Abstract: A semiconductor memory device includes a memory cell array, a row decoder, a plurality of page buffers, and a voltage switching circuit. The memory cell array includes a plurality of memory cells. The row decoder is connected to the memory cell array through word lines. The plurality of page buffers are connected to the memory cell array through bit lines. The voltage switching circuit decodes an operation voltage and transmits the decoded operation voltage to the row decoder. The plurality of page buffers are formed in a first under cell region among first and second under cell regions, the first and second under cell regions being adjacent to each other in a first direction under the memory cell array. At least a portion of the voltage switching circuit is formed in an under slim region that is adjacent to the first under cell region and the second under cell region in a second direction.

Abstract: A method for manufacturing a vehicle wheel includes: a casting process of manufacturing the wheel in a one-piece body having a forming end and a temporary flange protruding at inner and outer sides of the wheel, respectively, wherein the one-piece body further includes a resonance chamber forming groove; a primary shape machining process of forming a stepped part at an outer circumferential side of the resonance chamber forming groove; a flow forming process of bending the forming end to be seated on the stepped part; a friction stir welding process of integrally bonding a portion where the forming end and the stepped part are in close contact with each other; a fine machining process of removing the temporary flange; and a sound-absorbing hole machining process of forming a sound-absorbing hole for communicating between the resonance chamber and an interior space of a tire in the forming end.

Abstract: The present invention relates to an E. coli hisG-derived ATP-phosphoribosyltransferase variant having a reduced feedback inhibition by histidine and a strain expressing the same. The variant may maintain its activity even at a high histidine concentration, thus increasing histidine production.

Abstract: Disclosed are a method for fabricating an enhancement mode transistor material, an enhancement mode transistor material fabricated thereby, an enhancement mode transistor including the same, and an amplifying circuit including the same. The method for fabricating an enhancement mode transistor material includes: a first step of mixing and reacting a solution including a conductive polymer and an ionic reactant including a negative ion that enables deprotonation of the conductive polymer.

Abstract: The present invention relates to an E. coli hisG-derived ATP-phosphoribosyltransferase variant having a reduced feedback inhibition by histidine and a strain expressing the same. The variant may maintain its activity even at a high histidine concentration, thus increasing histidine production.

Abstract: The present invention relates to an E. coli hisG-derived ATP-phosphoribosyltransferase variant having a reduced feedback inhibition by histidine and a strain expressing the same. The variant may maintain its activity even at a high histidine concentration, thus increasing histidine production.

Abstract: The present invention relates to an E. coli hisG-derived ATP-phosphoribosyltransferase variant having a reduced feedback inhibition by histidine and a strain expressing the same. The variant may maintain its activity even at a high histidine concentration, thus increasing histidine production.

Abstract: Provided is a mutant strain having improved aromatic amino acid production capability as a result of inactivation or weakening of activity of glutaminase which is expressed by glutaminase B (glsB) gene.

Abstract: Disclosed is a mutant strain having improved aromatic amino acid production capability due to inactivation or weakening of activity of an FMN/FAD exporter protein which is expressed by yeeO gene.

Abstract: Disclosed is a mutant strain having improved aromatic amino acid production capability as a result of the inactivation or weakening of activity of asparaginase which is expressed by ansB gene.

Abstract: An exemplary embodiment provides a device of moving a low ignition propensity cigarette paper which includes an air moving body portion having a curved surface, an inlet injecting air, and a plurality of outlets disposed at the curved surface to discharge the air, in which the low ignition propensity cigarette paper having a coating portion is floated and turned by the air discharged from the plurality of outlets.

Abstract: A low ignition propensity cigarette paper includes a first coating layer disposed in a combustion section combusted by smoking, and a second coating layer disposed in a cigarette butt section where smoking is finished, wherein a basis weight of the first coating layer is smaller than a basis weight of the second coating layer.

Abstract: An exemplary embodiment provides a device of moving a low ignition propensity cigarette paper which includes an air moving body portion having a curved surface, an inlet injecting air, and a plurality of outlets disposed at the curved surface to discharge the air, in which the low ignition propensity cigarette paper having a coating portion is floated and turned by the air discharged from the plurality of outlets.

Abstract: A device of processing a low ignition propensity cigarette paper includes a concave or convex surface portion facing a surface of a low ignition propensity cigarette paper having a coating portion, and a body portion supplied with energy from a heat source or a cooling source, and dries or cools the low ignition propensity cigarette paper.