Abstract: An organic light emitting diode (OLED) device is disclosed. In one embodiment, the OLED device includes: i) a substrate and ii) a first thin film formed on the substrate, wherein the first thin film comprises first and second surfaces opposing each other, wherein the first surface contacts the substrate, and wherein a plurality of protrusions and depressions are alternately formed on the second surface of the first thin film. The OLED device may further include a second thin film formed on the protrusions and depressions of the first thin film, a first electrode formed on the second thin film, a light emitting member formed on the first electrode and a second electrode formed on the organic light emitting member.

Abstract: An organic light emitting device including a first pixel, a second pixel, and a third pixel displaying different colors from each other according to the present invention is disclosed, wherein the organic light emitting device includes a substrate, a pixel electrode formed on the substrate, a reflecting electrode facing the pixel electrode, an emission layer disposed between the pixel electrode and the reflecting electrode, and a transflective member forming a micro-cavity along with the reflecting electrode, wherein a optical path length is a distance between the reflecting electrode and the transflective member, and the optical path lengths of at least two pixels among the first pixel, the second pixel, and the third pixel are the same, and the transflective member is removed in the white pixel.

Abstract: An organic light emitting diode (OLED) device is disclosed. In one embodiment, the OLED device includes: i) a substrate and ii) a first thin film formed on the substrate, wherein the first thin film comprises first and second surfaces opposing each other, wherein the first surface contacts the substrate, and wherein a plurality of protrusions and depressions are alternately formed on the second surface of the first thin film. The OLED device may further include a second thin film formed on the protrusions and depressions of the first thin film, a first electrode formed on the second thin film, a light emitting member formed on the first electrode and a second electrode formed on the organic light emitting member.

Abstract: An interferometer which incorporates a single mode VCSEL to facilitate miniaturization through integration of parts. The interferometer includes a beam splitter for partially reflecting and transmitting light; a single mode vertical-cavity surface-emitting laser for generating a beam of light perpendicular to a wafer; a first mirror fixedly perpendicular to the first path to reflect the portion of light reflected from the beam splitter; a second mirror movably arranged along the second path to reflect the beam portion transmitted through the beam splitter. A photodetector arranged along the second path detects the beam portion reflected from the first mirror and transmitted again through the beam splitter and the beam portion reflected from the second mirror and reflected again from the beam splitter to locate the second mirror based on an interference fringe created by a difference in the paths between the two beam portions.

Abstract: An OLED display and a manufacturing method of the OLED display are disclosed. The OLED display includes a first pixel, a second pixel, a third pixel, a substrate, an overcoating film formed on the substrate, and a translucent member formed on the overcoating film. The translucent member includes a multi-layered structure that includes a metal layer as the lowest layer, a first electrode is formed on the translucent member, an emission member is formed on the first electrode, and a second electrode is formed on the emission member.

Abstract: An organic light emitting device including a first pixel, a second pixel, and a third pixel displaying different colors from each other according to the present invention is disclosed, wherein the organic light emitting device includes a substrate, a pixel electrode formed on the substrate, a reflecting electrode facing the pixel electrode, an emission layer disposed between the pixel electrode and the reflecting electrode, and a transflective member forming a micro-cavity along with the reflecting electrode, wherein a optical path length is a distance between the reflecting electrode and the transflective member, and the optical path lengths of at least two pixels among the first pixel, the second pixel, and the third pixel are the same, and the transflective member is removed in the white pixel.

Abstract: An organic light emitting diode (OLED) display and a method of manufacturing the same are disclosed. The OLED display includes a first pixel, a second pixel, and a third pixel that display different colors. The display includes a first electrode, a second electrode that is opposite to the first electrode, and an emission layer which is disposed between the first electrode and the second electrode. A semi-transparent member is positioned on or under the first electrode and forms a microcavity together with the second electrode. An overcoating film is positioned under the semi-transparent member. At least one of the first pixel, the second pixel, and the third pixel has embossings formed in a surface of the semi-transparent member.

Abstract: An interferometer which incorporates a single mode VCSEL to facilitate miniaturization through integration of parts. The interferometer includes a beam splitter for partially reflecting and transmitting light; a single mode vertical-cavity surface-emitting laser for generating a beam of light perpendicular to a wafer; a first mirror fixedly perpendicular to the first path to reflect the portion of light reflected from the beam splitter; a second mirror movably arranged along the second path to reflect the beam portion transmitted through the beam splitter. A photodetector arranged along the second path detects the beam portion reflected from the first mirror and transmitted again through the beam splitter and the beam portion reflected from the second mirror and reflected again from the beam splitter to locate the second mirror based on an interference fringe created by a difference in the paths between the two beam portions.

Abstract: A laser device using an inorganic electro-luminescent material doped with a rare-earth element is provided. A dielectric layer such as SiO2 is arranged on a silicon substrate. A polycrystalline thin film of Er-doped ZnS or ZnSe is arranged on the dielectric layer. An electrode is formed on the dielectric layer. After a waveguide structure is substantially formed, a reflector is formed at both ends of the waveguide structure to form a laser resonator. An active medium is a polycrystalline material of Er-doped ZnS or ZnSe. When an AC voltage is applied between an electrode attached to the substrate and an electrode attached to an uppermost part, the effect of emitting light at 1550 nm and generating population inversion is used.

Abstract: Provided is a semiconductor optical device having a current-confined structure. The device includes a first semiconductor layer of a first conductivity type which is formed on a semiconductor substrate and includes one or more material layers, a second semiconductor layer which is formed on the first semiconductor layer and includes one or more material layers, and a third semiconductor layer of a second conductivity type which is formed on the second semiconductor layer and includes one or more material layers. One or more layers among the first semiconductor layer, the second semiconductor, and the third semiconductor layer have a mesa structure. A lateral portion of at least one of the material layers constituting the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer is recessed, and the recess is partially or wholly filled with an oxide layer, a nitride layer or a combination of them.

