Abstract: The present invention relates to oxidation resistant copper nanoparticles, and to a method for producing the same, which includes the steps of: preparing a first solution composed of a solvent, a polymer, and an organic acid; stirring the first solution to produce a first stirred solution; mixing the first stirred solution, a copper precursor, and a first reducing agent to produce a second reactant solution; mixing a second reducing agent with the second reactant solution to produce a third reactant solution; and collecting copper nanoparticles separated from the third reactant solution, which is a very simple process performing the reactions at a normal temperature under atmospheric conditions to produce copper nanoparticles, and an eco-friendly method firstly applying a watery solvent so as to achieve mass production of copper nanoparticles only by mixing solutions.

Abstract: Metal nanowires with high linearity can be produced using metal salts at a relatively low temperature. A transparent conductive film can be formed using the metal nanowires. Particularly, the transparent conductive film has high transmittance, low sheet resistance, and good thermal, chemical and mechanical stability. The transparent conductive film has a high electrical conductivity due to the high linearity of the metal nanowires. The metal nanowires take up 5% or less of the volume of the transparent conductive film, ensuring high transmittance of the transparent conductive film. Furthermore, the metal nanowires are useful as replacements for existing conductive materials, such as ITO, conductive polymers, carbon nanotubes and graphene. The metal nanowires can be applied to flexible substrates and other various substrates due to their good adhesion and high applicability to the substrates. Moreover, the metal nanowires can find application in various fields, such as displays and solar cell devices.

Abstract: A p-type transparent oxide semiconductor includes tin oxide compounds represented by below chemical formula 1: Sn1-xMxO2??[Chemical Formula 1] wherein, in the chemical formula 1, the M is tri-valent metal and the X is a real number of 0.01˜0.05. The p-type transparent oxide semiconductor is applicable to active semiconductor devices such as TFT-LCD and transparent solar cell, due to excellent electrical and optical properties and shows superior properties in aspects of visible light transmittance (T), carrier mobility (?) and rectification ratio as well as transparency.

Abstract: A p-type transparent oxide semiconductor includes tin oxide compounds represented by below chemical formula 1: Sn1-xMxO2??[Chemical Formula 1] wherein, in the chemical formula 1, the M is tri-valent metal and the X is a real number of 0.01˜0.05. The p-type transparent oxide semiconductor is applicable to active semiconductor devices such as TFT-LCD and transparent solar cell, due to excellent electrical and optical properties and shows superior properties in aspects of visible light transmittance (T), carrier mobility (?) and rectification ratio as well as transparency.

Abstract: The present invention relates to oxidation resistant copper nanoparticles, and to a method for producing the same, which includes the steps of: preparing a first solution composed of a solvent, a polymer, and an organic acid; stirring the first solution to produce a first stirred solution; mixing the first stirred solution, a copper precursor, and a first reducing agent to produce a second reactant solution; mixing a second reducing agent with the second reactant solution to produce a third reactant solution; and collecting copper nanoparticles separated from the third reactant solution, which is a very simple process performing the reactions at a normal temperature under atmospheric conditions to produce copper nanoparticles, and an eco-friendly method firstly applying a watery solvent so as to achieve mass production of copper nanoparticles only by mixing solutions.

Abstract: Metal nanowires with high linearity can be produced using metal salts at a relatively low temperature. A transparent conductive film can be formed using the metal nanowires. Particularly, the transparent conductive film has high transmittance, low sheet resistance, and good thermal, chemical and mechanical stability. The transparent conductive film has a high electrical conductivity due to the high linearity of the metal nanowires. The metal nanowires take up 5% or less of the volume of the transparent conductive film, ensuring high transmittance of the transparent conductive film. Furthermore, the metal nanowires are useful as replacements for existing conductive materials, such as ITO, conductive polymers, carbon nanotubes and graphene. The metal nanowires can be applied to flexible substrates and other various substrates due to their good adhesion and high applicability to the substrates. Moreover, the metal nanowires can find application in various fields, such as displays and solar cell devices.

