Abstract: This invention is related to a radiation imager (e.g. x-ray imager) and method of making same. An insulating material having a low dielectric constant is provided in areas of overlap between collector electrodes and underlying TFTs, diodes, and/or address lines in order to improve the signal-to-noise ratio of the imager. The TFT array and corresponding imager are made in certain embodiments by coating the address lines and TFTs with a photo-imageable insulating layer which acts as a negative resist, exposing portions of the insulating layer with UV light, removing non-exposed areas of the insulating layer so as to form contact vias, and depositing storage capacitor collecting electrodes over the insulating layer so that the collecting electrodes contact TFT source electrodes through the contact vias. The resulting imager has an improved signal-to-noise ratio due to the low dielectric constant of the insulating layer.

Abstract: This invention is related to a radiation image (e.g. X-ray imager) including a thin film transistor (TFT) array, and method of making same. A photo-imageable interface barrier layer is provided between an array of collector electrodes and a photoconductor layer so as to simplify the process for manufacturing the imager and to improve image uniformity. In certain embodiments, the barrier layer is a negative resist. In certain embodiments, the barrier layer and an insulating layer over the TFTs may be of the same photo-imageable material.