Abstract: The present disclosure relates to a wireless battery management system which ensures stability when obtaining battery data through wireless communication. The battery management system includes a manager node operating a primary channel and a secondary channel based on wireless communication and obtaining battery data from a monitor node by using the primary channel or the secondary channel and a monitor node connected to a battery module to collect battery data including one or more of a current, a voltage, a temperature, and self-diagnosis data of the battery module, transmit the collected battery data to the manager node through the primary channel, and when the transmission of the battery data through the primary channel fails, transmit the battery data to the manager node through the secondary channel.

Abstract: A hybrid type filtration structure for filtering liquid includes a first active layer, a porous supporting layer and a permeable layer. The first active layer has a first nano pore inner wall of which a function group included compound is combined with. The porous supporting layer has a plurality of pores and is disposed under the first active layer. The permeable layer is disposed under the porous supporting layer. The porous supporting layer includes a plurality of lipid bilayers having membrane protein inside of the pore, a molecule of water selectively passes through the membrane protein. The first nano pore passes through the first active layer vertically. The first nano pore and the pore are connected with each other through which liquid flows.

Abstract: A method for manufacturing a power semiconductor device includes forming a trench in a semiconductor substrate, forming a gate insulation film and a gate electrode in the trench, implanting a first conductivity type impurity into the semiconductor substrate to form a first conductivity type body region, implanting a second conductivity type impurity onto a surface of the semiconductor substrate to form a second conductivity type source region, forming an interlayer insulation film in the trench, implanting the first conductivity type impurity onto the surface of the semiconductor substrate to form a first conductivity type highly doped body contact region, exposing a portion of a side surface of the trench, and forming a source metal to be in contact with the exposed side surface of the trench.

Abstract: The description relates to a semiconductor die having a stacking structure of silicon-metallic conductive layer-silicon, and the semiconductor die according to embodiments includes a stacking structure of first semiconductor layer-metallic conductive layer-second semiconductor layer, and first and second power semiconductor devices in the first semiconductor layer, in which the first power semiconductor device includes a first source bump and a first gate bump, first trench gate electrodes under the first source bump, and a first channel among the plurality of first trench gate electrodes, in which the second power semiconductor device includes a second source bump and a second gate bump, second trench gate electrodes under the second source bump, and a second channel among the plurality of second trench gate electrodes, and in which the metallic conductive layer includes a metal layer.

Abstract: An apparatus for supplying chemical liquid may include a chemical liquid discharging member, a reservoir, a chemical liquid supplying member and a chemical liquid circulating member. The chemical liquid discharging member may discharge a chemical liquid onto a substrate. The reservoir may store the chemical liquid supplied to the chemical liquid discharging member. The chemical liquid supplying member may supply the chemical liquid stored in the reservoir. The chemical liquid circulating member may circulate the chemical liquid from the chemical liquid discharging member to the reservoir.

Abstract: A method for manufacturing a power semiconductor device includes forming a trench in a semiconductor substrate, forming a gate insulation film and a gate electrode in the trench, implanting a first conductivity type impurity into the semiconductor substrate to form a first conductivity type body region, implanting a second conductivity type impurity onto a surface of the semiconductor substrate to form a second conductivity type source region, forming an interlayer insulation film in the trench, implanting the first conductivity type impurity onto the surface of the semiconductor substrate to form a first conductivity type highly doped body contact region, exposing a portion of a side surface of the trench, and forming a source metal to be in contact with the exposed side surface of the trench.

Abstract: Disclosed is a novel compound having HSP90 inhibitory activity or a pharmaceutically acceptable salt thereof, and a medicinal use thereof, and composition comprising a dihydroxyphenyl compound or a benzamide compound, which is a novel compound having the HSP90 inhibitory activity of the present invention can effectively inhibit HSP90, and thus can be usefully used as a pharmaceutical composition for preventing or treating HSP90-mediated diseases or a health functional food for preventing or improving HSP90-mediated diseases, which selected from the group consisting of cancer diseases, degenerative neurological diseases and viral infections.

Abstract: The present invention relates to a novel compound having HSP90 inhibitory activity or a pharmaceutically acceptable salt thereof, and a medicinal use thereof, and composition comprising a dihydroxyphenyl compound or a benzamide compound, which is a novel compound having the HSP90 inhibitory activity of the present invention can effectively inhibit HSP90, and thus can be usefully used as a pharmaceutical composition for preventing or treating HSP90-mediated diseases or a health functional food for preventing or improving HSP90-mediated diseases, which selected from the group consisting of cancer diseases, degenerative neurological diseases and viral infections.

Abstract: Disclosed is an electronic device according to an embodiment of the disclosure that includes a battery and a battery mounting part that receives the battery therein, in which the battery mounting part includes a base and at least one side surface extending from an edge of the base and a recess area is formed in at least a partial area of the at least one side surface. Besides, it may be permissible to prepare various other embodiments speculated through the specification.

Abstract: A method for manufacturing a power semiconductor device includes forming a trench in a semiconductor substrate, forming a gate insulation film and a gate electrode in the trench, implanting a first conductivity type impurity into the semiconductor substrate to form a first conductivity type body region, implanting a second conductivity type impurity onto a surface of the semiconductor substrate to form a second conductivity type source region, forming an interlayer insulation film in the trench, implanting the first conductivity type impurity onto the surface of the semiconductor substrate to form a first conductivity type highly doped body contact region, exposing a portion of a side surface of the trench, and forming a source metal to be in contact with the exposed side surface of the trench.

