number: 20240097238Abstract: A battery pack is advantageous for effective control and maintenance of thermal events. A battery pack according to one aspect of the present disclosure may include a battery module having one or more battery cells; a fire extinguishing tank holding a fire extinguishing liquid, disposed on top of the battery module and having a through hole formed therein; and a cover member installed in the through hole of the fire extinguishing tank and configured to open or close the through hole according to a change in internal pressure of the fire extinguishing tank.Type: ApplicationFiled: December 20, 2022Publication date: March 21, 2024Applicant: LG ENERGY SOLUTION, LTD.Inventors: Jong-Kyu AHN, Ki-Youn KIM, Hyeon-Kyu KIM, Jeong-O MUN, Gi-Dong PARK, Young-Won YUN, Seong-Ju LEE, Jae-Ki LEE
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Patent number: 11934950Abstract: An apparatus for embedding a sentence feature vector according to an embodiment includes a sentence acquisitor configured to acquire a first sentence and a second sentence, each including one or more words; a vector extractor configured to extract a first feature vector corresponding to the first sentence and a second feature vector corresponding to the second sentence by independently inputting each of the first sentence and the second sentence into a feature extraction network; and a vector compressor configured to compress the first feature vector and the second feature vector into a first compressed vector and a second compressed vector, respectively, by independently inputting each of the first feature vector and the second feature vector into a convolutional neural network (CNN)-based vector compression network.Type: GrantFiled: October 26, 2020Date of Patent: March 19, 2024Assignee: SAMSUNG SDS CO., LTD.Inventors: Seong Ho Joe, Young June Gwon, Seung Jai Min, Ju Dong Kim, Bong Kyu Hwang, Jae Woong Yun, Hyun Jae Lee, Hyun Jin Choi
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Publication number: 20240087847Abstract: The present disclosure is directed to an antenna array. The antenna array includes a plurality of dielectric windows coupled to a support structure comprising a plurality of gas ports, a primary frame comprising a primary conduit connected to a power source and a plurality of secondary frames supported by the primary frame. The secondary frame includes a secondary conduit connected to the primary conduit. A plurality of inductive couplers are disposed over the plurality of dielectric windows and supported by the secondary frames. The plurality of inductive couplers include a plurality of antenna connectors and a plurality of plurality of antennas. The plurality of antenna connectors connect the plurality of antennas to the secondary conduit.Type: ApplicationFiled: September 9, 2022Publication date: March 14, 2024Inventors: Zheng John YE, Jeevan Prakash SEQUEIRA, Chien-Teh KAO, Tae Kyung WON, Young Dong LEE, Soo Young CHOI, Suhail ANWAR, Jianhua ZHOU
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Publication number: 20240047291Abstract: Embodiments of the present disclosure generally relate to moisture barrier films utilized in an organic light emitting diode device. A moisture barrier film is deposited in a high density plasma chemical vapor deposition chamber at a temperature of less than about 250 degrees Celsius, an inductively coupled plasma power frequency of about 2 MHz to about 13.56 MHz or a microwave power frequency of about 2.45 GHz, and a plasma density of about 1011 cm3 to about 1012 cm3. The moisture barrier film comprises a material selected from the group consisting of silicon oxynitride, silicon nitride, and silicon oxide. The moisture barrier film has a thickness of less than about 3,000 Angstroms, a refractive index between about 1.45 and 1.95, and an absorption coefficient of about zero at UV wavelengths. The moisture barrier film may be utilized in a thin film encapsulation structure or a thin film transistor.Type: ApplicationFiled: September 10, 2019Publication date: February 8, 2024Inventors: Tae Kyung WON, Soo Young CHOI, Dong Kil YIM, Young Dong LEE, Zongkai WU, Sanjay D. YADAV
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Patent number: 11854771Abstract: Embodiments of the present disclosure include methods and apparatus for depositing a plurality of layers on a large area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to an RF power source and a ground and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators is disposed within the showerhead, wherein one plasma applicator of the plurality of plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Further, a DC bias power source is coupled to a substrate support assembly.Type: GrantFiled: May 24, 2021Date of Patent: December 26, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Chien-Teh Kao, Tae Kyung Won, Carl A. Sorensen, Sanjay D. Yadav, Young Dong Lee, Shinichi Kurita, Soo Young Choi
