Abstract: An ethylene/alpha-olefin copolymer having excellent physical properties showing reduced immersion time of a crosslinking agent and a high degree of crosslinking, and a composition for an encapsulant film, comprising the same, is described herein.

Abstract: Provided are an apparatus for producing inorganic powder, and a method of producing inorganic powder by using such. The apparatus includes a vaporization part where a condensed-phase precursor is vaporized to obtain a gas-phase precursor, a partial precipitation part where the gas-phase precursor obtained in the vaporization part is partially precipitated to a condensed phase, and a reaction part where the gas-phase precursor remaining after being partially precipitated to a condensed phase in the partial precipitation part reacts with a reaction gas to obtain inorganic powder. An equilibrium vapor pressure of the gas-phase precursor in the partial precipitation part is lower than a vapor pressure of the gas-phase precursor obtained in the vaporization part, and an equilibrium vapor pressure of the precursor in the reaction part is equal to or higher than a vapor pressure of the gas-phase precursor partially precipitated to a condensed phase in the partial precipitation part.

Abstract: Provided is a method of producing a nickel nanopowder, the method capable of preventing coagulation between particles and, accordingly, providing a nickel nanopowder having a small average particle size and a low coagulation rate. According to an embodiment of the present invention, the method of producing a nickel nanopowder includes providing a nickel salt and a shell-forming material; nucleating and growing nickel core particles from the nickel salt; forming a shell layer on surfaces of the nickel core particles using the shell-forming material; and removing the shell layer to form the nickel nanopowder.

Abstract: Provided are an apparatus for producing inorganic powder, and a method of producing inorganic powder by using such. The apparatus includes a vaporization part where a condensed-phase precursor is vaporized to obtain a gas-phase precursor, a partial precipitation part where the gas-phase precursor obtained in the vaporization part is partially precipitated to a condensed phase, and a reaction part where the gas-phase precursor remaining after being partially precipitated to a condensed phase in the partial precipitation part reacts with a reaction gas to obtain inorganic powder. An equilibrium vapor pressure of the gas-phase precursor in the partial precipitation part is lower than a vapor pressure of the gas-phase precursor obtained in the vaporization part, and an equilibrium vapor pressure of the precursor in the reaction part is equal to or higher than a vapor pressure of the gas-phase precursor partially precipitated to a condensed phase in the partial precipitation part.

Abstract: Provided are an apparatus for producing inorganic powder, and a method of producing inorganic powder by using such. The apparatus includes a vaporization part where a condensed-phase precursor is vaporized to obtain a gas-phase precursor, a partial precipitation part where the gas-phase precursor obtained in the vaporization part is partially precipitated to a condensed phase, and a reaction part where the gas-phase precursor remaining after being partially precipitated to a condensed phase in the partial precipitation part reacts with a reaction gas to obtain inorganic powder. An equilibrium vapor pressure of the gas-phase precursor in the partial precipitation part is lower than a vapor pressure of the gas-phase precursor obtained in the vaporization part, and an equilibrium vapor pressure of the precursor in the reaction part is equal to or higher than a vapor pressure of the gas-phase precursor partially precipitated to a condensed phase in the partial precipitation part.

Abstract: An embodiment provides a semiconductor device comprising: a substrate; a semiconductor structure disposed on the substrate and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an activation layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a bonding layer disposed between the semiconductor structure and the substrate; a cover layer disposed between the bonding layer and the semiconductor structure; and an electrode pad disposed on the cover layer and spaced apart from the semiconductor structure, wherein: the semiconductor structure further comprises a stepped portion at which the lateral surface of the second conductive semiconductor layer, the lateral surface of the activation layer, and the lower surface of the first conductive semiconductor layer are exposed; the stepped portion is disposed at the outer portion of the semiconductor structure; and the cover layer is disposed to extend from a region ve

Abstract: An embodiment relates to a light emitting module, a flash module, and a terminal including the same. The light emitting module according to an embodiment comprises: a semiconductor layer; a phosphor layer arranged on one surface of the semiconductor layer; a plurality of light emitting chips including a plurality of electrodes arranged on a surface facing one surface of the semiconductor layer; a first partition arranged at one side of the plurality of light emitting chips, and a second partition arranged at the other side of the plurality of light emitting chips so as to face the first partition; and an opaque molding part, which encompasses the plurality of light emitting chips such that the upper surface of the phosphor layer and the bottom surfaces of the plurality of electrodes are exposed to the outside, and is arranged on the inner side of the first and second partitions.

Abstract: An embodiment relates to a light emitting module, a flash module, and a terminal including the same. The light emitting module according to an embodiment comprises: a semiconductor layer; a phosphor layer arranged on one surface of the semiconductor layer; a plurality of light emitting chips including a plurality of electrodes arranged on a surface facing one surface of the semiconductor layer; a first partition arranged at one side of the plurality of light emitting chips, and a second partition arranged at the other side of the plurality of light emitting chips so as to face the first partition; and an opaque molding part, which encompasses the plurality of light emitting chips such that the upper surface of the phosphor layer and the bottom surfaces of the plurality of electrodes are exposed to the outside, and is arranged on the inner side of the first and second partitions.

