Patents by Inventor Young-Hyun Kim

Young-Hyun Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150155477
    Abstract: Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.
    Type: Application
    Filed: February 10, 2015
    Publication date: June 4, 2015
    Inventors: Jeong Heon PARK, Woo Chang LIM, Se Chung OH, Young Hyun KIM, Sang Hwan PARK, Jang Eun LEE
  • Publication number: 20150121968
    Abstract: A washing machine includes a cabinet, a tub provided inside the cabinet to store wash water therein, a drum rotatably provided inside the tub, and a balancer comprising an upper side surface covering an outer surface of a bottom of the drum and a lower side surface formed at one side of the upper side surface in a planar shape while facing an inner surface of a bottom of the tub. The balancer is configured to counterbalance an unbalanced load of the drum, thereby saving energy and enhancing balancing efficiency.
    Type: Application
    Filed: October 20, 2014
    Publication date: May 7, 2015
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young Hyun KIM, Sang Up LEE, Dae Gyu KANG, Seung Youp LEE
  • Patent number: 8995765
    Abstract: A digital image processing apparatus and method are provided. The digital image processing apparatus includes: a Y component processing unit receiving a Y component and performing edge enhancement processing and first noise reduction processing on the Y component by using a memory allocated to the Y component; and a CbCr processing unit receiving a Cb component and a Cr component, and performing false color suppression processing and second noise reduction processing on the Cb component and the Cr component by using a memory allocated to the Cb component and the Cr component, where the Y component, the Cb component and the Cr component are variables of the YCbCr color space.
    Type: Grant
    Filed: December 12, 2012
    Date of Patent: March 31, 2015
    Assignee: SK Hynix Inc.
    Inventor: Young Hyun Kim
  • Patent number: 8987798
    Abstract: Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.
    Type: Grant
    Filed: June 17, 2014
    Date of Patent: March 24, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong Heon Park, Woo Chang Lim, Se Chung Oh, Young Hyun Kim, Sang Hwan Park, Jang Eun Lee
  • Patent number: 8957784
    Abstract: Disclosed herein is an advanced metering infrastructure system that includes electronic meters, each of which being configured to measure and store an amount of energy consumed by each customer and provided with a slave communication modem, a data concentrator for collecting meter data from the electronic meters via a master communication modem that performs wired/wireless communication with the slave communication modems of the electronic meters, and a meter reading server for receiving and managing the meter data collected by the data concentrator. The master communication modem and each of the slave communication modems implement mutual communication interfaces using a protocol stack. The protocol stack includes a network layer, an application layer, and a modem performance analysis layer disposed between the network layer and the application layer and configured to analyze quality of a communication link between the master communication modem and each slave communication modem.
    Type: Grant
    Filed: September 7, 2011
    Date of Patent: February 17, 2015
    Assignee: Korea Electric Power Corporation
    Inventors: No-Gil Myoung, Young-Hyun Kim, Sang-Youm Lee, Byung-Seok Park, In-Ji Choi, Ho-Wook Yang
  • Publication number: 20150040619
    Abstract: A washing machine includes a cabinet; a tub which is disposed in the cabinet and in which washing water is stored; a drain hose that guides the washing water in the tub toward an outer side of the cabinet; and a siphonage prevention unit disposed on the drain hose, wherein the siphonage prevention unit includes: a connection pipe having a connection flow path that communicates with the drain hose; an air pipe having an air flow path that communicates with the connection flow path; and a protrusion that is disposed adjacent to a communication portion in which the connection flow path and the air flow path communicate with each other and that protrudes from an inner side surface of the connection pipe. Through this configuration, a siphonage phenomenon in the drain hose can be prevented.
    Type: Application
    Filed: August 4, 2014
    Publication date: February 12, 2015
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dae Gyu KANG, Young Hyun KIM
  • Publication number: 20150013397
    Abstract: A washing machine including a filter device, a support, or an auxiliary damper, using pressure of water supplied thereto. The washing machine includes a casing, a reservoir installed inside the casing, a water supply tube connected to an upper portion of the reservoir such that wash water is supplied through the water supply tube, a drainage tube connected to a lower portion of the reservoir such that wash water is discharged through the drainage tube, and a filter device which allows wash water to be moved and eliminates foreign substances from the wash water at one side of the reservoir using pressure of the wash water supplied through the water supply tube. It may be possible to eliminate foreign substances from laundry using pressure of water supplied according to progress of operation of the washing machine without provision of additional power.
