Abstract: Disclosed is a chip-on-film (COF) type semiconductor package and a device using the same. The COF type semiconductor package may include an insulation substrate including a top surface and bottom surface, a semiconductor device on the top surface of the insulation substrate, a heat dissipating component on the bottom surface of the insulation substrate, and at least one space between the bottom surface of the insulation substrate and a top surface of the heat dissipating component.

Abstract: Disclosed is a chip-on-film (COF) type semiconductor package and a device using the same. The COF type semiconductor package may include an insulation substrate including a top surface and bottom surface, a semiconductor device on the top surface of the insulation substrate, a heat dissipating component on the bottom surface of the insulation substrate, and at least one space between the bottom surface of the insulation substrate and a top surface of the heat dissipating component.

Abstract: Disclosed is a chip-on-film (COF) type semiconductor package and a device using the same. The COF type semiconductor package may include an insulation substrate including a top surface and bottom surface, a semiconductor device on the top surface of the insulation substrate, a heat dissipating component on the bottom surface of the insulation substrate, and at least one space between the bottom surface of the insulation substrate and a top surface of the heat dissipating component.

Abstract: A non-volatile memory device which can be highly-integrated without a decrease in reliability, and a method of fabricating the same, are provided. In the non-volatile memory device, a first doped layer of a first conductivity type is disposed on a substrate. A semiconductor pillar of a second conductivity type opposite to the first conductivity type extends upward from the first doped layer. A first control gate electrode substantially surrounds a first sidewall of the semiconductor pillar. A second control gate electrode substantially surrounds a second sidewall of the semiconductor pillar and is separated from the first control gate electrode. A second doped layer of the first conductivity type is disposed on the semiconductor pillar.

Abstract: Methods of forming integrated circuit devices include forming at least one non-volatile memory cell on a substrate. The memory cell includes a plurality of phase-changeable material regions therein that are electrically coupled in series. This plurality of phase-changeable material regions are collectively configured to support at least 2-bits of data when serially programmed using at least four serial program currents. Each of the plurality of phase-changeable material regions has different electrical resistance characteristics when programmed.

Abstract: Disclosed is a chip-on-film (COF) type semiconductor package and a device using the same. The COF type semiconductor package may include an insulation substrate including a top surface and bottom surface, a semiconductor device on the top surface of the insulation substrate, a heat dissipating component on the bottom surface of the insulation substrate, and at least one space between the bottom surface of the insulation substrate and a top surface of the heat dissipating component.

Abstract: A non-volatile memory device which can be highly-integrated without a decrease in reliability, and a method of fabricating the same, are provided. In the non-volatile memory device, a first doped layer of a first conductivity type is disposed on a substrate. A semiconductor pillar of a second conductivity type opposite to the first conductivity type extends upward from the first doped layer. A first control gate electrode substantially surrounds a first sidewall of the semiconductor pillar. A second control gate electrode substantially surrounds a second sidewall of the semiconductor pillar and is separated from the first control gate electrode. A second doped layer of the first conductivity type is disposed on the semiconductor pillar.

Abstract: Methods of forming integrated circuit devices include forming at least one non-volatile memory cell on a substrate. The memory cell includes a plurality of phase-changeable material regions therein that are electrically coupled in series. This plurality of phase-changeable material regions are collectively configured to support at least 2-bits of data when serially programmed using at least four serial program currents. Each of the plurality of phase-changeable material regions has different electrical resistance characteristics when programmed.