Abstract: An apparatus for controlling a discharge pressure of a fluid includes: a pump configured to suck the fluid through an inlet or to discharge the sucked fluid through an outlet; a distributor connected to the pump and to an injection nozzle provided by a sensor and configured to distribute the fluid discharged from the pump to the sensor; and a controller. The controller is configured to control the pump to operate selectively in accordance with detection of contamination of the sensor and to control operation of the distributor to be forcibly delayed during operation of the pump such that the fluid distributed to the sensor, when detected as being contaminated, is controlled to reach a selected required discharge pressure of different required discharge pressures selected in accordance with water amount information and a degree of contamination of the sensor.

Abstract: An optical path control member according to an embodiment comprises: a first substrate; a first electrode arranged on the upper surface of the first substrate; a second substrate arranged on top of the first substrate; a second electrode arranged on the lower surface of the second substrate; and an optical conversion unit which is arranged between the first electrode and the second electrode and which defines a first direction and a second direction, wherein the optical conversion unit comprises a partition part and an accommodation part that are alternately arranged in the first direction, the accommodation part includes a plurality of cells arranged to be spaced in the second direction, at least one of the cells includes a first inner side surface and a second inner side surface that are connected to each other, and the first inner side surface and/or the second inner side surface extends in a direction other than the first and second directions.

Abstract: A semiconductor device connected by an anisotropic conductive film, the anisotropic conductive film having a differential scanning calorimeter onset temperature of 60° C. to 85° C., and a elastic modulus change of 30% or less, as calculated by Equation 1, below, Elastic modulus change(%)={(M1?M0)/M0}×100??[Equation 1] wherein M0 is an initial elastic modulus in kgf/cm2 of the anisotropic conductive film as measured at 25° C., and M1 is a elastic modulus in kgf/cm2 of the anisotropic conductive film as measured at 25° C. after the film is left at 25° C. for 170 hours.

Abstract: A semiconductor device connected by an anisotropic conductive film, the anisotropic conductive film including a polyurethane resin; at least one other resin selected from the group of an ethylene-vinyl acetate copolymer resin, an acrylonitrile resin, and a styrene resin; isobornyl acrylate; and conductive particles.

Abstract: A semiconductor device connected by an anisotropic conductive film. The anisotropic conductive film includes a composition for an anisotropic conductive film including a first epoxy resin having an exothermic peak temperature of about 80° C. to about 110° C. and a second epoxy resin having an exothermic peak temperature of 120° C. to 200° C., as measured by differential scanning calorimetry (DSC). The first epoxy resin and the second epoxy resin are present in combined amount of about 30 wt % to about 50 wt % based on a total weight of the composition in terms of solid content. The second epoxy resin is present in an amount of about 60 to about 90 parts by weight based on 100 parts by weight of the first and second epoxy resins.

Abstract: Provided is a semiconductor device, including an anisotropic conductive film connecting the semiconductor device, the anisotropic conductive film having a maximum stress of 0.4 kgf/mm2 or more; and a stress-strain curve having a slope (A) of greater than 0 and less than or equal to 0.2 kgf/(mm2·%) as represented by the following equation 1: slope(A)=(½Smax?S0)/x??(1), wherein: Smax=maximum stress, x=strain (%) at half (½) of the maximum stress, and S0=stress at a strain of 0.

Abstract: A semiconductor device connected using an anisotropic conductive adhesive composition, the anisotropic conductive adhesive composition including a thermosetting polymerization initiator; and tetrahydrofurfuryl (meth)acrylate or furfuryl (meth)acrylate, wherein the tetrahydrofurfuryl (meth)acrylate or furfuryl (meth)acrylate is present in the composition in an amount of 1 wt % to 25 wt %, based on the total weight of the composition in terms of solid content.

Abstract: A semiconductor device connected by an anisotropic conductive film including a first insulation layer, a conductive layer, and a second insulation layer one above another, wherein the conductive layer has an expansion length of 20% or less in a width direction thereof, and the second insulation layer has an expansion length of 50% or more in a width direction thereof, the expansion length is calculated according to Equation 1, below, after glass substrates are placed on upper and lower sides of the anisotropic conductive film respectively, followed by compression at 110° C. to 200° C. for 3 to 7 seconds under a load of 1 MPa to 7 MPa per unit area of a sample, Increased ratio of expansion length (%)=[(length of corresponding layer in width direction after compression?length of corresponding layer in width direction before compression)/length of corresponding layer in width direction before compression]×100.

