Abstract: The present invention relates to a composition for an encapsulant film, including an ethylene/alpha-olefin copolymer having high volume resistance and light transmittance, and an encapsulant film using the same.

Abstract: The present invention relates to an ethylene/alpha-olefin copolymer having a high weight average molecular weight and narrow molecular weight distribution, and at the same time, a reduced characteristic relaxation time, thereby showing excellent physical properties, and a method for preparing the same. A resin composition having improved volume resistance and excellent light transmittance may be prepared by using such ethylene/alpha-olefin copolymer. Accordingly, the ethylene/alpha-olefin copolymer may be utilized in various uses in electrical and electronic industrial fields.

Abstract: There are provided a variable resistance memory device and an operating method thereof. In a method for operating a variable resistance memory device, the method includes programming multi-bit data in a multi-bit variable resistance memory cell of the variable resistance memory device, wherein the programming includes: generating sequentially increased program voltage pulses, based on the multi-bit data; and applying the program voltage pulses to the multi-bit variable resistance memory cell, wherein a current-voltage curve of the multi-bit variable resistance memory cell exhibits a self-compliance characteristic, wherein the program voltage pulses are included in a voltage section having the self-compliance characteristic.

Abstract: There are provided a variable resistance memory device and an operating method thereof. In a method for operating a variable resistance memory device, the method includes programming multi-bit data in a multi-bit variable resistance memory cell of the variable resistance memory device, wherein the programming includes: generating sequentially increased program voltage pulses, based on the multi-bit data; and applying the program voltage pulses to the multi-bit variable resistance memory cell, wherein a current-voltage curve of the multi-bit variable resistance memory cell exhibits a self-compliance characteristic, wherein the program voltage pulses are included in a voltage section having the self-compliance characteristic.

Abstract: Disclosed herein is a novel strontium precursor containing a beta-diketonate compound. Being superior in thermal stability and volatility, the strontium precursor can form a quality strontium thin film.

Abstract: Disclosed herein is a novel strontium precursor containing a beta-diketonate compound. Being superior in thermal stability and volatility, the strontium precursor can form a quality strontium thin film.

Abstract: The present invention relates to a graphene pattern forming method using a delamination technique employing a polymer stamp. The technique is adequate for forming a graphene pattern having a an arbitrary target pattern. According to the present invention, a portion of a graphene layer formed on a substrate is physically and selectively delaminated using the polymer stamp to simply and easily form a desired graphene pattern having a uniform line width on the substrate. Also, a portion of the graphene layer formed on the substrate is physically and selectively delaminated in a roll-to-roll manner using a rotating body stamp or by using a stamp having a large area to simply and easily form a desired graphene pattern having a uniform line width on the a substrate having a large area.

Abstract: Disclosed is a source material supplying unit for a thin film depositing apparatus, arranged in a chamber for the thin film deposition apparatus and supplying an evaporation material to an injector for injecting the evaporation material, the source material supplying unit including: a container body which is internally formed with a storage space where the evaporation material is stored, and includes a discharging hole formed at one side thereof connected to the injector via a connection line; a transfer member which includes a piston body inserted in the storage space of the container body movably along a straight line, two or more seating members formed with a seating portion on an outer circumferential surface and arranged on an outside surface of the piston body, and at least two contact rings assembled to the seating portion of the seating member and closely contacting the inner circumferential surface of the storage space of the container body; and a pressing member which applies pressure to the transfe

Abstract: The present invention relates to novel tin amino-alkoxide complexes and a method for preparing the same, precisely novel tin amino-alkoxide complexes represented by formula 1 and useful as a precursor for tin and tin oxide thin films and a precursor for the production of nano-sized tin and tin oxide particles and a method for preparing the same. In formula 1, A is linear or branched (C2-C10) alkylene substituted or not substituted with halogen; R1 and R2 are independently linear or branched (C1-C7) alkyl substituted or not substituted with halogen.

Abstract: Disclosed herein is a method of depositing a nanolaminate film for next-generation non-volatile floating gate memory devices by atomic layer deposition. The method includes the steps of: introducing a substrate into an atomic layer deposition reactor; forming on the substrate a first high-dielectric-constant layer by alternately supplying an oxygen source and a metal source selected from among an aluminum source, a zirconium source and a hafnium source; forming on the first high-dielectric-constant layer a nickel oxide layer by alternately supplying a nickel source and an oxygen source; and forming on the nickel oxide layer a second high-dielectric-constant layer by alternately supplying an oxygen source and a metal source selected from among an aluminum source, a zirconium source and a hafnium source.

Abstract: The present invention relates to novel tin amino-alkoxide complexes and a method for preparing the same, precisely novel tin amino-alkoxide complexes represented by formula 1 and useful as a precursor for tin and tin oxide thin films and a precursor for the production of nano-sized tin and tin oxide particles and a method for preparing the same. In formula 1, A is linear or branched (C2-C10) alkylene substituted or not substituted with halogen; R1 and R2 are independently linear or branched (C1-C7) alkyl substituted or not substituted with halogen.

Abstract: A volatile nickel aminoalkoxide complex of formula (I) can form a nickel thin film having an improved quality by metal organic chemical vapor deposition (MOCVD).

Abstract: A volatile nickel aminoalkoxide complex of formula (I) can form a nickel thin film having an improved quality by metal organic chemical vapor deposition (MOCVD).

Abstract: Disclosed herein is a method of depositing a nanolaminate film for next-generation non-volatile floating gate memory devices by atomic layer deposition. The method includes the steps of: introducing a substrate into an atomic layer deposition reactor; forming on the substrate a first high-dielectric-constant layer by alternately supplying an oxygen source and a metal source selected from among an aluminum source, a zirconium source and a hafnium source; forming on the first high-dielectric-constant layer a nickel oxide layer by alternately supplying a nickel source and an oxygen source; and forming on the nickel oxide layer a second high-dielectric-constant layer by alternately supplying an oxygen source and a metal source selected from among an aluminum source, a zirconium source and a hafnium source.