Abstract: According to an aspect of the present disclosure, there is provided a substrate treating apparatus comprising: a vessel part having a substrate treatment region formed therein and including a supply port through which a treating fluid is supplied to the substrate treatment region and an exhaust port through which the treating fluid is exhausted from the substrate treatment region; a fluid supply unit configured to supply the treating fluid to the substrate treatment region; an exhaust unit configured to exhaust the treating fluid from the vessel part. The exhaust unit comprises: a main line connected to the exhaust port; an extension line branched from at least one of first and second nodes of the main line and including at least one of a first orifice or a first check valve to control an exhaust speed; and an auxiliary line branched from a third node of the main line, where an orifice and a check valve are not formed.

Abstract: A substrate treating apparatus of the present disclosure comprises: a chamber member having an accommodation space configured to accommodate a vessel part where a substrate treatment region constituting a supercritical treatment space are formed, and an opening configured to move the substrate inside or outside; a shutter configured to open or close the chamber member; and a first exhaust part configured to discharge an internal air from the accommodation space to the outside, wherein the temperature of the substrate treatment region is increased.

Abstract: Provided is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device comprises forming a first layer which has a first surface, does not comprise an acid, and comprises a metal material; forming, on the first layer, a second layer which comprises a trench exposing the first surface, has a second surface intersecting the first surface within the trench, and comprises an acid and an organic material; providing a first precursor comprising an alkoxy group and silicon; and forming a third layer comprising silicon oxide on the second surface within the trench. The third layer is in contact with a portion of the first surface within the trench.

Abstract: Provided is an apparatus for measuring a slope change amount of a structure, the apparatus being characterized by including: a bottom body (100) formed in a spherical surface having a predetermined radius of curvature; a ball (200) installed on an upper surface of the bottom body (100) and moving due to a gravitational force; and a camera (300) for imaging the bottom body (100) on which the ball (200) is located. In accordance with the present invention, there is an effect in that a slope change amount of a structure for a certain period may accurately be measured.

Abstract: Provided is an apparatus for measuring a slope change amount of a structure, the apparatus being characterized by including: a bottom body (100) formed in a spherical surface having a predetermined radius of curvature; a ball (200) installed on an upper surface of the bottom body (100) and moving due to a gravitational force; and a camera (300) for imaging the bottom body (100) on which the ball (200) is located. In accordance with the present invention, there is an effect in that a slope change amount of a structure for a certain period may accurately be measured.

Abstract: The present invention relates to a substrate structure for LED lighting, the structure being capable of improving the hemispherical intensity distribution of a lighting device in which an LED is used, thereby improving the light efficiency of the lighting device. The substrate structure includes a first substrate for mounting a first LED thereon and three second substrates, each for mounting a second LED thereon. The second substrates are coupled to the first substrate such that the second substrates are perpendicular to the first substrate and are arranged at an angular interval which is within a range of 115° to 125° with respect to each other in a cross-sectional view taken parallel to the first substrate.

Abstract: The present invention relates to a substrate structure for LED lighting, the structure being capable of improving the hemispherical intensity distribution of a lighting device in which an LED is used, thereby improving the light efficiency of the lighting device. The substrate structure includes a first substrate for mounting a first LED thereon and three second substrates, each for mounting a second LED thereon. The second substrates are coupled to the first substrate such that the second substrates are perpendicular to the first substrate and are arranged at an angular interval which is within a range of 115° to 125° with respect to each other in a cross-sectional view taken parallel to the first substrate.