Abstract: A semiconductor device is bonded by an anisotropic conductive film composition. The anisotropic conductive film composition includes an ethylene-vinyl acetate copolymer, a polyurethane resin, and organic fine particles. The anisotropic conductive film composition has a melt viscosity of about 2,000 to about 8,000 Pa·s at 80° C.

Abstract: A semiconductor device connected by an anisotropic conductive film, the anisotropic conductive film having a differential scanning calorimeter onset temperature of 60° C. to 85° C., and a elastic modulus change of 30% or less, as calculated by Equation 1, below, Elastic modulus change(%)={(M1?M0)/M0}×100??[Equation 1] wherein M0 is an initial elastic modulus in kgf/cm2 of the anisotropic conductive film as measured at 25° C., and M1 is a elastic modulus in kgf/cm2 of the anisotropic conductive film as measured at 25° C. after the film is left at 25° C. for 170 hours.

Abstract: A semiconductor device connected by an anisotropic conductive film, the film having a storage modulus of 100 MPa to 300 MPa at 40° C. after curing of the film, and a peak point of 80° C. to 90° C. in a DSC (Differential Scanning calorimeter) profile of the film.

Abstract: A semiconductor device connected by an anisotropic conductive film. The anisotropic conductive film includes a composition for an anisotropic conductive film including a first epoxy resin having an exothermic peak temperature of about 80° C. to about 110° C. and a second epoxy resin having an exothermic peak temperature of 120° C. to 200° C., as measured by differential scanning calorimetry (DSC). The first epoxy resin and the second epoxy resin are present in combined amount of about 30 wt % to about 50 wt % based on a total weight of the composition in terms of solid content. The second epoxy resin is present in an amount of about 60 to about 90 parts by weight based on 100 parts by weight of the first and second epoxy resins.

Abstract: Provided is a semiconductor device, including an anisotropic conductive film connecting the semiconductor device, the anisotropic conductive film having a maximum stress of 0.4 kgf/mm2 or more; and a stress-strain curve having a slope (A) of greater than 0 and less than or equal to 0.2 kgf/(mm2·%) as represented by the following equation 1: slope(A)=(½Smax?S0)/x??(1), wherein: Smax=maximum stress, x=strain (%) at half (½) of the maximum stress, and S0=stress at a strain of 0.

Abstract: A semiconductor device connected by an anisotropic conductive film including a first insulation layer, a conductive layer, and a second insulation layer one above another, wherein the conductive layer has an expansion length of 20% or less in a width direction thereof, and the second insulation layer has an expansion length of 50% or more in a width direction thereof, the expansion length is calculated according to Equation 1, below, after glass substrates are placed on upper and lower sides of the anisotropic conductive film respectively, followed by compression at 110° C. to 200° C. for 3 to 7 seconds under a load of 1 MPa to 7 MPa per unit area of a sample, Increased ratio of expansion length(%)=[(length of corresponding layer in width direction after compression?length of corresponding layer in width direction before compression)/length of corresponding layer in width direction before compression]×100.

Abstract: A semiconductor device connected by an anisotropic conductive film, the film having a storage modulus of 100 MPa to 300 MPa at 40° C. after curing of the film, and a peak point of 80° C. to 90° C. in a DSC (Differential Scanning calorimeter) profile of the film.

Abstract: A semiconductor device connected by an anisotropic conductive film, the anisotropic conductive film including a polyurethane resin; at least one other resin selected from the group of an ethylene-vinyl acetate copolymer resin, an acrylonitrile resin, and a styrene resin; isobornyl acrylate; and conductive particles.

Abstract: A semiconductor device connected using an anisotropic conductive adhesive composition, the anisotropic conductive adhesive composition including a thermosetting polymerization initiator; and tetrahydrofurfuryl (meth)acrylate or furfuryl (meth)acrylate, wherein the tetrahydrofurfuryl (meth)acrylate or furfuryl (meth)acrylate is present in the composition in an amount of 1 wt % to 25 wt %, based on the total weight of the composition in terms of solid content.

Abstract: A semiconductor device is bonded by an anisotropic conductive film composition. The anisotropic conductive film composition includes an ethylene-vinyl acetate copolymer, a polyurethane resin, and organic fine particles. The anisotropic conductive film composition has a melt viscosity of about 2,000 to about 8,000 Pa·s at 80° C.