Abstract: The present invention provide a vertical nano-sized transistor using carbon nanotubes capable of achieving high-density integration, that is, tera-bit scale integration, and a manufacturing method thereof, wherein in the vertical nano-sized transistor using carbon nanotubes, holes having diameters of several nanometers are formed in an insulating layer and are spaced at intervals of several nanometers. Carbon nanotubes are vertically aligned in the nano-sized holes by chemical vapor deposition, electrophoresis or mechanical compression to be used as channels. A gate is formed in the vicinity of the carbon nanotubes using an ordinary semiconductor manufacturing method, and then a source and a drain are formed at lower and upper parts of each of the carbon nanotubes thereby fabricating the vertical nano-sized transistor having an electrically switching characteristic.

Abstract: The present invention relates to a novel compound of formula (I) and its pharmaceutically acceptable acid addition salt, and process for the preparation thereof, which have strong antitumor activities and very low toxicity: wherein R1 and R2 are independently hydrogen, C1-C4 alkyl, C1-C4 alkylcarboxyl, C1-C4 alkylcarbonyl, C1-C4 alkoxy, C1-C4 hydroxyalkyl, C1-C4 aminoalkyl or C1-C4 hydroxyiminoalkyl, or R1 and R2 are fused to form C3-C4 unsaturated ring; R3, R4, R5, R6 and R7 are independently hydrogen, halogen, hydroxy, nitro, amino, C1-C4 alkyl, C1-C4 alkylcarboxyl, C1-C4 alkylcarbonyl, C1-C4 alkoxy, C1-C4 thioalkoxy; R8 is C1-C4 alkyl; Y is oxygen, sulphur, amino, subsitituted amino or C1-C4 thioalkyl; Z is C1-C4 alkoxy, C1-C4 alkyl, C1-C4 alkylamino or C1-C4 thioalkoxy; X1 and X2 are independently CH or nitrogen; and —N═C— and —C═Y— may form a single bond or a double bond provided that if —N═C— forms a single bond, —C═Y&md

Abstract: A method of vertically aligning pure carbon nanotubes on a large glass or silicon substrate at a low temperature using a low pressure DC thermal chemical vapor deposition method is provided. In this method, catalytic decomposition with respect to hydro-carbon gases is performed in two steps. Basically, an existing thermal chemical vapor deposition method using hydro-carbon gases such as acetylene, ethylene, methane or propane is used. To be more specific, the hydro-carbon gases are primarily decomposed at a low temperature of 400-500° C. by passing the hydro-carbon gases through a mesh-structure catalyst which is made of Ni, Fe, Co, Y, Pd, Pt, Au or an alloy of two or more of these materials.

Abstract: The apparatus for uniformly dispersing the microwave comprises a body including a plurality of reflective portions which are made of materials capable of reflecting the microwave and have the horizontal top surfaces and vertical side surfaces. The width of the plurality of reflective portions is set as 1/n times as large as a wavelength &lgr;g of the microwave. The depth of each of the plurality of reflective portions may be set as a value obtained by multiplying the remainder, which is obtained by dividing the power of a natural number for the least primitive root of a prime number by the prime number, by the width of the reflective portion under a condition that a datum plane is defined by a height from the bottom surface corresponding to a value obtained by multiplying the width of the reflective portion by (prime number−1).

Abstract: The present invention provide a vertical nano-sized transistor using carbon nanotubes capable of achieving high-density integration, that is, tera-bit scale integration, and a manufacturing method thereof, wherein in the vertical nano-sized transistor using carbon nanotubes, holes having diameters of several nanometers are formed in an insulating layer and are spaced at intervals of several nanometers. Carbon nanotubes are vertically aligned in the nano-sized holes by chemical vapor deposition, electrophoresis or mechanical compression to be used as channels. A gate is formed in the vicinity of the carbon nanotubes using an ordinary semiconductor manufacturing method, and then a source and a drain are formed at lower and upper parts of each of the carbon nanotubes thereby fabricating the vertical nano-sized transistor having an electrically switching characteristic.

