Abstract: A super self-aligned heterojunction bipolar semiconductor device and its manufacturing method are disclosed. The present invention provides a super self-aligned heterojunction bipolar transistor that may maintain the operational stability and the uniformity of a device, facilitate the manufacturing process, and reduce manufacturing time by employing a highly concentrated thick polysilicon film; and its manufacturing method. Also, the present invention provides a super self-aligned heterojunction bipolar transistor that may reduce noise by making the base resistance reduced by a highly concentrated thick polysilicon film, and may minimize the parasitic capacitance between a collector and a base and between a base and an emitter, and the parasitic resistance of a base, so as to realize high-speed operation of a device; and its manufacturing method.