Abstract: A display device is disclosed. In one aspect, the display device includes a substrate, a barrier layer formed over the substrate, and an emission layer formed over the barrier layer. The display device also includes a stress-absorbing layer contacting one of the substrate, the barrier layer, and the emission layer. The stress-absorbing layer has a structural density configured to partially vary based on an applied voltage.

Abstract: In an aspect, a flexible substrate may include a base substrate, an insulating layer positioned on a first surface of the base substrate, a protective film positioned on a second surface facing the first surface of the base substrate and an adhesive layer positioned between the base substrate and the protective film and attaching the protective film on the second surface of the base substrate. The adhesive layer may include a cross-linker.

Abstract: A display device is disclosed. In one aspect, the display device includes a flexible substrate capable of being bent in a first direction and an insulating layer including a first opening pattern positioned on the flexible substrate and extending in a second direction crossing the first direction.

Abstract: A mask comprises a mask frame defining an opening; a plurality of support bars installed in the opening of the mask frame; a plurality of movable bars, each of which is installed over a corresponding one of the plurality of support bars and movable relative to the corresponding support bar, wherein the plurality of support bars and the plurality of movable bars are arranged to divide the opening into a plurality of mask holes; and a plurality of actuators installed between the plurality of movable bars and the corresponding support bars and configured to move the movable bars relative to the plurality of support bars.

Abstract: A display device includes: a flexible substrate including a bending area bent in one direction; an insulating layer on the flexible substrate and comprising a plurality of opening patterns spaced apart from each other at the bending area; and a wavy line extending through the plurality of opening patterns.

Abstract: Provided are a thin-film transistor (TFT), a method of manufacturing the same, and a method of manufacturing a backplane for a flat panel display (FPD). The method of manufacturing the TFT according to an embodiment of the present invention includes forming a gate electrode on a substrate; forming an insulating layer on the substrate to cover the gate electrode; performing a plasma treatment on an upper surface of the insulating layer using a halogen gas; forming an oxide semiconductor layer on the insulating layer and positioned to correspond to the gate electrode; and forming source and drain electrodes on the insulating layer to contact and over portions of the oxide semiconductor layer.

Abstract: Provided are a thin-film transistor (TFT), a method of manufacturing the same, and a method of manufacturing a backplane for a flat panel display (FPD). The method of manufacturing the TFT according to an embodiment of the present invention includes forming a gate electrode on a substrate; forming an insulating layer on the substrate to cover the gate electrode; performing a plasma treatment on an upper surface of the insulating layer using a halogen gas; forming an oxide semiconductor layer on the insulating layer and positioned to correspond to the gate electrode; and forming source and drain electrodes on the insulating layer to contact and over portions of the oxide semiconductor layer.

Abstract: A display device includes a first display, an accommodation unit on a side of the first display, and a second display. The second display is rollably accommodated in the accommodation unit in a rolled state.

Abstract: An organic light emitting display device includes: a curved organic light emitting display panel. The organic light emitting display panel includes a flexible substrate, a thin film transistor layer including a semiconductor layer, and an organic light emission layer including an organic light emitting material. In the curved organic light emitting display panel, the thin film transistor layer receives a compressive stress, or a neutral plane in which the compressive stress and a tensile stress maintain equilibrium is defined in the thin film transistor layer.

Abstract: An organic light emitting diode (OLED) display, including a flexible substrate bent in a first direction, an OLED arranged on the flexible substrate, a first thin film transistor connected to the OLED and including a first channel area extending in a second direction crossing the first direction, and one or more additional thin film transistors connected to the first thin film transistor and including corresponding additional channel areas extending in the second direction.

Abstract: A method of manufacturing an organic light emitting display includes: patterning an amorphous silicon layer to form an amorphous silicon layer pattern; forming an insulating layer on the amorphous silicon layer pattern; forming a gate electrode on a part of the insulating layer which corresponds to the amorphous silicon layer pattern; forming a blocking film on the gate electrode and the insulating layer; doping an impurity in a part of the amorphous silicon layer pattern; annealing the amorphous silicon layer pattern on which the impurity is doped to form a semiconductor layer; removing the blocking film; etching the insulating layer using the gate electrode as a mask to form a gate insulating layer below the gate electrode; forming an interlayer insulating layer using an organic insulator on a buffer layer, the gate electrode, and the semiconductor layer.

Abstract: A display device is disclosed. In one aspect, the display device includes a flexible substrate capable of being bent in a first direction and an insulating layer including a first opening pattern positioned on the flexible substrate and extending in a second direction crossing the first direction.

Abstract: Provided are a thin-film transistor (TFT), a method of manufacturing the same, and a method of manufacturing a backplane for a flat panel display (FPD). The method of manufacturing the TFT according to an embodiment of the present invention includes forming a gate electrode on a substrate; forming an insulating layer on the substrate to cover the gate electrode; performing a plasma treatment on an upper surface of the insulating layer using a halogen gas; forming an oxide semiconductor layer on the insulating layer and positioned to correspond to the gate electrode; and forming source and drain electrodes on the insulating layer to contact and over portions of the oxide semiconductor layer.

Abstract: A substrate evaluation apparatus and method which includes a substrate storage portion accommodating a substrate, first and second fastening portions are arranged in the substrate storage portion and are each fastened to a side of the substrate, a driving portion driving the first and second fastening portions, and a measurement portion measuring electrical characteristics of the substrate through application of an electrical signal to the substrate.

Abstract: Provided are a bending apparatus and a bending method. According to an aspect of the present invention, there is provided a bending apparatus including a guide portion configured to guide a movement and a bending of a flexible substrate so that the flexible substrate is bent and moved, a first fastening portion configured to fix one side of the flexible substrate that is bent along the guide portion, a second fastening portion configured to fix an other side of the flexible substrate, and a driving portion configured to move at least one of the first fastening portion and the second fastening portion.

Abstract: An anti-scratch film, including a film base and an anti-scratch layer on one side of the film base. The anti-scratch layer includes a plurality of protrusions.

Abstract: Provided are an organic thin film transistor (OTFT) and a fabrication method thereof, an organic semiconductor device having the OTFT, and a flexible display device having the OTFT. The OTFT includes a substrate, a gate electrode, an insulating layer, an active layer, and a source/drain electrode. The gate electrode may be made of a nanocrystalline carbon layer.

Abstract: Provided are an organic thin film transistor (OTFT) and a fabrication method thereof, an organic semiconductor device having the OTFT, and a flexible display device having the OTFT. The OTFT includes a substrate, a gate electrode, an insulating layer, an active layer, and a source/drain electrode. The gate electrode may be made of a nanocrystalline carbon layer.