Abstract: A method of forming a semiconductor device includes forming a mold structure on a substrate, forming a first mask layer having a deposition thickness on the mold structure and patterning the first mask layer to form first mask openings which expose the mold structure. The mold structure is etched to form holes that penetrate the mold structure. The first mask layer is thinned to form mask portions having thickness smaller than the deposition thickness. Conductive patterns are formed to fill the holes and the first mask openings. The first mask layer including the mask portions is etched to expose the mold structure. The conductive patterns include protrusions. A chemical mechanical polishing process is performed to remove the protrusions of the conductive patterns.

Abstract: A method of forming a semiconductor device includes forming a mold structure on a substrate, forming a first mask layer having a deposition thickness on the mold structure and patterning the first mask layer to form first mask openings which expose the mold structure. The mold structure is etched to form holes that penetrate the mold structure. The first mask layer is thinned to form mask portions having thickness smaller than the deposition thickness. Conductive patterns are formed to fill the holes and the first mask openings. The first mask layer including the mask portions is etched to expose the mold structure. The conductive patterns include protrusions. A chemical mechanical polishing process is performed to remove the protrusions of the conductive patterns.

Abstract: A semiconductor device including a direct contact and a bit line in a cell array region and a gate electrode structure in a peripheral circuit region, and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a substrate including a cell array region including a first active region and a peripheral circuit region including a second active region, a first insulating layer on the substrate, the first insulating layer including contact holes exposing the first active region, a direct contact in the contact holes, wherein a direct contact is connected to the first active region, a bit line connected to the direct contact in the cell array region and extending in a first direction, and a gate insulating layer and a gate electrode structure, wherein a dummy conductive layer including substantially the same material as the direct contact is in the peripheral circuit region.

Abstract: Background: Recently, studies on genome and transcritome of gastric cancer have suggested that gastric cancer is a heterogeneous disease caused by various genetic defects combined with environmental risk factors. In the present invention, a fusion protein expressed only in Korean gastric cancer tissues is detected by performing quantitative label-free proteome analysis. Result: A heterogeneous nuclear ribonucleoprotein A2/B1 (hnRNPA2B1)-family with sequence similarity 96 member A (FAM96A) fusion protein, which is not expressed in a normal gastric tissue, but expressed only in a gastric cancer tissue, is identified.

Abstract: Background: Recently, studies on genome and transcritome of gastric cancer have suggested that gastric cancer is a heterogeneous disease caused by various genetic defects combined with environmental risk factors. In the present invention, a fusion protein expressed only in Korean gastric cancer tissues is detected by performing quantitative label-free proteome analysis. Result: A tropomyosin 4 (TPM4)-anaplastic lymphoma receptor tyrosine kinase (ALK) fusion protein, which is not expressed in a normal gastric tissue, but expressed only in a gastric cancer tissue, is identified. As a result identified by the TPM4 antibody, a high-molecular TPM4 band is present only in a gastric cancer tissue.

Abstract: Methods of manufacturing a semiconductor device are provided. Methods may include forming first to third regions having densities different from one another on a substrate, covering the first to third regions to form an upper interlayer insulating film including a low step portion and a high step portion higher than the low step portion, forming an organic film on the upper interlayer insulating film, removing a part of the organic film to expose an upper surface of the high step portion, removing the high step portion so that an upper surface of the high step portion is disposed on at least the same line as the organic film disposed on the upper surface of the lower step portion, removing the remaining part of the organic film to expose the upper surface of the upper interlayer insulating film and flattening the upper surface of the upper interlayer insulating film.

Abstract: A semiconductor device including a direct contact and a bit line in a cell array region and a gate electrode structure in a peripheral circuit region, and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a substrate including a cell array region including a first active region and a peripheral circuit region including a second active region, a first insulating layer on the substrate, the first insulating layer including contact holes exposing the first active region, a direct contact in the contact holes, wherein a direct contact is connected to the first active region, a bit line connected to the direct contact in the cell array region and extending in a first direction, and a gate insulating layer and a gate electrode structure, wherein a dummy conductive layer including substantially the same material as the direct contact is in the peripheral circuit region.

