Abstract: An embodiment is directed to a method of manufacturing a polycrystalline silicon layer, the method including providing a crystallization substrate, the crystallization substrate having an amorphous silicon layer on a first substrate, providing a reflection substrate, the reflection substrate having a first region with a reflection panel therein and a second region without the reflection panel, disposing the crystallization substrate and the reflection substrate on one another, and selectively crystallizing the amorphous silicon layer by directing a laser beam onto the crystallization substrate and the reflection substrate, and reflecting the laser beam from the reflection panel.

Abstract: A laser irradiation apparatus provides a laser beam along a scan direction to a semiconductor layer including a plurality of pixel areas. The laser irradiation apparatus includes at least one laser mask including a plurality of slit groups respectively facing portions of the plurality of pixel areas and a laser generator generating the laser beam that pass through the plurality of slit groups of the at least one laser mask.

Abstract: A laser irradiation apparatus for irradiating a laser beam to a semiconductor layer including a plurality of pixel areas, the apparatus includes a laser generator generating the laser beam, and an optical switching unit time-dividing the laser beam generated from the laser generator and transmitting a plurality of time-divided laser beams to a plurality of optical systems. The apparatus includes a first optical system of the plurality of optical systems that receives a first time-divided laser beam and irradiates a first laser slit beam along a first irradiation direction, and a second optical system of the plurality of optical systems that receives a second time-divided laser beam and irradiates a second laser slit beam along a second irradiation direction that is parallel with the first irradiation direction. The first laser slit beam and the second laser slit beam crystallize partial areas at a same location in the respective pixel areas.

Abstract: Provided are a crystallization apparatus and method, which prevent cracks from being generated, a method of manufacturing a thin film transistor (TFT), and a method of manufacturing an organic light emitting display apparatus. The crystallization apparatus includes a chamber for receiving a substrate, a first flash lamp and a second flash lamp, which are disposed facing each other within the chamber, wherein amorphous silicon layers are disposed on a first surface of the substrate facing the first flash lamp and a second surface of the substrate facing the second flash lamp, respectively.

Abstract: A laser crystallization apparatus for crystallizing a thin film of a substrate, the laser crystallization apparatus includes a laser beam emitting unit configured to scan the substrate in a predetermined direction with a laser beam, a stage configured to support the substrate, a fixing part disposed on a first part of the stage, the fixing part having a shape corresponding to a corner of the substrate, and a driving unit configured to lift a second part of the stage to be higher than the first part of the stage, the substrate on the stage being configured to slide toward and engage with the fixing part.

Abstract: A display device includes a substrate, first and second signal lines formed on the substrate, a first thin film transistor connected to the first and second signal lines, a gate driver and a data driver connected to the first signal line and the second signal line, respectively, and a second thin film transistor formed in at least one of the gate driver and the data driver The first thin film transistor and the second thin film transistor include a first semiconductor and a second semiconductor, respectively, and the first semiconductor and the second semiconductor are formed at the different layers from each other.

Abstract: A display apparatus, such as an organic light emitting diode (“OLED”) display, is driven by thin film transistors (“TFTs”), including a driving TFT and a switching TFT, and a pixel electrode. The display apparatus includes an amorphous silicon layer for the switching TFT and a microcrystalline silicon or polycrystalline silicon layer for the driving TFT. The amorphous silicon layer and the microcrystalline silicon layer are separated by an insulating layer. The apparatus provides product reliability and high image quality. A method of manufacturing the apparatus is characterized by reducing processing steps, and using a special mask which is a half tone mask or a slit mask adapted to forming a source electrode and a drain electrode of the switching TFT or the driving TFT and a semiconductor layer during a photolithographic process.

Abstract: A flat panel display device includes a substrate including a pixel area having a plurality of pixel parts and a peripheral circuit area disposed adjacent to the pixel area to drive the pixel parts, a circuit TFT disposed in the peripheral circuit area, the circuit TFT including a first semiconductor layer having a first crystal growth in a lateral direction, and a pixel TFT disposed in the pixel area, the pixel TFT including a second semiconductor layer having a second crystal isotropic growth.

Abstract: A method of manufacturing a thin film transistor array panel includes forming an amorphous silicon film on an insulating substrate; forming a sacrificial film having an embossed surface on the amorphous silicon film; contacting a metal plate with the sacrificial film and performing heat-treatment for crystallizing the amorphous silicon film to change the amorphous silicon film to a polycrystalline silicon film; removing the metal plate and the sacrificial film; patterning the polycrystalline silicon film to form a semiconductor; forming a gate insulating layer which covers the semiconductor; forming a gate line on the gate insulating layer, a portion of the gate line overlapping the semiconductor; heavily doping a conductive impurity into portions of the semiconductor to form a source region and a drain region; forming an interlayer insulating layer which covers the gate line and the semiconductor; and forming a data line and an output electrode connected to the source and drain regions, respectively, on the

Abstract: The present invention provides a display device and a method of driving the same.

