Patents by Inventor Young Joseph Paik

Young Joseph Paik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Feedforward and feedback control for conditioning of chemical mechanical polishing pad
    Patent number: 7413986
    Abstract: A method, apparatus and medium of conditioning a planarizing surface includes installing a wafer to be polished in a chemical mechanical polishing (CMP) apparatus having a polishing pad and a conditioning disk, polishing the wafer under a first set of pad conditioning parameters selected to maintain wafer material removal rates with preselected minimum and maximum removal rates, determining a wafer material removal rate occurring during the polishing step, calculating updated pad conditioning parameters to maintain wafer material removal rates within the maximum and minimum removal rates, and conditioning the polishing pad using the updated pad conditioning parameters, wherein the updated pad conditioning parameters are calculated using a pad wear and conditioning model that predicts the wafer material removal rate of the polishing pad based upon pad conditioning parameters, such as the conditioning down force and rotational speed of the conditioning disk.
    Type: Grant
    Filed: September 6, 2005
    Date of Patent: August 19, 2008
    Assignee: Applied Materials, Inc.
    Inventor: Young Joseph Paik
  • Feedforward and feedback control for conditioning of chemical mechanical polishing pad
    Patent number: 7101799
    Abstract: A method, apparatus and medium of conditioning a planarizing surface includes installing a wafer to be polished in a chemical mechanical polishing (CMP) apparatus having a polishing pad and a conditioning disk, polishing the wafer under a first set of pad conditioning parameters selected to maintain wafer material removal rates with preselected minimum and maximum removal rates, determining a wafer material removal rate occurring during the polishing step, calculating updated pad conditioning parameters to maintain wafer material removal rates within the maximum and minimum removal rates, and conditioning the polishing pad using the updated pad conditioning parameters, wherein the updated pad conditioning parameters are calculated using a pad wear and conditioning model that predicts the wafer material removal rate of the polishing pad based upon pad conditioning parameters, such as the conditioning down force and rotational speed of the conditioning disk.
    Type: Grant
    Filed: November 30, 2001
    Date of Patent: September 5, 2006
    Assignee: Applied Materials, Inc.
    Inventor: Young Joseph Paik
  • Control of chemical mechanical polishing pad conditioner directional velocity to improve pad life
    Patent number: 7040956
    Abstract: A method, apparatus and medium of conditioning a planarizing surface includes installing a wafer to be polished in a chemical mechanical polishing (CMP) apparatus having a polishing pad and a conditioning disk, polishing the wafer under a first set of pad conditioning parameters selected to maintain wafer material removal rates with preselected minimum and maximum removal rates, determining a wafer material removal rate occurring during the polishing step, calculating updated pad conditioning parameters to maintain wafer material removal rates within the maximum and minimum removal rates, and conditioning the polishing pad using the updated pad conditioning parameters, wherein the updated pad conditioning parameters are calculated by a pad wear and conditioning model that predicts the wafer material removal rate of the polishing pad based upon the rotational speed and direction of the conditioning disk.
    Type: Grant
    Filed: April 29, 2005
    Date of Patent: May 9, 2006
    Assignee: Applied Materials, Inc.
    Inventor: Young Joseph Paik
  • Control of chemical mechanical polishing pad conditioner directional velocity to improve pad life
    Patent number: 6910947
    Abstract: A method, apparatus and medium of conditioning a planarizing surface includes installing a wafer to be polished in a chemical mechanical polishing (CMP) apparatus having a polishing pad and a conditioning disk, polishing the wafer under a first set of pad conditioning parameters selected to maintain wafer material removal rates with preselected minimum and maximum removal rates, determining a wafer material removal rate occurring during the polishing step, calculating updated pad conditioning parameters to maintain wafer material removal rates within the maximum and minimum removal rates, and conditioning the polishing pad using the updated pad conditioning parameters, wherein the updated pad conditioning parameters are calculated by a pad wear and conditioning model that predicts the wafer material removal rate of the polishing pad based upon the rotational speed and direction of the conditioning disk.
    Type: Grant
    Filed: November 30, 2001
    Date of Patent: June 28, 2005
    Assignee: Applied Materials, Inc.
    Inventor: Young Joseph Paik
  • Feedforward and feedback control for conditioning of chemical mechanical polishing pad
    Publication number: 20030027424
    Abstract: A method, apparatus and medium of conditioning a planarizing surface includes installing a wafer to be polished in a chemical mechanical polishing (CMP) apparatus having a polishing pad and a conditioning disk, polishing the wafer under a first set of pad conditioning parameters selected to maintain wafer material removal rates with preselected minimum and maximum removal rates, determining a wafer material removal rate occurring during the polishing step, calculating updated pad conditioning parameters to maintain wafer material removal rates within the maximum and minimum removal rates, and conditioning the polishing pad using the updated pad conditioning parameters, wherein the updated pad conditioning parameters are calculated using a pad wear and conditioning model that predicts the wafer material removal rate of the polishing pad based upon pad conditioning parameters, such as the conditioning down force and rotational speed of the conditioning disk.
    Type: Application
    Filed: November 30, 2001
    Publication date: February 6, 2003
    Inventor: Young Joseph Paik
  • Control of chemical mechanical polishing pad conditioner directional velocity to improve pad life
    Publication number: 20020197934
    Abstract: A method, apparatus and medium of conditioning a planarizing surface includes installing a wafer to be polished in a chemical mechanical polishing (CMP) apparatus having a polishing pad and a conditioning disk, polishing the wafer under a first set of pad conditioning parameters selected to maintain wafer material removal rates with preselected minimum and maximum removal rates, determining a wafer material removal rate occurring during the polishing step, calculating updated pad conditioning parameters to maintain wafer material removal rates within the maximum and minimum removal rates, and conditioning the polishing pad using the updated pad conditioning parameters, wherein the updated pad conditioning parameters are calculated by a pad wear and conditioning model that predicts the wafer material removal rate of the polishing pad based upon the rotational speed and direction of the conditioning disk.
    Type: Application
    Filed: November 30, 2001
    Publication date: December 26, 2002
    Inventor: Young Joseph Paik