Abstract: The present invention provide a vertical nano-sized transistor using carbon nanotubes capable of achieving high-density integration, that is, tera-bit scale integration, and a manufacturing method thereof, wherein in the vertical nano-sized transistor using carbon nanotubes, holes having diameters of several nanometers are formed in an insulating layer and are spaced at intervals of several nanometers. Carbon nanotubes are vertically aligned in the nano-sized holes by chemical vapor deposition, electrophoresis or mechanical compression to be used as channels. A gate is formed in the vicinity of the carbon nanotubes using an ordinary semiconductor manufacturing method, and then a source and a drain are formed at lower and upper parts of each of the carbon nanotubes thereby fabricating the vertical nano-sized transistor having an electrically switching characteristic.

Abstract: The present invention provide a vertical nano-sized transistor using carbon nanotubes capable of achieving high-density integration, that is, tera-bit scale integration, and a manufacturing method thereof, wherein in the vertical nano-sized transistor using carbon nanotubes, holes having diameters of several nanometers are formed in an insulating layer and are spaced at intervals of several nanometers. Carbon nanotubes are vertically aligned in the nano-sized holes by chemical vapor deposition, electrophoresis or mechanical compression to be used as channels. A gate is formed in the vicinity of the carbon nanotubes using an ordinary semiconductor manufacturing method, and then a source and a drain are formed at lower and upper parts of each of the carbon nanotubes thereby fabricating the vertical nano-sized transistor having an electrically switching characteristic.

Abstract: Semiconductor carbon nanotubes functionalized by hydrogen and a method for fabricating the same, wherein the functional hydrogenated semiconductor carbon nanotubes have chemical bonds between carbon and hydrogen atoms. The semiconductor carbon nanotube fabricating method includes heating carbon nanotubes in a vacuum, dissociating hydrogen molecules in hydrogen gas into hydrogen atoms, and exposing the carbon nanotubes to the hydrogen gas to form chemical bonds between carbon atoms of the carbon nanotubes and the hydrogen atoms. The conversion of metallic carbon nanotubes into semiconductor nanotubes and of semiconductor nanotubes having a relatively narrow energy bandgap into semiconductor nanotubes having a relative wide energy bandgap can be achieved using the method. The functional hydrogenated semiconductor carbon nanotubes may be applied and used in, for example, electronic devices, optoelectronic devices, and energy storage.

Abstract: The apparatus for uniformly dispersing the microwave comprises a body including a plurality of reflective portions which are made of materials capable of reflecting the microwave and have the horizontal top surfaces and vertical side surfaces. The width of the plurality of reflective portions is set as 1/n times as large as a wavelength &lgr;g of the microwave. The depth of each of the plurality of reflective portions may be set as a value obtained by multiplying the remainder, which is obtained by dividing the power of a natural number for the least primitive root of a prime number by the prime number, by the width of the reflective portion under a condition that a datum plane is defined by a height from the bottom surface corresponding to a value obtained by multiplying the width of the reflective portion by (prime number −1).

Abstract: The present invention provide a vertical nano-sized transistor using carbon nanotubes capable of achieving high-density integration, that is, tera-bit scale integration, and a manufacturing method thereof, wherein in the vertical nano-sized transistor using carbon nanotubes, holes having diameters of several nanometers are formed in an insulating layer and are spaced at intervals of several nanometers. Carbon nanotubes are vertically aligned in the nano-sized holes by chemical vapor deposition, electrophoresis or mechanical compression to be used as channels. A gate is formed in the vicinity of the carbon nanotubes using an ordinary semiconductor manufacturing method, and then a source and a drain are formed at lower and upper parts of each of the carbon nanotubes thereby fabricating the vertical nano-sized transistor having an electrically switching characteristic.

Abstract: The present invention relates to a novel compound of the general formula (I) and its pharmaceutically acceptable acid addition salt, and process for the preparation thereof, which have strong antimumor activities and very low toxicity.

Abstract: A supercapacitor using an electrode formed of a new material is provided. The supercapacitor includes two electrodes facing each other, the electrodes being composed of carbon nanotubes, an electrolyte provided between the two electrodes, and a separator for separating the electrolyte between the two electrodes.

