Abstract: A method for fabricating a semiconductor device with a gate is provided. The method includes: forming a gate insulation layer over a substrate; sequentially forming a polysilicon layer, a silicide layer and a hard mask layer over the gate insulation layer; selectively patterning the hard mask layer; etching the silicide layer using the patterned hard mask layer as a mask such that the silicide layer has a cross-sectional etch profile that is negatively sloped; etching the polysilicon layer using the patterned hard mask layer as a mask to form a gate; and performing a light oxidation process to oxidize exposed sidewalls of the polysilicon layer and the silicide layer.

Abstract: A method for fabricating a semiconductor device with a gate is provided. The method includes: forming a gate insulation layer over a substrate; sequentially forming a polysilicon layer, a silicide layer and a hard mask layer over the gate insulation layer; selectively patterning the hard mask layer; etching the silicide layer using the patterned hard mask layer as a mask such that the silicide layer has a cross-sectional etch profile that is negatively sloped; etching the polysilicon layer using the patterned hard mask layer as a mask to form a gate; and performing a light oxidation process to oxidize exposed sidewalls of the polysilicon layer and the silicide layer.

Abstract: A method for forming a gate of a high integration semiconductor device in which, when forming a gate electrode on a semiconductor substrate by depositing a nitride layer and an anti-reflection layer after depositing a conductive layer constructed by a gate oxide layer, a polysilicon layer, a tungsten nitride layer and a tungsten layer, an etch prevention layer is formed between the nitride layer and the anti-reflection layer in order to prevent the nitride layer from over-etching, thereby preventing the leakage current, caused by the bridge formed between the gate and the bit line, from generating.

Abstract: A method for forming a gate of a high integration semiconductor device in which, when forming a gate electrode on a semiconductor substrate by depositing a nitride layer and an anti-reflection layer after depositing a conductive layer constructed by a gate oxide layer, a polysilicon layer, a tungsten nitride layer and a tungsten layer, an etch prevention layer is formed between the nitride layer and the anti-reflection layer in order to prevent the nitride layer from over-etching, thereby preventing the leakage current, caused by the bridge formed between the gate and the bit line, from generating.

Abstract: A method for manufacturing a gate electrode, the method including the steps of forming upon a semiconductor substrate a polysilicon layer, a metal nitride layer, a tungsten layer and a photoresist layer, patterning the photoresist layer on the tungsten layer into a predetermined configuration, etching the tungsten layer, the metal nitride layer, a portion of the polysilicon layer into the predetermined configuration by using a mixed etchant of fluorine and chlorine species etchant, and patterning the remaining polysilicon layer into the predetermined configuration by using chlorine etchant.