    Type: Application
    Filed: July 8, 2014
    Publication date: January 15, 2015
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Young Hyun KIM, Dae Gyu Kang
  • Patent number: 8881555
    Abstract: Disclosed are a drain device having a drain filter, which causes foreign substances contained in washing water to be effectively filtered out by a filter chamber to prevent the foreign substances from flowing into a pump chamber, and allows the washing water to smoothly flow in the filter chamber to use the drain filter for a long time, and a washing machine having the same. The washing machine includes a housing provided with a washing chamber; and a drain device including a filter chamber provided with a filter member installed therein filtering out foreign substances from washing water in the washing chamber, and a pump chamber connected to the filter chamber to forcibly discharge the washing water. The filter member has a sectional area gradually increased toward the pump chamber and is provided with an end terminal separated from an inlet of the pump chamber by a designated distance.
    Type: Grant
    Filed: April 8, 2008
    Date of Patent: November 11, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young Hyun Kim, Seoung Jin Seo, Jae Hyun Jang, Hong Seok Ko, Dong Bin Lim
  • Publication number: 20140327095
    Abstract: A magnetic device can include a tunnel bather and a hybrid magnetization layer disposed adjacent the tunnel barrier. The hybrid magnetization layer can include a first perpendicular magnetic anisotropy (PMA) layer, a second PMA layer, and an amorphous blocking layer disposed between the first and second PMA layers. The first PMA layer can include a multi-layer film in which a first layer formed of Co and a second layer formed of Pt or Pd are alternately stacked. A first dopant formed of an element different from those of the first and second layers can also be included in the first PMA layer. The second PMA layer can be disposed between the first PMA layer and the tunnel barrier, and can include at least one element selected from a group consisting of Co, Fe, and Ni.
    Type: Application
    Filed: April 16, 2014
    Publication date: November 6, 2014
    Inventors: Young-hyun KIM, Hee-ju SHIN, Woo-jin KIM, Sang-hwan PARK
  • Publication number: 20140308759
    Abstract: A method of forming a semiconductor device includes forming a perpendicular magnetized magnetic device, annealing the perpendicular magnetized magnetic device, and applying a magnetic field to the perpendicular magnetized magnetic device. The semiconductor device may be a magnetoresistance data storage device. The magnetic field is applied in a direction that is substantially perpendicular to a substrate coupled to the perpendicular magnetized magnetic device.
    Type: Application
    Filed: March 18, 2014
    Publication date: October 16, 2014
    Inventors: Woo-Jin KIM, Ki-Woong KIM, Young-Hyun KIM
  • Publication number: 20140297968
    Abstract: Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.
    Type: Application
    Filed: June 17, 2014
    Publication date: October 2, 2014
    Inventors: Jeong Heon PARK, Woo Chang LIM, Se Chung OH, Young Hyun KIM, Sang Hwan PARK, Jang Eun LEE
  • Publication number: 20140264680
    Abstract: A nonvolatile memory device is provided. The nonvolatile memory device comprises a plurality of impurity regions formed in a substrate, a first contact electrically connected to at least one of the impurity regions, a second contact electrically connected to at least one of the impurity regions, a first information storage portion formed at a first height from the substrate and electrically connected to the first contact, and a second information storage portion formed at a second height, which is different from the first height, from the substrate and electrically connected to the second contact.
    Type: Application
    Filed: March 4, 2014
    Publication date: September 18, 2014
    Inventors: Whan-Kyun Kim, Young-Hyun Kim, Woo-Jin Kim
  • Publication number: 20140256062
    Abstract: A method for fabricating a nonvolatile memory device is provided. The method includes forming a transistor including an impurity region formed in a substrate, forming a first interlayer insulation layer covering the transistor, the first interlayer insulation layer including a protrusion overlapping the impurity region, and forming an information storage unit on the protrusion, the information storage unit exposing side surfaces of the protrusion using point cusp magnetron-physical vapor deposition (PCM-PVD) and electrically connected to the impurity region.
