Abstract: In a method of designing a mask layout, a wiring region for forming a metal wire is established, the wiring region having at least a standard width. Contact regions for forming contacts electrically connected to the metal wire are established in the wiring region. The contact regions adjacent to each other are grouped to divide the wiring region into a first region and a second region including the contact regions. First dummy regions are established in the first region, the first dummy regions corresponding to regions for forming first dummy patterns. Second dummy regions are established among the contact regions in the second region, the second dummy regions corresponding to regions for forming second dummy patterns.

Abstract: In a method of designing a mask layout, a wiring region for forming a metal wire is established, the wiring region having at least a standard width. Contact regions for forming contacts electrically connected to the metal wire are established in the wiring region. The contact regions adjacent to each other are grouped to divide the wiring region into a first region and a second region including the contact regions. First dummy regions are established in the first region, the first dummy regions corresponding to regions for forming first dummy patterns. Second dummy regions are established among the contact regions in the second region, the second dummy regions corresponding to regions for forming second dummy patterns.

Abstract: Provided are a method and apparatus for designing a fine pattern that can be entirely transferred onto an object. The method includes reading the original data of a fine pattern for exposure. The fine pattern is divided into a first pattern not requiring revision and a second pattern requiring revision. The fine pattern is revised by forming an auxiliary pattern maintaining a first distance D1 from the second pattern. A fine pattern to be transferred onto a target object is estimated by running an emulation program including a first auxiliary pattern and a second auxiliary pattern. The estimated fine pattern is compared to the original data of the fine pattern for exposure, and the revised fine pattern is designated as a final fine pattern if there is no difference between the estimated fine pattern and the original data of the fine pattern for exposure.

Abstract: In a mask for forming a fine pattern to completely transfer a first and a second pattern from the mask onto a receiving object, and a method of forming the mask, the mask includes a first pattern, a second pattern, and a supplemental pattern. The first pattern repeats in a first direction. The second pattern is arranged between and parallel to the first pattern and has a first width W1. The supplemental pattern is disposed between the first pattern and the second pattern, and is spaced apart by a first distance D1 in the first direction from the second pattern.

Abstract: Provided are a method and apparatus for designing a fine pattern that can be entirely transferred onto an object. The method includes reading the original data of a fine pattern for exposure. The fine pattern is divided into a first pattern not requiring revision and a second pattern requiring revision. The fine pattern is revised by forming an auxiliary pattern maintaining a first distance D1 from the second pattern. A fine pattern to be transferred onto a target object is estimated by running an emulation program including a first auxiliary pattern and a second auxiliary pattern. The estimated fine pattern is compared to the original data of the fine pattern for exposure, and the revised fine pattern is designated as a final fine pattern if there is no difference between the estimated fine pattern and the original data of the fine pattern for exposure.

Abstract: In a mask for forming a fine pattern to completely transfer a first and a second pattern from the mask onto a receiving object, and a method of forming the mask, the mask includes a first pattern, a second pattern, and a supplemental pattern. The first pattern repeats in a first direction. The second pattern is arranged between and parallel to the first pattern and has a first width W1. The supplemental pattern is disposed between the first pattern and the second pattern, and is spaced apart by a first distance D1 in the first direction from the second pattern.