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Publication number: 20230265562Abstract: Exemplary methods of forming a silicon-oxygen-and-nitrogen-containing barrier layer are described. The methods include flowing deposition gases into a substrate processing region of a processing chamber, where the deposition gases include a silicon-containing gas and a nitrogen-containing gas. A deposition plasma is generated from the deposition gases in the substrate processing region. A silicon-oxygen-and-nitrogen-containing layer is deposited on a substrate from the deposition plasma, where the silicon-oxygen-and-nitrogen-containing layer is characterized by thickness of less than or about 2000 ?. The methods further include exposing a surface of the silicon-oxygen-and-nitrogen-containing layer to a treatment plasma to form a treated silicon-oxygen-and-nitrogen-containing layer, where the treatment plasma is formed from a nitrogen-containing gas and is silicon free.Type: ApplicationFiled: February 22, 2022Publication date: August 24, 2023Applicant: Applied Materials, Inc.Inventors: Fei Wu, Tae Kyung Won, Yu-Min Wang, Young Dong Lee
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Publication number: 20210280392Abstract: Embodiments of the present disclosure include methods and apparatus for depositing a plurality of layers on a large area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to an RF power source and a ground and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators is disposed within the showerhead, wherein one plasma applicator of the plurality of plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Further, a DC bias power source is coupled to a substrate support assembly.Type: ApplicationFiled: May 24, 2021Publication date: September 9, 2021Inventors: Chien-Teh KAO, Tae Kyung WON, Carl A. SORENSEN, Sanjay D. YADAV, Young Dong LEE, Shinichi KURITA, Soo Young CHOI
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Patent number: 11094508Abstract: Embodiments of the present disclosure include methods and apparatus for depositing a plurality of layers on a large area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to an RF power source and a ground and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators is disposed within the showerhead, wherein one plasma applicator of the plurality of plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Further, a DC bias power source is coupled to a substrate support assembly.Type: GrantFiled: December 14, 2018Date of Patent: August 17, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Chien-Teh Kao, Tae Kyung Won, Carl A. Sorensen, Sanjay D. Yadav, Young Dong Lee, Shinichi Kurita, Soo Young Choi
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Patent number: 10751765Abstract: The present disclosure relates to a chemical vapor deposition system for processing large area substrates. The chemical vapor deposition system includes a chemical vapor deposition chamber comprising a chamber body having a plurality of sidewalls, a lid assembly, and a bottom. A substrate support extends upward from the bottom within the chamber body. A gas distribution plate is located within the lid assembly. One or more cleaning gas injector ports coupled to corresponding one or more inlets in the plurality of sidewalls. Each of the one or more cleaning gas injector ports has a substantially oval-shaped or circular-shaped cleaning gas nozzle configured to provide reactive species from a remote plasma source to clean an underside of the gas distribution plate.Type: GrantFiled: August 13, 2018Date of Patent: August 25, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Tae Kyung Won, Young Dong Lee, Chien-Teh Kao, Soo Young Choi, Sanjay D. Yadav
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Publication number: 20200194233Abstract: Embodiments of the present disclosure include methods and apparatus for depositing a plurality of layers on a large area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to an RF power source and a ground and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators is disposed within the showerhead, wherein one plasma applicator of the plurality of plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Further, a DC bias power source is coupled to a substrate support assembly.Type: ApplicationFiled: December 14, 2018Publication date: June 18, 2020Inventors: Chien-Teh KAO, Tae Kyung WON, Carl A. SORENSEN, Sanjay D. YADAV, Young Dong LEE, Shinichi KURITA, Soo Young CHOI
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Publication number: 20200047222Abstract: The present disclosure relates to a chemical vapor deposition system for processing large area substrates. The chemical vapor deposition system includes a chemical vapor deposition chamber comprising a chamber body having a plurality of sidewalls, a lid assembly, and a bottom. A substrate support extends upward from the bottom within the chamber body. A gas distribution plate is located within the lid assembly. One or more cleaning gas injector ports coupled to corresponding one or more inlets in the plurality of sidewalls. Each of the one or more cleaning gas injector ports has a substantially oval-shaped or circular-shaped cleaning gas nozzle configured to provide reactive species from a remote plasma source to clean an underside of the gas distribution plate.Type: ApplicationFiled: August 13, 2018Publication date: February 13, 2020Inventors: Tae Kyung WON, Young Dong LEE, Chien-Teh KAO, Soo Young CHOI, Sanjay D. YADAV
