Abstract: A calibration apparatus is provided. The calibration apparatus includes: an acquisition unit for acquiring a captured image from a capturing device that captures a specified region in which a plurality of markers are indicated; and an analysis unit for finding the physical size of each pixel in the captured image through the analysis of physical movement data of at least one of the specified region and the capturing device and the captured image.

Abstract: An overlay mark, an overlay measurement method using the same, and a manufacturing method of a semiconductor device using the same are provided. The overlay mark is for measuring an overlay based on an image, is configured to determine a relative misalignment between at least two pattern layers, and includes first to fourth overlay marks. The first overlay mark has a pair of first Moire patterns disposed on a center portion of the overlay mark. The second overlay mark has a pair of second Moire patterns disposed so as to face each other with the first Moire patterns interposed therebetween. The third overlay mark has a pair of third Moire patterns disposed on a first diagonal line with the first Moire patterns interposed therebetween. The fourth overlay mark has a pair of fourth Moire patterns disposed on a second diagonal line with the first Moire patterns interposed therebetween.

Abstract: An overlay mark, an overlay measurement method using the same, and a manufacturing method of a semiconductor device using the same are provided. The overlay mark is for measuring an overlay based on an image, is configured to determine a relative misalignment between at least two pattern layers, and includes first to fourth overlay marks. The first overlay mark has a pair of first Moire patterns disposed on a center portion of the overlay mark. The second overlay mark has a pair of second Moire patterns disposed so as to face each other with the first Moire patterns interposed therebetween. The third overlay mark has a pair of third Moire patterns disposed on a first diagonal line with the first Moire patterns interposed therebetween. The fourth overlay mark has a pair of fourth Moire patterns disposed on a second diagonal line with the first Moire patterns interposed therebetween.

Abstract: An apparatus, for measuring overlay, includes: a height difference detection optical system detecting a height difference between a first overlay mark and a second overlay mark; an illumination optical system irradiating the overlay mark with illumination light; a main beam splitter splitting a reflected light from the overlay mark into a first beam and a second beam; a first detector receiving the first beam and generating a first overlay mark image in which the first overlay mark is displayed; a second detector receiving the second beam and generating a second overlay mark image in which the second overlay mark is displayed; an imaging optical system allowing the first beam to be imaged on the first detector; and a telecentric imaging optical system adjusting a length of an optical path of the second beam to allow the second beam to be imaged on the second detector.