Patents by Inventor Young Hie Lee

Young Hie Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming low dielectric constant insulating film
    Patent number: 6043167
    Abstract: The method for forming an insulating film having a low dielectric constant, which is suitable for intermetal insulating film applications, by plasma enhanced chemical vapor deposition (PECVD) includes the step of supplying a first source gas containing fluorine and carbon to a dual-frequency, high density plasma reactor. The method also includes the step of supplying a second source gas containing silicon dioxide to the reactor. In this manner a fluorocarbon/silicon dioxide film is formed on a substrate in the reactor.
    Type: Grant
    Filed: October 10, 1997
    Date of Patent: March 28, 2000
    Assignee: LG Semicon Co., Ltd.
    Inventors: Young Hie Lee, Dong Sun Kim, Jin Won Park