Abstract: A micro-droplet fluidic cell includes a membrane structure having a nanopore, a hydrophobic material disposed onto a portion of the membrane structure, and an analyte solution traversing the membrane structure and forming a micro-droplet on a first surface of the membrane structure. Also disclosed are methods for fast ionic current detection using the micro-droplet fluidic cell.

Abstract: An apparatus with a programmable response includes a semiconductor device with a junction formed thereon, the junction having a built-in potential, a quantum well element proximate to the junction that provides an energy well within a depletion region of the junction. The energy well comprises one or more donor energy states that support electron trapping, and/or one or more acceptor energy states that support hole trapping; thereby modulating the built-in potential of the junction. The semiconductor device may be a diode, a bipolar diode, a transistor, or the like. A corresponding method is also disclosed herein.

Abstract: An apparatus with a programmable response includes a semiconductor device with a junction formed thereon, the junction having a built-in potential, a quantum well element proximate to the junction that provides an energy well within a depletion region of the junction. The energy well comprises one or more donor energy states that support electron trapping, and/or one or more acceptor energy states that support hole trapping; thereby modulating the built-in potential of the junction. The semiconductor device may be a diode, a bipolar diode, a transistor, or the like. A corresponding method is also disclosed herein.

Abstract: An apparatus with a programmable response includes a semiconductor device with a junction formed thereon, the junction having a built-in potential, a quantum well element proximate to the junction that provides an energy well within a depletion region of the junction. The energy well comprises one or more donor energy states that support electron trapping, and/or one or more acceptor energy states that support hole trapping; thereby modulating the built-in potential of the junction. The semiconductor device may be a diode, a bipolar diode, a transistor, or the like. A corresponding method is also disclosed herein.

Abstract: An apparatus with a programmable response includes a semiconductor device with a junction formed thereon, the junction having a built-in potential, a quantum well element proximate to the junction that provides an energy well within a depletion region of the junction. The energy well comprises one or more donor energy states that support electron trapping, and/or one or more acceptor energy states that support hole trapping; thereby modulating the built-in potential of the junction. The semiconductor device may be a diode, a bipolar diode, a transistor, or the like. A corresponding method is also disclosed herein.

Abstract: An apparatus with a programmable response includes a semi-conductor device with a junction formed thereon, the junction having a built-in potential, a quantum well element proximate to the junction that provides an energy well within a depletion region of the junction. The energy well comprises one or more donor energy states that support electron trapping, and/or one or more acceptor energy states that support hole trapping; thereby modulating the built-in potential of the junction. The semi-conductor device may be a diode, a bipolar diode, a transistor, or the like. A corresponding method is also disclosed herein.

Abstract: A micro-droplet fluidic cell includes a membrane structure having a nanopore, a hydrophobic material disposed onto a portion of the membrane structure, and an analyte solution traversing the membrane structure and forming a micro-droplet on a first surface of the membrane structure. Also disclosed are methods for fast ionic current detection using the micro-droplet fluidic cell.

Abstract: Electromechanical relays and semiconductor structures and microelectromechanical systems including at least part of an electromechanical relay are presented. For example, an electromechanical relay includes an electrically conductive terminal within a printed circuit board, one or more electrically conductive contacts, and one or more magnetic actuators. The one or more magnetic actuators are respectively associated with the one or more electrically conductive contacts and each magnetic actuator includes (i) a magnetic core within at least one via extending through one or more layers of the printed circuit board, and (ii) an electrical coil around at least a portion of the magnetic core and within one or more layers of the printed circuit board. Activation of the one or more actuators causes electrical contact between the terminal and an associated one of the one or more electrically conductive contacts.

Abstract: Methods and systems for high-bandwidth time domain reflectometry include a printed circuit board (PCB) and a probe. The PCB includes at least one signal terminal connected to at least one signal via at least three guide terminals arranged around the at least one high-frequency signal terminal. At least one of the guide terminals is connected to at least one ground via. The probe includes at least one biased pin to contact the at least one signal terminal and at least three fixed guide pins arranged about the at least one biased pin to facilitate alignment of said at least one biased pin by first engaging at least one guide terminal area, such that the at least one mechanically biased pin is guided to the at least one contact point.

Abstract: A semiconductor device (and method for forming the device) includes a silicon-on-insulator (SOI) wafer formed on a substrate surface. An isolation trench in the wafer surface surrounds alternating p-type trenches and n-type trenches and electrically isolates the device from the substrate, thereby allowing the device to be effectively utilized as a differential detector in an optoelectronic circuit.

Abstract: The present invention relates to an interconnected array of photodetector cells in which each cell of the photodetector array contains a photodetector for detecting light pulses and a photodetector for switching on the photodetector cell. Each cell has a first and second busbar between which the photodetectors pass current in response to light impinging on the cell. The cells of the array are connected in parallel by the first and second busbars. The photodetectors are formed by depositing electrodes connected to the first and second busbars onto GaAs. The photodetector for detecting light pulses has a significantly faster response to impinging light than the photodetector for switching on the photodetector cell. The faster response of one photodetector with respect to another photodetector can be accomplished by reducing the spacing on GaAs between electrodes forming the faster photodetector, or by adding an integrating capacitor to one photodetector.