    Type: Application
    Filed: February 28, 2014
    Publication date: September 11, 2014
    Inventors: Whan-Kyun Kim, Young-Hyun Kim, Woo-Jin Kim
  • Patent number: 8823546
    Abstract: Disclosed herein is an automatic meter reading system for an underground distribution line using wired/wireless communication. The system includes at least one Data Concentration Unit (DCU), at least one Wireless Gathering Unit (WGU), and at least one wireless communication modem. The DCU is installed in a ground transformer, and sends meter reading data to an underground high-voltage distribution line (DL) using a Frequency Division Duplex (FDD) power line communication repeating method. The WGU is installed on a ground rising pipe or at a multi-consumer lead-in wire, and sets up a higher wireless mesh network and a lower wireless mesh network. The wireless communication modem sets up the lower wireless mesh network along with the WGU and the wireless communication modems, gathers the meter reading data, stores the gathered meter reading data, and transfers the stored meter reading data to the DCU through the WGU.
    Type: Grant
    Filed: July 29, 2011
    Date of Patent: September 2, 2014
    Assignee: Korea Electric Power Corporation
    Inventors: No-Gil Myoung, Hyo-Yul Choi, Byung-Seok Park, Young-Hyun Kim, In-Ji Choi, Eun-Hye Im, Sang-Youm Lee
  • Patent number: 8803265
    Abstract: A magnetic memory layer and a magnetic memory device including the same, the magnetic memory layer including a first seed layer; a second seed layer on the first seed layer, the second seed layer grown according to a <002> crystal direction with respect to a surface of the first seed layer; and a main magnetic layer on the second seed layer, the main magnetic layer grown according to the <002> crystal direction with respect to a surface of the second seed layer.
    Type: Grant
    Filed: June 28, 2011
    Date of Patent: August 12, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Woo-chang Lim, Young-hyun Kim, Jun-ho Jeong, Hee-ju Shin
  • Publication number: 20140203773
    Abstract: A wireless power charging device and method for mobile equipment is disclosed. The wireless power charging device for mobile equipment includes: a signal oscillating unit receiving power from a power supply unit and oscillating a signal; a power signal generating unit generating a power signal by resonating with a signal oscillated by the signal oscillating unit; and a charging unit storing the generated power signal and supplying power to the mobile equipment on the basis of the stored power signal.
    Type: Application
    Filed: March 26, 2014
    Publication date: July 24, 2014
    Applicant: BNR TECHNOLOGY CO., LTD.
    Inventor: Young-Hyun KIM
  • Patent number: 8772846
    Abstract: Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.
    Type: Grant
    Filed: February 16, 2012
    Date of Patent: July 8, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong Heon Park, Woo Chang Lim, Sechung Oh, Young Hyun Kim, Sang Hwan Park, Jang Eun Lee
  • Patent number: 8772887
    Abstract: A magnetic tunnel junction element is provided. The magnetic tunnel junction element has first magnetic layer and second magnetic layer formed adjacent, e.g., on lower and upper portions of an insulating layer, respectively and each having a perpendicular magnetic anisotropy, a magnetic field adjustment layer formed on the second magnetic layer and having a perpendicular magnetic anisotropy, and a bather layer formed between the magnetic field adjustment layer and the second magnetic layer. The second magnetic layer and the magnetic field adjustment layer are magnetically decoupled from each other.
    Type: Grant
    Filed: May 18, 2012
    Date of Patent: July 8, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Woo-Chang Lim, Jang-Eun Lee, Se-Chung Oh, Woo-Jin Kim, Young-Hyun Kim, Jeong-Heon Park
  • Patent number: 8732922
    Abstract: A parylene C polymer that is electrically poled such that it is piezoelectric is presented. Methods for manufacturing the piezoelectric parylene C polymer with an optimal piezoelectric coefficient d33 are also disclosed. Actuators formed with piezoelectric parylene C are disclosed as well as sensor devices that incorporate piezoelectric parylene C using charge integrator circuits in which the integration time is longer than likely adiabatic temperature transients.
    Type: Grant
    Filed: October 13, 2011
    Date of Patent: May 27, 2014
    Assignee: California Institute of Technology
    Inventors: Justin Young Hyun Kim, Austin Cheng, Yu-Chong Tai
  • Patent number: 8693796
    Abstract: An image processing apparatus and method providing a high speed pipeline structure having a low level of complexity is described. The image processing apparatus includes a memory configured to store a plurality of data in a plurality of memory locations, where an ordinally specified data is in a corresponding ordinal memory location.
    Type: Grant
    Filed: January 30, 2012
    Date of Patent: April 8, 2014
    Assignee: SK Hynix Inc.
    Inventor: Young Hyun Kim