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Patent number: 10312475Abstract: Embodiments of the present disclosure generally describe a method for depositing a barrier layer of SiN using a high density plasma chemical vapor deposition (HDP-CVD) process, and in particular, controlling a film stress of the deposited SiN layer by biasing the substrate during the deposition process.Type: GrantFiled: June 5, 2017Date of Patent: June 4, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Tae Kyung Won, Soo Young Choi, Sanjay D. Yadav, Carl A. Sorensen, Chien-Teh Kao, Suhail Anwar, Young Dong Lee
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Patent number: 10134567Abstract: In accordance with example embodiments, a plasma processing apparatus includes a chamber configured to peform a plasma process, an upper plate on the chamber, an antenna under the upper plate and the antenna is configured to generate plasma in the chamber, an upper insulator between the upper plate and the antenna and the upper insulator covers a top of the antenna, a lower insulator covering a bottom of the antenna, an antenna support ring configured to fix the antenna to the upper plate, and a metal gasket adhered to the antenna support ring.Type: GrantFiled: February 13, 2015Date of Patent: November 20, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Jin Hyuk Choi, Sang Chul Han, Jong Il Kee, Young dong Lee, Guen Suk Lee, Seung Hun Oh
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Publication number: 20180331328Abstract: Embodiments of the present disclosure generally describe a method for depositing a barrier layer of SiN using a high density plasma chemical vapor deposition (HDP-CVD) process, and in particular, controlling a film stress of the deposited SiN layer by biasing the substrate during the deposition process.Type: ApplicationFiled: June 5, 2017Publication date: November 15, 2018Inventors: Tae Kyung WON, Soo Young CHOI, Sanjay D. YADAV, Carl A. SORENSEN, Chien-Teh KAO, Suhail ANWAR, Young Dong LEE
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Patent number: 9312124Abstract: A method of fabricating a semiconductor device may include: forming a field region defining an active region in a substrate; forming a gate trench in which the active and field regions are partially exposed; forming a gate insulating layer on a surface of the active region; conformally forming a gate barrier layer including metal on the gate insulating layer and partially exposed field region; forming a gate electrode layer including metal on the gate barrier layer; and/or forming a gate capping layer. Forming the gate insulating layer may include forming a first gate oxide layer by primarily oxidizing the active region's surface, and forming a second gate oxide layer between the active region's surface and the first gate oxide layer by secondarily oxidizing the active region's surface. The gate capping layer may be in contact with the gate insulating layer, gate barrier layer, and/or gate electrode layer.Type: GrantFiled: September 6, 2012Date of Patent: April 12, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Tai-Su Park, Gun-Joong Lee, Young-Dong Lee, Sang-Chul Han, Joo-Byoung Yoon
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Publication number: 20150162167Abstract: In accordance with example embodiments, a plasma processing apparatus includes a chamber configured to peform a plasma process, an upper plate on the chamber, an antenna under the upper plate and the antenna is configured to generate plasma in the chamber, an upper insulator between the upper plate and the antenna and the upper insulator covers a top of the antenna, a lower insulator covering a bottom of the antenna, an antenna support ring configured to fix the antenna to the upper plate, and a metal gasket adhered to the antenna support ring.Type: ApplicationFiled: February 13, 2015Publication date: June 11, 2015Inventors: Jin Hyuk CHOI, Sang Chul HAN, Jong Il KEE, Young-Dong LEE, Guen Suk LEE, Seung Hun OH
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Patent number: 8980047Abstract: In accordance with example embodiments, a plasma processing apparatus includes a chamber configured to perform a plasma process, an upper plate on the chamber, an antenna under the upper plate and the antenna is configured to generate plasma in the chamber, an upper insulator between the upper plate and the antenna and the upper insulator covers a top of the antenna, a lower insulator covering a bottom of the antenna, an antenna support ring configured to fix the antenna to the upper plate, and a metal gasket adhered to the antenna support ring.Type: GrantFiled: July 1, 2011Date of Patent: March 17, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Jin Hyuk Choi, Sang Chul Han, Jong Il Kee, Young dong Lee, Guen Suk Lee, Seung Hun Oh