Patents by Inventor Young Hee Byun

Young Hee Byun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solid state imager including TFTs with variably doped contact layer system for reducing TFT leakage current and increasing mobility
    Patent number: 6211533
    Abstract: A TFT structure includes a variably doped contact layer system in order to reduce leakage current characteristics and increase mobility of the TFT. Such TFTs may be utilized in, for example, X-ray imagers or liquid crystal displays. In certain embodiments, the contact layer system is lightly doped adjacent a semiconductor or channel layer, and is more heavily doped adjacent the source/drain electrodes. The variation in doping density of the contact layer system may be performed in a step-like manner, gradually, continuously, or in any other suitable manner. In certain embodiments, the contact layer system may include a single layer which is deposited over an intrinsic semiconductor layer, with the amount of dopant gas being used during the deposition process being adjusted through the deposition of the single layer so as to cause the doping density to vary (increase or decrease) throughout the thickness of the system/layer.
    Type: Grant
    Filed: January 13, 1999
    Date of Patent: April 3, 2001
    Assignee: OIS Optical Imaging Systems, Inc.
    Inventors: Young Hee Byun, Yiwei Lu
  • Solid state imager including TFTS with variably doped contact layer system for reducing TFT leakage current and increasing mobility and method of making same
    Patent number: 5917199
    Abstract: A TFT structure includes a variably doped contact layer system in order to reduce leakage current characteristics and increase mobility of the TFT. Such TFTs may be utilized in, for example, X-ray imagers or liquid crystal displays. In certain embodiments, the contact layer system is lightly doped adjacent a semiconductor or channel layer, and is more heavily doped adjacent the source/drain electrodes. The variation in doping density of the contact layer system may be performed in a step-like manner, gradually, continuously, or in any other suitable manner. In certain embodiments, the contact layer system may include a single layer which is deposited over an intrinsic semiconductor layer, with the amount of dopant gas being used during the deposition process being adjusted through the deposition of the single layer so as to cause the doping density to vary (increase or decrease) throughout the thickness of the system/layer.
    Type: Grant
    Filed: May 15, 1998
    Date of Patent: June 29, 1999
    Assignee: OIS Optical Imaging Systems, Inc.
    Inventors: Young Hee Byun, Yiwei Lu