Abstract: A light device including a substrate, and first and second light emitters spaced apart from each other, and a power source to control the first light emitter and the second light emitter, in which the first and second light emitters include a light emitting region, a wavelength conversion layer disposed on the light emitting region, and a lateral reflection layer covering a region of a side of the light emitting region and the wavelength conversion layer, the first light emitter and the second light emitter are configured to output the same or different magnitudes of power by receiving the same or different magnitudes of current, the first and second light emitters are respectively configured to emit first light and second light, the first light emitter is electrically connected to the second light emitter through a common electrode.

Abstract: A light emitting device including a substrate, a light emitting structure disposed on the substrate and having a first light emitting region, a second light emitting region, and a third light emitting region, and an insulation layer to block unintended electrical connection between the first light emitting region and the second light emitting region, or between the second light emitting region and the third light emitting region, in which each of the first light emitting region, the second light emitting region, and the third light emitting region comprises a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, and a center of the first light emitting region overlaps a center of the second light emitting region and a center of the third light emitting region.

Abstract: A light emitting device including a substrate, a light emitting structure disposed on the substrate and having a first light emitting region, a second light emitting region, and a third light emitting region, and an insulation layer to block unintended electrical connection between the first light emitting region and the second light emitting region, or between the second light emitting region and the third light emitting region, in which each of the first light emitting region, the second light emitting region, and the third light emitting region comprises a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, and a center of the first light emitting region overlaps a center of the second light emitting region and a center of the third light emitting region.

Abstract: A light emitting diode including a first light emitting region, and a second light emitting region spaced apart from and surrounding the first light emitting region, in which the first light emitting region and the second light emitting region are configured to be independently operated.

Abstract: A light emitting diode including a first light emitting region, and a second light emitting region spaced apart from and surrounding the first light emitting region, in which the first light emitting region and the second light emitting region are configured to be independently operated.

Abstract: Provided is a standard plasmid for assaying a genetically modified plant, a method for quantitatively analyzing a target transgene within the genetically modified plant using the standard plasmid, and a kit for quantitatively analyzing the genetically modified plant including the standard plasmid, wherein the standard plasmid of the present invention is possible to be utilized for assaying a genome containing a 5-enoyl-4-pyruvylshikimate-3-phosphate synthase (EPSPS) gene or a cry1Ab gene, and in particular, significantly useful as a standard material capable of analyzing whether the genetically modified plant such as soybean RRS or GM maize MON810 is incorporated or an incorporation ratio thereof.

Abstract: Provided is a standard plasmid for assaying a genetically modified plant, a method for quantitatively analyzing a target transgene within the genetically modified plant using the standard plasmid, and a kit for quantitatively analyzing the genetically modified plant including the standard plasmid, wherein the standard plasmid of the present invention is possible to be utilized for assaying a genome containing a 5-enoyl-4-pyruvylshikimate-3-phosphate synthase (EPSPS) gene or a cry1Ab gene, and in particular, significantly useful as a standard material capable of analyzing whether the genetically modified plant such as soybean RRS or GM maize MON810 is incorporated or an incorporation ratio thereof.