Abstract: The present application relates to a method of generating a downlink frame. The method of generating the downlink frame includes: generating a first short sequence and a second short sequence indicating cell group information; generating a first scrambling sequence and a second scrambling sequence determined by the primary synchronization signal; generating a third scrambling sequence determined by the first short sequence and a fourth scrambling sequence determined by the second short sequence; scrambling the short sequences with the respective scrambling sequences; and mapping the secondary synchronization signal that includes the first short sequence scrambled with the first scrambling sequence, the second short sequence scrambled with the second scrambling sequence and the third scrambling sequence, the second short sequence scrambled with the first scrambling sequence and the first short sequence scrambled by the second scrambling sequence and the fourth scrambling sequence to a frequency domain.

Abstract: Disclosed is a technique for switching from a master node to a secondary node in a communication system. A method of a first communication node may comprise: adding the first communication node as a primary secondary cell (PSCell) to a second communication node through dual connectivity (DC); generating a first user plane path for smart dynamic switching (SDS) and a first instance for supporting the first user plane path according to a request from the second communication node; transmitting information on the first user plane path and the first instance to a terminal; receiving user data based on the first user plane path from the terminal as the first instance; and transmitting the user data to a core network using the first user plane path.

Abstract: An electronic device includes a display device, which may be fabricated using a described method. The display device includes a glass substrate including a first surface, a second surface opposite the first surface, and a side surface between the first surface and the second surface, an outermost structure on the first surface of the glass substrate and located adjacent to an edge of one side of the glass substrate, and a display area including a plurality of light emitting areas on the first surface of the glass substrate and located farther from the edge of the one side of the glass substrate than the outermost structure is. A minimum distance from the side surface of the glass substrate to the outermost structure is equal to 130 ?m or less.

Abstract: Provided is a method of using a plasma etching apparatus in semiconductor manufacturing, the method including using a plasma etching apparatus in semiconductor manufacturing, the plasma etching apparatus comprising a component including a composite sintered body therein, wherein the composite sintered body comprises 30 vol % to 70 vol % of yttria (Y2O3) and 30 vol % to 70 vol % of magnesia (MgO), and wherein the component has plasma resistance. In addition, provided is a method of reducing etching by plasma in a plasma etching apparatus during semiconductor manufacturing, the method including providing a plasma etching apparatus for manufacturing a semiconductor including a component including a composite sintered body, wherein the composite sintered body comprises 30 vol % to 70 vol % of yttria (Y2O3) and 30 vol % to 70 vol % of magnesia (MgO), and wherein the component has plasma resistance.

Abstract: Provided is a plasma etching apparatus component for manufacturing a semiconductor characterized by including a composite sintered body which contains 30 vol % to 70 vol % of yttria (Y2O3) and 30 vol % to 70 vol % of magnesia (MgO) and having plasma resistance. The plasma etching apparatus component for manufacturing a semiconductor provided in one aspect of the present invention has excellent corrosion resistance to plasma, and may have good corrosion resistance to plasma even when the composite sintered body is sintered at a relatively low relative density. In addition, the composite sintered body has a small crystal grain size and a small increase in surface roughness after etching, so that there is an effect that contaminant particles may be reduced. Furthermore, the plasma etching apparatus component for manufacturing a semiconductor has excellent strength compared to a typical plasma-resistant material, is inexpensive, and is excellent in terms of economic feasibility and utilization.

Abstract: Disclosed are a semiconductor device and a stacked semiconductor package. The semiconductor device may include a semiconductor chip and a plurality of chip pads disposed on the semiconductor chip in a second horizontal direction perpendicular to a first horizontal direction. The plurality of chip pads may include: a first chip pad connected to a wire extending in the first horizontal direction, when seen from the top; and a second chip pad connected to a diagonal wire extending in a direction at an angle to the first and second horizontal directions, when seen from the top. The width of the first chip pad in the second horizontal direction may be smaller than the width of the second chip pad in the second horizontal direction.

Abstract: Disclosed are a semiconductor device and a stacked semiconductor package. The semiconductor device may include a semiconductor chip and a plurality of chip pads disposed on the semiconductor chip in a second horizontal direction perpendicular to a first horizontal direction. The plurality of chip pads may include: a first chip pad connected to a wire extending in the first horizontal direction, when seen from the top; and a second chip pad connected to a diagonal wire extending in a direction at an angle to the first and second horizontal directions, when seen from the top. The width of the first chip pad in the second horizontal direction may be smaller than the width of the second chip pad in the second horizontal direction.

Abstract: A method of operating a memory controller is provided. The method of operating a memory controller according to an exemplary embodiment of the present inventive concepts includes sequentially receiving, by the memory controller, first data segments each having a first size from a host, sequentially storing, by the memory controller, the first data segments in the buffer until a sum of sizes of changed data among data stored in a buffer included in the memory controller is a second size, and programming, by the memory controller, the changed data having the second size in a memory space of a non-volatile memory as a second data segment.

Abstract: The present invention relates to a method of manufacturing a light transmitting yttria member by using hot-press sintering. The present invention provides a method of manufacturing light transmitting yttria by performing hot-press sintering on a molded body made of raw material powder including yttria by using a hot-press sintering apparatus, in which the hot-press sintering is performed in a state in which a spacer is interposed between the molded body and a pressing surface of the molded body, and the spacer is made of heat-resistant metal which is substantially unreactive to the molded body at a sintering temperature. According to the present invention, it is possible to manufacture highly compacted light transmitting yttria having light transmittance of 80% by using a single hot-press sintering process.