Abstract: Metal nanowires with high linearity can be produced using metal salts at a relatively low temperature. A transparent conductive film can be formed using the metal nanowires. Particularly, the transparent conductive film has high transmittance, low sheet resistance, and good thermal, chemical and mechanical stability. The transparent conductive film has a high electrical conductivity due to the high linearity of the metal nanowires. The metal nanowires take up 5% or less of the volume of the transparent conductive film, ensuring high transmittance of the transparent conductive film. Furthermore, the metal nanowires are useful as replacements for existing conductive materials, such as ITO, conductive polymers, carbon nanotubes and graphene. The metal nanowires can be applied to flexible substrates and other various substrates due to their good adhesion and high applicability to the substrates. Moreover, the metal nanowires can find application in various fields, such as displays and solar cell devices.

Abstract: A p-type transparent oxide semiconductor includes tin oxide compounds represented by below chemical formula 1: Sn1-xMxO2??[Chemical Formula 1] wherein, in the chemical formula 1, the M is tri-valent metal and the X is a real number of 0.01˜0.05. The p-type transparent oxide semiconductor is applicable to active semiconductor devices such as TFT-LCD and transparent solar cell, due to excellent electrical and optical properties and shows superior properties in aspects of visible light transmittance (T), carrier mobility (?) and rectification ratio as well as transparency.

Abstract: Metal nanowires with high linearity can be produced using metal salts at a relatively low temperature. A transparent conductive film can be formed using the metal nanowires. Particularly, the transparent conductive film has high transmittance, low sheet resistance, and good thermal, chemical and mechanical stability. The transparent conductive film has a high electrical conductivity due to the high linearity of the metal nanowires. The metal nanowires take up 5% or less of the volume of the transparent conductive film, ensuring high transmittance of the transparent conductive film. Furthermore, the metal nanowires are useful as replacements for existing conductive materials, such as ITO, conductive polymers, carbon nanotubes and graphene. The metal nanowires can be applied to flexible substrates and other various substrates due to their good adhesion and high applicability to the substrates. Moreover, the metal nanowires can find application in various fields, such as displays and solar cell devices.

Abstract: The present invention relates to nickel-manganese (Ni—Mn) binary compounds useful as an electrode material for electrochemical supercapacitors, which is one of nickel-manganese coprecipitated hydroxides having a spinel-like structure, nickel-manganese coprecipitated hydroxocarbonates having a calcite-like structure and nickel-manganese oxides having an ilmenite-like structure. The present invention also relates to a method of preparing the above nickel-manganese (Ni—Mn) binary compounds by chemical coprecipitation and freeze-drying. Since the nickel-manganese binary compounds according to the present invention show high electrochemical efficiency, good reversibility, excellent specific capacity per unit area, a low capacity fade rate and improved cycle life, they can be effectively used as an electrode material for electrochemical supercapacitors.

Abstract: There is provided a process of preparing low-temperature sintered microwave dielectric ceramics, prepared by a process comprising co-precipitating Nb and Bi or Zn in an aqueous basic solution to obtain a BiNbO4 or Zn3Nb2O8 precursor powder, thermally decomposing the powder to obtain BiNbO4 or Zn3Nb2O8 powder, adding CuO and V2O5, pulverizing and sintering the mixture, which produces ceramics having small dielectric losses (Q·f0>15,000 GHz) and high dielectric constant (k=20–45) at microwave frequencies by sintering at a low temperature of 700 to 750° C. Thus, the microwave dielectric ceramics prepared in accordance with the present invention can be advantageously used in multi-layer ceramic packaging such as filter planar antenna, microwave oscillator, etc., which comprise base metals such as silver (Ag) and copper (Cu) as an internal electrode.

Abstract: A method for preparing a perpendicularly magnetizable material usable on magnetic recording media comprises the steps of: dissolving at least one member of the group consisting of strontium chloride and strontium nitrate with at least one member of the group consisting of iron chloride and iron nitrate in distilled water; adding citric acid to the resultant solution; controlling the pH of the solution to a range sufficient to completely dissociate the citric acid; heating the resultant solution with stirring to yield a gelatinous precursor; and subjecting the precursor to a temperature sufficiently high to remove the organic constituents thereof, which is characterized by controlling the pH of the solution to gelate the solution without the use of ethylene glycol, and can provide a perpendicularly magnetizable material superior in magnetic and particle properties.