Abstract: An interferometer which incorporates a single mode VCSEL to facilitate miniaturization through integration of parts. The interferometer includes a beam splitter for partially reflecting and transmitting light; a single mode vertical-cavity surface-emitting laser for generating a beam of light perpendicular to a wafer; a first mirror fixedly perpendicular to the first path to reflect the portion of light reflected from the beam splitter; a second mirror movably arranged along the second path to reflect the beam portion transmitted through the beam splitter. A photodetector arranged along the second path detects the beam portion reflected from the first mirror and transmitted again through the beam splitter and the beam portion reflected from the second mirror and reflected again from the beam splitter to locate the second mirror based on an interference fringe created by a difference in the paths between the two beam portions.

Abstract: Provided is a semiconductor optical device having a current-confined structure. The device includes a first semiconductor layer of a first conductivity type which is formed on a semiconductor substrate and includes one or more material layers, a second semiconductor layer which is formed on the first semiconductor layer and includes one or more material layers, and a third semiconductor layer of a second conductivity type which is formed on the second semiconductor layer and includes one or more material layers. One or more layers among the first semiconductor layer, the second semiconductor, and the third semiconductor layer have a mesa structure. A lateral portion of at least one of the material layers constituting the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer is recessed, and the recess is partially or wholly filled with an oxide layer, a nitride layer or a combination of them.

Abstract: Provided is a method for fabricating a semiconductor optical device that can be used as a reflecting semiconductor mirror or an optical filter, in which two or more types of semiconductor layers having different etch rates are alternately stacked, at least one type of semiconductor layers is selectively etched to form an air-gap structure, and an oxide or a nitride having a good heat transfer property is deposited so that the air gap is buried, whereby it is possible to effectively implement the semiconductor reflector or the optical filter having a high reflectance in a small period because of the large index contrast between the oxide or the nitride buried in the air gap and the semiconductor layer.

Abstract: Provided is a semiconductor optical device having a current-confined structure. The device includes a first semiconductor layer of a first conductivity type which is formed on a semiconductor substrate and includes one or more material layers, a second semiconductor layer which is formed on the first semiconductor layer and includes one or more material layers, and a third semiconductor layer of a second conductivity type which is formed on the second semiconductor layer and includes one or more material layers. One or more layers among the first semiconductor layer, the second semiconductor, and the third semiconductor layer have a mesa structure. A lateral portion of at least one of the material layers constituting the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer is recessed, and the recess is partially or wholly filled with an oxide layer, a nitride layer or a combination of them.

Abstract: The present invention relates to a method of fabricating vertical-cavity surface emitting lasers being watched as a light source for long wavelength communication. The present invention includes forming a layer having a high resistance near the surface by implanting heavy ions such as silicon (Si), so that the minimum current injection diameter is made very smaller unlike implantation of a proton. Further, the present invention includes regrowing crystal so that current can flow the epi surface in parallel to significantly reduce the resistance up to the current injection part formed by silicon (Si) ions. Therefore, the present invention can not only effectively reduce the current injection diameter but also significantly reduce the resistance of a device to reduce generation of a heat. Further, the present invention can further improve dispersion of a heat using InP upon regrowth and thus improve the entire performance of the device.

Abstract: Disclosed is a surface-emitting laser device which eliminates an absorption loss of a p-type doped layer and reduces a scattering loss in a mirror layer and a carrier loss due to a current induction, comprising a first conductive type of semiconductor substrate; a bottom mirror layer formed on the semiconductor substrate and composed of a first conductive type of semiconductor layer; an active layer formed on the bottom mirror layer; an electron leakage barrier layer formed on the active layer and having an energy gap larger than the active layer; a current induction layer formed on the electron leakage barrier layer and a second conductive type of semiconductor layer; a current extension layer formed on the current induction layer and composed of the second conductive type of semiconductor layer; and a top mirror layer formed on the current extension layer, wherein the top mirror layer includes undoped center portion and its both end having the second conductive type of dopant diffusion region.

Abstract: The present invention relates to a method of fabricating vertical-cavity surface emitting lasers being watched as a light source for long wavelength communication. The present invention includes forming a layer having a high resistance near the surface by implanting heavy ions such as silicon (Si), so that the minimum current injection diameter is made very smaller unlike implantation of a proton. Further, the present invention includes regrowing crystal so that current can flow the epi surface in parallel to significantly reduce the resistance up to the current injection part formed by silicon (Si) ions. Therefore, the present invention can not only effectively reduce the current injection diameter but also significantly reduce the resistance of a device to reduce generation of a heat. Further, the present invention can further improve dispersion of a heat using InP upon regrowth and thus improve the entire performance of the device.

Abstract: A folded cavity laser for generating a laser beam, includes a substrate provided with a distributed Bragg reflector (DBR); an active medium formed above the DBR for amplifying the laser beam; a first and a second mirrors formed on sides of the active medium, respectively, for making a horizontal cavity and for reflecting the amplified laser beam to the DBR; and a microlens, formed on the substrate opposite the DBR, for making the amplified laser beam astigmatic after passing therethrough.

Abstract: A long-wavelength VCSEL is provided.

Abstract: A folded cavity laser for generating a laser beam, includes a substrate provided with a distributed Bragg reflector (DBR); an active medium formed above the DBR for amplifying the laser beam; a first and a second mirrors formed on sides of the active medium, respectively, for making a horizontal cavity and for reflecting the amplified laser beam to the DBR; and a microlens, formed on the substrate opposite the DBR, for making the amplified laser beam astigmatic after passing therethrough.