Abstract: A treatment method for degenerative brain disorders using a pharmaceutically effective dose of the inhibitor of SUMO1 (small ubiquitin-like modifier 1) and BACE1 (?-secretase) interaction, or the inhibitor of SUMO1 expression or activation is provided. More specifically, it was confirmed that SUMO1 increased BACE1 accumulation and A? generation, that is SUMO1 regulated BACE1 accumulation by interacting with BACE1, and BACE1 dileucine motif was involved in SUMO1-mediated BACE1 accumulation. In addition, SUMO1 protein induced autophagy in H4 cells, while SUMO1 depletion reduced LC3-II level. It was further confirmed that SUMO1 and LC3 were co-localized in the cortex of APP transgenic mice. As shown herein, a pharmaceutically effective dose of the inhibitor of SUMO1 and BACE1 interaction or the inhibitor of SUMO1 expression can be effectively used for the treatment of degenerative brain disorders.

Abstract: A flexible membrane for a polishing head includes a main part having a first surface configured to make contact with a surface of a substrate and a second surface opposite to the first surface, a plurality of extensions extending substantially perpendicularly from the second surface of the main part so as to define a plurality of independent spaces, respectively, and an inner ring coupled with an inner side of an outermost extension of the extensions to support an edge portion of the main part. A bottom surface of the inner ring is substantially flat.

Abstract: A wiring structure of a semiconductor device may include an insulation interlayer on a substrate, the insulation interlayer having a linear first trench having a first width and a linear second trench having a second width, the linear second trench being in communication with a lower portion of the linear first trench, the first width being wider than the second width, and a conductive layer pattern in the linear first and second trenches.

Abstract: A method of manufacturing a stack-type semiconductor device, in which a first substrate and a second substrate are prepared so that the first substrate has a surface layer and the second substrate has an insulation layer. The first substrate and the second substrate are attached to each other to allow the surface layer to make contact with the insulation layer. The first substrate is partially separated from the second substrate to allow the surface layer to remain on a central portion of the second substrate. A sacrificial layer pattern is then formed on an edge portion of the second substrate having the surface layer. The sacrificial layer pattern and the surface layer are planarized. Thus, the sacrificial layer pattern may reduce damage to the edge portion of the second substrate so that the second substrate may have an improved flatness.

Abstract: The invention relates to methods and products for inhibiting caspase activation-induced A? accumulation. The invention is useful for diagnosing, preventing, and treating A?-accumulation-associated disorders, such as Alzheimer's disease.

Abstract: A wiring structure of a semiconductor device may include an insulation interlayer on a substrate, the insulation interlayer having a linear first trench having a first width and a linear second trench having a second width, the linear second trench being in communication with a lower portion of the linear first trench, the first width being wider than the second width, and a conductive layer pattern in the linear first and second trenches.

Abstract: A method of forming a cylindrical lower electrode of a capacitor in which metal is used as a lower electrode of a capacitor. A metal capping layer is used in order to protect the inner walls of the cylindrical metal lower electrode. A sacrificial insulating layer is patterned to form an aperture for forming the lower electrode. A metal lower electrode layer and the metal capping layer are sequentially formed. In order to electrically separate adjacent metal lower electrodes from each other, the metal capping layer and the metal lower electrode layer are simultaneously planarized until the sacrificial insulating layer is exposed. The sacrificial insulating layer and the metal capping layer that resides in the aperture are removed such that the cylindrical metal lower electrode having inner and outer walls is completed.

Abstract: The invention relates to methods and products for inhibiting caspase activation-induced A&bgr; accumulation. The invention is useful for diagnosing, preventing, and treating A&bgr; accumulation-associated disorders, such as Alzheimer's disease.