Abstract: A method for manufacturing a dry electrode for a secondary battery, includes the steps of: mixing active materials and binders to make a mixture and putting the mixture to a screw mixer; rotating the screw mixer to move the mixture forward and allowing the mixture to be primarily heated and melted; rotating the screw mixer to move the heated and melted mixture forward and allowing the mixture to be agitated; rotating the screw mixer to move the agitated mixture forward and allowing the mixture to be secondarily heated and agitated; rotating the screw mixer to pressurize the secondarily heated and agitated mixture forward and allowing the mixture to move to the end of a nozzle; allowing the mixture discharged to the form of a film through the nozzle to be compressed through rollers; and attaching the film to a metal foil to manufacture the dry electrode.

Abstract: A memory system including a memory controller with channel interfaces connecting memory groups via channels. Each channel interface communicates control, address and/or data (CAD) signals to a channel-connected memory group synchronously with a slave clock derived from an input clock. The various slave clocks being uniquely generated by application of channel interface specific phase/frequency modulation or temporal delay, such that the respective CAD signals are characterized by skewed transition timing.

Abstract: A memory system including a memory controller with channel interfaces connecting memory groups via channels. Each channel interface communicates control, address and/or data (CAD) signals to a channel-connected memory group synchronously with a slave clock derived from an input clock. The various slave clocks being uniquely generated by application of channel interface specific phase/frequency modulation or temporal delay, such that the respective CAD signals are characterized by skewed transition timing.

Abstract: A memory system including a memory controller with channel interfaces connecting memory groups via channels. Each channel interface communicates control, address and/or data (CAD) signals to a channel-connected memory group synchronously with a slave clock derived from an input clock. The various slave clocks being uniquely generated by application of channel interface specific phase/frequency modulation or temporal delay, such that the respective CAD signals are characterized by skewed transition timing.

Abstract: A memory controller configured to control a memory device including a plurality of banks. The memory controller may determine whether a number of write commands enqueued in a command queue of the memory controller exceeds a reference value, calculate a level of write power to be consumed by the memory device in response to at least some of the write commands from among the enqueued write commands when the number of enqueued write commands exceeds the reference value, and schedule, based on the calculated level of write power, interleaving commands executing an interleaving operation of the memory device, from among the enqueued write commands.

Abstract: A memory controller configured to control a memory device including a plurality of banks. The memory controller may determine whether a number of write commands enqueued in a command queue of the memory controller exceeds a reference value, calculate a level of write power to be consumed by the memory device in response to at least some of the write commands from among the enqueued write commands when the number of enqueued write commands exceeds the reference value, and schedule, based on the calculated level of write power, interleaving commands executing an interleaving operation of the memory device, from among the enqueued write commands.

Abstract: Provided are a memory device and a memory system including the same. The memory device may include a first memory rank including at least one first memory chip, a memory controller configured to provide a command to the first memory rank, at least one data buffer configured to buffer data input to the at least one first memory chip or being output from the at least one first memory chip, and a second memory rank connected to the first memory rank and comprising at least one second memory chip. The first memory rank may provide training data and a data strobe signal to the second memory rank based on a data training command from the memory controller without the training data and the data strobe signal passing through the data buffer. The second memory rank may determine a delay of the data strobe signal based on the training data being detected by the second memory rank.

Abstract: A memory system including a memory controller with channel interfaces connecting memory groups via channels. Each channel interface communicates control, address and/or data (CAD) signals to a channel-connected memory group synchronously with a slave clock derived from an input clock. The various slave clocks being uniquely generated by application of channel interface specific phase/frequency modulation or temporal delay, such that the respective CAD signals are characterized by skewed transition timing.

Abstract: A memory system including a memory controller with channel interfaces connecting memory groups via channels. Each channel interface communicates control, address and/or data (CAD) signals to a channel-connected memory group synchronously with a slave clock derived from an input clock. The various slave clocks being uniquely generated by application of channel interface specific phase/frequency modulation or temporal delay, such that the respective CAD signals are characterized by skewed transition timing.

Abstract: Provided are a memory device and a memory system including the same. The memory device may include a first memory rank including at least one first memory chip, a memory controller configured to provide a command to the first memory rank, at least one data buffer configured to buffer data input to the at least one first memory chip or being output from the at least one first memory chip, and a second memory rank connected to the first memory rank and comprising at least one second memory chip. The first memory rank may provide training data and a data strobe signal to the second memory rank based on a data training command from the memory controller without the training data and the data strobe signal passing through the data buffer. The second memory rank may determine a delay of the data strobe signal based on the training data being detected by the second memory rank.

Abstract: A method for manufacturing a memory device includes detecting, with a tester, whether memory cells included in a memory device are defective, and programming, with the tester, start addresses of defect-free memory regions for addressing modes of the memory device based on a result of the detection.

Abstract: A memory system including a memory controller with channel interfaces connecting memory groups via channels. Each channel interface communicates control, address and/or data (CAD) signals to a channel-connected memory group synchronously with a slave clock derived from an input clock. The various slave clocks being uniquely generated by application of channel interface specific phase/frequency modulation or temporal delay, such that the respective CAD signals are characterized by skewed transition timing.

Abstract: A method for manufacturing a memory device includes detecting, with a tester, whether memory cells included in a memory device are defective, and programming, with the tester, start addresses of defect-free memory regions for addressing modes of the memory device based on a result of the detection.

Abstract: A computing system includes a first unified module including a first storage device and a second storage device that are different from each other, and a unified module interface configured to provide a direct memory access (DMA) request signal to control a first DMA with respect to the first storage device and to perform a second DMA on the second storage device. An application processor is configured to receive the DMA request signal from the unified module interface, and provide a DMA request response signal to the unified module interface and control the second DMA with respect to the second storage device.

Abstract: A nonvolatile memory device comprises a memory controller having a memory cell status estimator that generates status estimation information indicating the status of a memory cell based on status register data, a coupling group index selector configured to generate a select signal for selecting a page and coupling group index from the status estimation information, and a memory cell status value generator configured to map the status estimation information to the data reliability decision bits and the coupling group index and generate a status value of the memory cell for error correction code decoding.

Abstract: A nonvolatile memory device comprises a memory controller having a memory cell status estimator that generates status estimation information indicating the status of a memory cell based on status register data, a coupling group index selector configured to generate a select signal for selecting a page and coupling group index from the status estimation information, and a memory cell status value generator configured to map the status estimation information to the data reliability decision bits and the coupling group index and generate a status value of the memory cell for error correction code decoding.