Patents by Inventor Young Jong Ki

Young Jong Ki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240180233
    Abstract: Disclosed is an aerosol-generating article comprising: a first portion including a plurality of crimped pieces of paper impregnated with an aerosol-generating element; a second portion including a tobacco element; a third portion including a cooling element; and a fourth portion including a filter element, wherein the first portion, the second portion, the third portion, and the fourth portion are sequentially arranged along a longitudinal direction of the aerosol-generating article.
    Type: Application
    Filed: January 3, 2022
    Publication date: June 6, 2024
    Applicant: KT&G CORPORATION
    Inventors: Sung Jong KI, Young Joong KIM, John Tae LEE, Sung Je CHA
  • Patent number: 11998038
    Abstract: A method of manufacturing an aerosol generating rod includes providing a sheet of a first non-tobacco material by using at least one first conveying roller; crimping the sheet of the first non-tobacco material by using a first crimping device; applying an aerosol generating material to at least one surface of the sheet of the first non-tobacco material by using a first spray nozzle; applying a liquid containing a tobacco component to at least one surface of the sheet of the first non-tobacco material by using a slit nozzle; drying the sheet of the first non-tobacco material by using a drying device; and forming the aerosol generating rod by forming the sheet of the first non-tobacco material into a rod by using a rod forming device.
    Type: Grant
    Filed: September 16, 2020
    Date of Patent: June 4, 2024
    Assignee: KT&G CORPORATION
    Inventors: Eun Mi Jeoung, Sung Jong Ki, Min Kyu Kim, Young Joong Kim, In Su Park, John Tae Lee, Sun Hwan Jung
  • Patent number: 11980229
    Abstract: An aerosol generating system includes: a cavity configured to accommodate at least a portion of a cigarette; a first induction coil located around the cavity; a second induction coil located around the cavity and connected to the first induction coil in parallel; and a battery configured to supply an alternating current to the first induction coil and the second induction coil, wherein the first induction coil and the second induction coil have different resonant frequencies.
    Type: Grant
    Filed: June 24, 2020
    Date of Patent: May 14, 2024
    Assignee: KT&G CORPORATION
    Inventors: In Su Park, Sung Jong Ki, Young Joong Kim, Jang Won Seo, John Tae Lee, Sun Hwan Jung, Eun Mi Jeoung
  • Patent number: 11974600
    Abstract: An aerosol generating device includes a first vaporizer configured to generate a first aerosol by heating a first liquid composition, a second vaporizer configured to generate a second aerosol by heating a second liquid composition, and a controller controlling power supplied to the first vaporizer and the second vaporizer, based on a first mode, in which a smokeless aerosol is generated, and a second mode, in which a transport amount of nicotine included in the second liquid composition is adjusted.
    Type: Grant
    Filed: December 16, 2020
    Date of Patent: May 7, 2024
    Assignee: KT&G CORPORATION
    Inventors: In Su Park, Sung Jong Ki, Young Joong Kim, John Tae Lee, Sun Hwan Jung, Eun Mi Jeoung
  • Patent number: 6444518
    Abstract: A method of manufacturing a device separation film in a semiconductor device is disclosed. In a process technology in which a trench is formed in a silicon substrate, silicon is grown at the bottom of the trench by SEG method in order to lower the aspect ratio and the trench is then filled with an insulating material so that voids are not generated. In order for silicon to be normally grown, a thermal oxide film formed at the bottom of the trench must be removed without removing the oxide film from the sides of the trench. The disclosed method reduces the speed of forming a thermal oxide film at the bottom of the trench, by plasma process using CF4 and O2 gas after forming the trench. Thereby facilitating the removal of the thermal oxide film at the bottom of the trench while minimizing loss of the thermal oxide film at the sidewall of the trench.
    Type: Grant
    Filed: June 13, 2001
    Date of Patent: September 3, 2002
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Min Sik Jang, Young Jong Ki
  • Publication number: 20020000610
    Abstract: A method of manufacturing a device separation film in a semiconductor device is disclosed. In a process technology in which a trench is formed in a silicon substrate, silicon is grown at the bottom of the trench by SEG method in order to lower the aspect ratio and the trench is then filled with an insulating material so that voids are not generated. In order for silicon to be normally grown, a thermal oxide film formed at the bottom of the trench must be removed without removing the oxide film from the sides of the trench. The disclosed method reduces the speed of forming a thermal oxide film at the bottom of the trench, by plasma process using CF4 and O2 gas after forming the trench. Thereby facilitating the removal of the thermal oxide film at the bottom of the trench while minimizing loss of the thermal oxide film at the sidewall of the trench.
    Type: Application
    Filed: June 13, 2001
    Publication date: January 3, 2002
    Inventors: Min Sik Jang, Young Jong Ki