Abstract: A method of operating a memory controller is provided. The method of operating a memory controller according to an exemplary embodiment of the present inventive concepts includes sequentially receiving, by the memory controller, first data segments each having a first size from a host, sequentially storing, by the memory controller, the first data segments in the buffer until a sum of sizes of changed data among data stored in a buffer included in the memory controller is a second size, and programming, by the memory controller, the changed data having the second size in a memory space of a non-volatile memory as a second data segment.

Abstract: Disclosed herein is a method of stabilizing alpha-sialon phosphor, including the steps of: mixing raw powder including Si3N4, AlN, a rare-earth metal oxide and calcium nitride (Ca3N2) as a calcium source; heat-treating the raw powder to convert the calcium source into Ca—Al—Si—N based compound comprising CaAlSiN3 or CaAl2Si4N8; and sintering the heat-treated raw powder thereby forming alpha-sialon phosphor. This method is advantageous in that a reliable alpha-sialon phosphor having high photoluminescence intensity can be manufactured regardless of weather, season, environment and the like.

Abstract: The present invention discloses a conductive plasma-resistant member including an yttrium oxide. The plasma-resistant member of the present invention includes an yttrium compound which includes a matrix phase consisting of yttrium oxides, and a conductive dispersed phase. According to the present invention, the present invention provides a semiconductor-grade yttria composite which may be used as a plasma-resistant member requiring conductivity like a focus ring.

Abstract: Disclosed herein is a method of stabilizing alpha-sialon phosphor, including the steps of: mixing raw powder including Si3N4, AlN, a rare-earth metal oxide and calcium nitride (Ca3N2) as a calcium source; heat-treating the raw powder to convert the calcium source into Ca—Al—Si—N based compound comprising CaAlSiN3 or CaAl2Si4N8; and sintering the heat-treated raw powder thereby forming alpha-sialon phosphor. This method is advantageous in that a reliable alpha-sialon phosphor having high photoluminescence intensity can be manufactured regardless of weather, season, environment and the like.

Abstract: The present invention relates to a method of manufacturing a porous pre-sintered granule for a sintered reaction-bonded silicon nitride, to which a pressure forming technology can be applied to obtain a porous sintered reaction-bonded silicon nitride having high porosity and having a structure in which macropores and micropores coexist with each other, and to a porous pre-sintered granule manufactured by the method. The method includes the steps of: granulating a raw material comprising silicon and sintering additives including yttrium, aluminum and at least one alkali earth metal compound; and pre-sintering the granulated raw material at a temperature of 1300˜1375° C. under an inert atmosphere. According to the present invention, a porous pre-sintered granule for porous sintered reaction-bonded silicon nitride, which can increase the air permeability and trapping efficiency by controlling the size of a pore channel such that macropores and micropores coexist, can be manufactured.

Abstract: A method of operating a memory controller includes determining an access property for a target address region and controlling a threshold voltage distribution of memory cells included in the target address region according to the determined access property.

Abstract: Disclosed is a porous sintered reaction-bonded silicon nitride ceramic, which includes an array of sintered granules having fine pore channels in the sintered granules and coarse pore channels formed between the sintered granules, and in which the pore channel size is controlled so that both coarse pores and fine pores are formed together in the ceramic, thus simultaneously enhancing air permeability and capturing efficiency. A method of manufacturing the porous sintered reaction-bonded silicon nitride ceramic is also provided.

Abstract: Disclosed is a porous sintered reaction-bonded silicon nitride ceramic, which includes an array of sintered granules having fine pore channels in the sintered granules and coarse pore channels formed between the sintered granules, and in which the pore channel size is controlled so that both coarse pores and fine pores are formed together in the ceramic, thus simultaneously enhancing air permeability and capturing efficiency. A method of manufacturing the porous sintered reaction-bonded silicon nitride ceramic is also provided.

Abstract: The present invention relates to a method of manufacturing a porous pre-sintered granule for a sintered reaction-bonded silicon nitride, to which a pressure forming technology can be applied to obtain a porous sintered reaction-bonded silicon nitride having high porosity and having a structure in which macropores and micropores coexist with each other, and to a porous pre-sintered granule manufactured by the method. The method includes the steps of: granulating a raw material comprising silicon and sintering additives including yttrium, aluminum and at least one alkali earth metal compound; and pre-sintering the granulated raw material at a temperature of 1300˜1375° C. under an inert atmosphere. According to the present invention, a porous pre-sintered granule for porous sintered reaction-bonded silicon nitride, which can increase the air permeability and trapping efficiency by controlling the size of a pore channel such that macropores and micropores coexist, can be manufactured.

Abstract: An internal cooling apparatus for automobiles includes a first expansion valve for spraying a coolant to a main evaporator through a high-pressure pipe, a compressor receiving the coolant evaporated in the main evaporator through a low-pressure pipe, a condenser receiving the coolant compressed in the compressor, and a plurality of sub-evaporators each being installed inside of a seat to contact an automobile passenger. One end of each of the sub-evaporators is communicated with the high-pressure pipe and the other end thereof is communicated with the low-pressure pipe such that part of the coolant sprayed through the first expansion valve is supplied to the compressor via each of the sub-evaporators.

Abstract: Disclosed is a porous sintered reaction-bonded silicon nitride ceramic, which includes an array of sintered granules having fine pore channels in the sintered granules and coarse pore channels formed between the sintered granules, and in which the pore channel size is controlled so that both coarse pores and fine pores are formed together in the ceramic, thus simultaneously enhancing air permeability and capturing efficiency. A method of manufacturing the porous sintered reaction-bonded silicon nitride ceramic is also provided.