Abstract: A transflective liquid crystal display device has improved light efficiency. A method of fabricating a transflective liquid crystal display device including a thin film transistor substrate having a transmissive region and a reflective region, includes forming a retardation layer on a lower surface of the thin film transistor substrate, aligning a mask having a reflective region pattern on the lower surface of the thin film transistor substrate, and forming a light efficiency enhancer by selectively removing the retardation layer by irradiating a laser onto the lower surface of the thin film transistor substrate through the mask.

Abstract: A display device includes: a first insulating substrate; a first polarizing plate formed on an external surface of the first insulating substrate; a second insulating substrate coupled to the first insulating substrate; a liquid crystal layer interposed between the first insulating substrate and the second insulating substrate; a first resistive film formed on an external surface of the second insulating substrate; a second polarizing plate positioned on the first resistive film; a supporting film positioned on an internal surface of the second polarizing plate and having isotropic property; a second resistive film formed on the supporting film and facing the first resistive film; and a diffusion layer interposed between the second insulating substrate and the second polarizing plate.

Abstract: A display apparatus, such as an organic light emitting diode (“OLED”) display, is driven by thin film transistors (“TFTs”), including a driving TFT and a switching TFT, and a pixel electrode. The display apparatus includes an amorphous silicon layer for the switching TFT and a microcrystalline silicon or polycrystalline silicon layer for the driving TFT. The amorphous silicon layer and the microcrystalline silicon layer are separated by an insulating layer. The apparatus provides product reliability and high image quality. A method of manufacturing the apparatus is characterized by reducing processing steps, and using a special mask which is a half tone mask or a slit mask adapted to forming a source electrode and a drain electrode of the switching TFT or the driving TFT and a semiconductor layer during a photolithographic process.

Abstract: A transflective liquid crystal display device has improved light efficiency. A method of fabricating a transflective liquid crystal display device including a thin film transistor substrate having a transmissive region and a reflective region, includes forming a retardation layer on a lower surface of the thin film transistor substrate, aligning a mask having a reflective region pattern on the lower surface of the thin film transistor substrate, and forming a light efficiency enhancer by selectively removing the retardation layer by irradiating a laser onto the lower surface of the thin film transistor substrate through the mask.

Abstract: A method of manufacturing a thin film transistor array panel includes forming an amorphous silicon film on an insulating substrate; forming a sacrificial film having an embossed surface on the amorphous silicon film; contacting a metal plate with the sacrificial film and performing heat-treatment for crystallizing the amorphous silicon film to change the amorphous silicon film to a polycrystalline silicon film; removing the metal plate and the sacrificial film; patterning the polycrystalline silicon film to form a semiconductor; forming a gate insulating layer which covers the semiconductor; forming a gate line on the gate insulating layer, a portion of the gate line overlapping the semiconductor; heavily doping a conductive impurity into portions of the semiconductor to form a source region and a drain region; forming an interlayer insulating layer which covers the gate line and the semiconductor; and forming a data line and an output electrode connected to the source and drain regions, respectively, on the

Abstract: A flat panel display device includes a substrate including a pixel area having a plurality of pixel parts and a peripheral circuit area disposed adjacent to the pixel area to drive the pixel parts, a circuit TFT disposed in the peripheral circuit area, the circuit TFT including a first semiconductor layer having a first crystal growth in a lateral direction, and a pixel TFT disposed in the pixel area, the pixel TFT including a second semiconductor layer having a second crystal isotropic growth.

Abstract: A thin film transistor for a display device includes a substrate, a gate electrode formed on the substrate, a gate insulating layer formed on the gate electrode, a polycrystalline semiconductor formed on the gate insulating layer and overlapping the gate electrode, a source electrode partially overlapping the polycrystalline semiconductor, and a drain electrode partially overlapping the polycrystalline semiconductor. The polycrystalline semiconductor includes a plurality of first polycrystalline semiconductors that are doped with conductive impurities and a plurality of second polycrystalline semiconductors that are not doped with conductive impurities, and the first polycrystalline semiconductors are disposed between and connected in series with adjacent ones of the second polycrystalline semiconductors.

Abstract: A display device and a manufacturing method thereof are provided. The display device includes a substrate, first and second signal lines formed on the substrate, a first thin film transistor connected to the first and second signal lines., a gate driver and a data driver connected to the first signal line and the second signal line, respectively, and a second thin film transistor formed in at least one of the gate driver and the data driver The first thin film transistor and the second thin film transistor include a first semiconductor and a second semiconductor, respectively, and the first semiconductor and the second semiconductor are formed at the different layers from each other.