Abstract: A supercapacitor using an electrode formed of a new material is provided. The supercapacitor includes two electrodes facing each other, the electrodes being composed of carbon nanotubes, an electrolyte provided between the two electrodes, and a separator for separating the electrolyte between the two electrodes.

Abstract: The present invention provide a vertical nano-sized transistor using carbon nanotubes capable of achieving high-density integration, that is, tera-bit scale integration, and a manufacturing method thereof, wherein in the vertical nano-sized transistor using carbon nanotubes, holes having diameters of several nanometers are formed in an insulating layer and are spaced at intervals of several nanometers. Carbon nanotubes are vertically aligned in the nano-sized holes by chemical vapor deposition, electrophoresis or mechanical compression to be used as channels. A gate is formed in the vicinity of the carbon nanotubes using an ordinary semiconductor manufacturing method, and then a source and a drain are formed at lower and upper parts of each of the carbon nanotubes thereby fabricating the vertical nano-sized transistor having an electrically switching characteristic.

Abstract: A method of vertically aligning pure carbon nanotubes on a large glass or silicon substrate at a low temperature using a low pressure DC thermal chemical vapor deposition method is provided. In this method, catalytic decomposition with respect to hydro-carbon gases is performed in two steps. Basically, an existing thermal chemical vapor deposition method using hydro-carbon gases such as acetylene, ethylene, methane or propane is used. To be more specific, the hydro-carbon gases are primarily decomposed at a low temperature of 400-500° C. by passing the hydro-carbon gases through a mesh-structure catalyst which is made of Ni, Fe. Co, Y, Pd. Pt, Au or an alloy of two or more of these materials. Secondly, the catalytically—and thermally-decomposed hydro-carbon gases pass through the space between a carbon nanotube growing substrate and an electrode substrate made of Ni, Fe, Co, Y, Pd.

Abstract: The present invention relates to novel compound having strong antimumor activities of the general formula(I) ##STR1## wherein R.sub.1 and R.sub.2 are independently hydrogen, substituted or unsubstituted C.sub.1 -C.sub.8 alkyl, substituted or unsubstituted C.sub.3 -C.sub.6 cycloalkyl, substituted or unsubstituted C.sub.2 -C.sub.8 unsaturated alkyl, ketone, substituted or unsubstituted aryl, substituted or unsubstituted C.sub.1 -C.sub.4 alkoxy, substituted or unsubstituted arylhydroxy, substituted or unsubstituted amino, C.sub.1 -C.sub.4 lower ester, C.sub.1 -C.sub.4 lower thioester, thiol, substituted or unsubstituted carboxyl, epoxy, substituted or unsubstituted C.sub.1 -C.sub.4 lower thioalkoxy; or R.sub.1 and R.sub.2 are fused to form C.sub.3 -C.sub.4 saturated or unsaturated chain; R.sub.3, R.sub.4, R.sub.5, R.sub.6 and R.sub.7 are independently hydrogen, halogen, hydroxy, nitro, C.sub.1 -C.sub.4 lower ester, C.sub.1 -C.sub.4 lower alkyl, C.sub.1 -C.sub.4 lower thioalkyl, substituted or unsubstituted C.

Abstract: A method for manufacturing a high strength lumber obtained by artificially compressing a volume of grown natural wood without any destruction of wood tissue, and which is made such that a pine tree is lumbered and exposed to a microwave whereby moisture content is forcibly discharged and cellulose is softened and thereby volume is constricted up to more than 70% by a hydraulic press during a latent heat is still present, so that a high strength lumber is obtained without any destruction of lumber tissue and due to this, a strength and hardness are improved about 30 times of original wood and a tensile strength is increased about up to 10 times of original wood.

Abstract: A data switching device which implement the data exchange between a plurality of terminals connected to the communication network. Even if the circuit connection exists in the relevant input port and the destination port, since the frame is transmitted to the output part through the dual circuit switch path, the intermix mode service is processed in the output and then the effective intermix mode service can be processed. Also, since the same circuit switch is dually used, the high reliability regarding to the switch failure can be obtained.