Abstract: An electronic device includes a display device, which may be fabricated using a described method. The display device includes a glass substrate including a first surface, a second surface opposite the first surface, and a side surface between the first surface and the second surface, an outermost structure on the first surface of the glass substrate and located adjacent to an edge of one side of the glass substrate, and a display area including a plurality of light emitting areas on the first surface of the glass substrate and located farther from the edge of the one side of the glass substrate than the outermost structure is. A minimum distance from the side surface of the glass substrate to the outermost structure is equal to 130 ?m or less.

Abstract: The present invention relates to a method for forming a TiNO metallic barrier layer acting as a diffusion barrier to intercept the diffusing of the Si atoms between metal layers, the method comprising the steps of: forming a TiN film through a sputtering equipment using Ar and N.sub.2 gas; implanting N.sub.2 O gas on the upper part of the TiN film; and annealing the resulting structure at N.sub.2 atmosphere for diffusing oxygen ions, thereby forming said resulting structure into uniform TiNO film.