Abstract: The description relates to a semiconductor die having a stacking structure of silicon-metallic conductive layer-silicon, and the semiconductor die according to embodiments includes a stacking structure of first semiconductor layer-metallic conductive layer-second semiconductor layer, and first and second power semiconductor devices in the first semiconductor layer, in which the first power semiconductor device includes a first source bump and a first gate bump, first trench gate electrodes under the first source bump, and a first channel among the plurality of first trench gate electrodes, in which the second power semiconductor device includes a second source bump and a second gate bump, second trench gate electrodes under the second source bump, and a second channel among the plurality of second trench gate electrodes, and in which the metallic conductive layer includes a metal layer.

Abstract: The description relates to a semiconductor die having a stacking structure of silicon-metallic conductive layer-silicon, and the semiconductor die according to embodiments includes a stacking structure of first semiconductor layer-metallic conductive layer-second semiconductor layer, and first and second power semiconductor devices in the first semiconductor layer, in which the first power semiconductor device includes a first source bump and a first gate bump, first trench gate electrodes under the first source bump, and a first channel among the plurality of first trench gate electrodes, in which the second power semiconductor device includes a second source bump and a second gate bump, second trench gate electrodes under the second source bump, and a second channel among the plurality of second trench gate electrodes, and in which the metallic conductive layer includes a metal layer.

Abstract: A cargo hold having a plurality of spaces, which are formed by a longitudinal bulkhead and a transverse bulkhead intersecting each other and store crude oil, comprises a void space located at least one corner among corners formed by intersection of the longitudinal bulkhead and the transverse bulkhead, wherein the void space has one side end and the other side end sealed by and fixed to the longitudinal bulkhead and the transverse bulkhead, respectively, thereby forming an empty space inside the bulkheads. The vessel cargo hold prevents a danger, such as fire and explosion, which may occur during the maintenance or repair of the vessel cargo hold for storing crude oil, and decreases work or the like required for the maintenance or repair of the cargo hold.

Abstract: The present invention relates to a novel compound having HSP90 inhibitory activity or a pharmaceutically acceptable salt thereof, and a medicinal use thereof, and composition comprising a dihydroxyphenyl compound or a benzamide compound, which is a novel compound having the HSP90 inhibitory activity of the present invention can effectively inhibit HSP90, and thus can be usefully used as a pharmaceutical composition for preventing or treating HSP90-mediated diseases or a health functional food for preventing or improving HSP90-mediated diseases, which selected from the group consisting of cancer diseases, degenerative neurological diseases and viral infections.

Abstract: The description relates to a semiconductor die having a stacking structure of silicon-metallic conductive layer-silicon, and the semiconductor die according to embodiments includes a stacking structure of first semiconductor layer-metallic conductive layer-second semiconductor layer, and first and second power semiconductor devices in the first semiconductor layer, in which the first power semiconductor device includes a first source bump and a first gate bump, first trench gate electrodes under the first source bump, and a first channel among the plurality of first trench gate electrodes, in which the second power semiconductor device includes a second source bump and a second gate bump, second trench gate electrodes under the second source bump, and a second channel among the plurality of second trench gate electrodes, and in which the metallic conductive layer includes a metal layer.

Abstract: The present disclosure relates to a liquid filtration structure with one or more macromolecule membrane structures including membrane proteins selectively permeable to water molecules and fixed within a pore. A liquid filtration structure according to an exemplary embodiment of the present disclosure increases stability and durability of macromolecule membrane structures including membrane proteins selectively permeable to water molecules, and, thus, can be effectively used in a filtration device for purifying water.

Abstract: A hybrid type filtration structure for filtering liquid includes a first active layer, a porous supporting layer and a permeable layer. The first active layer has a first nano pore inner wall of which a function group included compound is combined with. The porous supporting layer has a plurality of pores and is disposed under the first active layer. The permeable layer is disposed under the porous supporting layer. The porous supporting layer includes a plurality of lipid bilayers having membrane protein inside of the pore, a molecule of water selectively passes through the membrane protein. The first nano pore passes through the first active layer vertically. The first nano pore and the pore are connected with each other through which liquid flows.

Abstract: A liquid crystal display device comprises a first substrate, a second substrate which faces the first substrate, an electrode part which is provided on at least one of the first substrate and the second substrate, and a liquid crystal layer which comprises a liquid crystal composition and is provided between the first substrate and the second substrate. The liquid crystal composition includes a liquid crystal compound of Formula 1. wherein R1, R2, A11, A12, A13, A21, A22, Z11, Z12, Z13, Z21, Z22, a, b, c, d, and e are as described herein.

Abstract: The present invention relates to a power generating device using an electric furnace, and more particularly, to a power generating device using an electric furnace in which the electric furnace boils water using electricity to produce steam and a turbine is operated using the steam to produce electricity. The power generating device using an electric furnace according to the present invention includes an electric furnace, a steam pipe, a turbine, a power generator, a condenser, and a super-heater. The electric furnace heats water to produce steam. The steam pipe guides the steam ejected from the electric furnace. The turbine is disposed at an inlet of the steam pipe, and is operated with the steam. The power generator is operated by the turbine, and generates electricity. The condenser condenses the steam discharged after the turbine is operated. The super-heater superheats a condensate condensed in the condenser, and supplies the superheated condensate to the electric furnace.

Abstract: The present disclosure relates to a liquid filtration structure with one or more macromolecule membrane structures including membrane proteins selectively permeable to water molecules and fixed within a pore. A liquid filtration structure according to an exemplary embodiment of the present disclosure increases stability and durability of macromolecule membrane structures including membrane proteins selectively permeable to water molecules, and, thus, can be effectively used in a filtration device for purifying water.