Patents by Inventor Young Doo JEONG

Young Doo JEONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160093710
    Abstract: A semiconductor device includes a junction region on both sides of a trench in a semiconductor substrate, a first gate electrode with a first workfunction buried in the trench, and a second gate electrode formed of a polycide layer having a second workfunction overlapping with the junction region at an upper part of the first gate electrode.
    Type: Application
    Filed: December 8, 2015
    Publication date: March 31, 2016
    Inventor: Young Doo JEONG
  • Patent number: 9236439
    Abstract: A semiconductor device includes a junction region on both sides of a trench in a semiconductor substrate, a first gate electrode with a first workfunction buried in the trench, and a second gate electrode formed of a polycide layer having a second workfunction overlapping with the junction region at an upper part of the first gate electrode.
    Type: Grant
    Filed: June 20, 2014
    Date of Patent: January 12, 2016
    Assignee: SK HYNIX INC.
    Inventor: Young Doo Jeong
  • Publication number: 20150187899
    Abstract: A semiconductor device includes a junction region on both sides of a trench in a semiconductor substrate, a first gate electrode with a first workfunction buried in the trench, and a second gate electrode formed of a polycide layer having a second workfunction overlapping with the junction region at an upper part of the first gate electrode.
    Type: Application
    Filed: June 20, 2014
    Publication date: July 2, 2015
    Inventor: Young Doo JEONG