Abstract: Ferroelectric barium titanate (BaTiO3) epitaxial films grown by metal-organic chemical vapor deposition using a barium precursor having a low melting point and a stable vapor pressure.

Abstract: An embodiment provides a semiconductor device comprising: a substrate; a semiconductor structure disposed on the substrate and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an activation layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a bonding layer disposed between the semiconductor structure and the substrate; a cover layer disposed between the bonding layer and the semiconductor structure; and an electrode pad disposed on the cover layer and spaced apart from the semiconductor structure, wherein: the semiconductor structure further comprises a stepped portion at which the lateral surface of the second conductive semiconductor layer, the lateral surface of the activation layer, and the lower surface of the first conductive semiconductor layer are exposed; the stepped portion is disposed at the outer portion of the semiconductor structure; and the cover layer is disposed to extend from a region ve

Abstract: Ferroelectric barium titanate (BaTiO3) epitaxial films grown by metal-organic chemical vapor deposition using a barium precursor having a low melting point and a stable vapor pressure.

Abstract: Provided is a light emitting device. In one embodiment, a light emitting device including: a support member; a light emitting structure on the support member, the light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a protective member at a peripheral region of an upper surface of the support member; an electrode including an upper portion being on the first conductive type semiconductor layer, a side portion extended from the upper portion and being on a side surface of the light emitting structure, and an extended portion extended from the side portion and being on the protective member; and an insulation layer between the side surface of the light emitting structure and the electrode.

Abstract: A light emitting device is disclosed. The disclosed light emitting device includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer, a second electrode layer disposed beneath the light emitting structure and electrically connected to the second-conductivity-type semiconductor layer, a first electrode layer including a main electrode disposed beneath the second electrode layer, and at least one contact electrode branching from the main electrode and extending through the second electrode layer, the second-conductivity-type semiconductor layer and the active layer, to contact the first-conductivity-type semiconductor layer, and an insulating layer interposed between the first electrode layer and the second electrode layer and between the first electrode layer and the light emitting structure.

Abstract: Provided is a light emitting device. The light emitting device comprises: In one embodiment, a light emitting device includes: a light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and a conductive support member under the light emitting structure. The conductive support member comprises a first conductive support member and a second conductive support member. The second conductive support member has a thermal conductivity higher than that of the first conductive support member.

Abstract: A light emitting device is disclosed. The disclosed light emitting device includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer, a second electrode layer disposed beneath the light emitting structure and electrically connected to the second-conductivity-type semiconductor layer, a first electrode layer including a main electrode disposed beneath the second electrode layer, and at least one contact electrode branching from the main electrode and extending through the second electrode layer, the second-conductivity-type semiconductor layer and the active layer, to contact the first-conductivity-type semiconductor layer, and an insulating layer interposed between the first electrode layer and the second electrode layer and between the first electrode layer and the light emitting structure.

Abstract: Disclosed is a light emitting device. The light emitting device includes a light emitting structure layer including a first semiconductor layer, an active layer, and a second semiconductor layer, an electrode electrically connected to the first semiconductor layer, an electrode layer under the light emitting structure layer, and a conductive support member under the electrode layer. A channel layer is between the second semiconductor layer and the electrode layer. A protrusion projected from at least one of edges of the conductive support member includes and having a rough surface.

Abstract: A light emitting device is disclosed. The disclosed light emitting device includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer, a second electrode layer disposed beneath the light emitting structure and electrically connected to the second-conductivity-type semiconductor layer, a first electrode layer including a main electrode disposed beneath the second electrode layer, and at least one contact electrode branching from the main electrode and extending through the second electrode layer, the second-conductivity-type semiconductor layer and the active layer, to contact the first-conductivity-type semiconductor layer, and an insulating layer interposed between the first electrode layer and the second electrode layer and between the first electrode layer and the light emitting structure.

Abstract: Provided is a light emitting device. In one embodiment, a light emitting device including: a support member; a light emitting structure on the support member, the light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a protective member at a peripheral region of an upper surface of the support member; an electrode including an upper portion being on the first conductive type semiconductor layer, a side portion extended from the upper portion and being on a side surface of the light emitting structure, and an extended portion extended from the side portion and being on the protective member; and an insulation layer between the side surface of the light emitting structure and the electrode.

Abstract: Provided is a light emitting device. The light emitting device comprises: In one embodiment, a light emitting device includes: a light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and a conductive support member under the light emitting structure. The conductive support member comprises a first conductive support member and a second conductive support member. The second conductive support member has a thermal conductivity higher than that of the first conductive support member.

Abstract: Disclosed are a method of fabricating a light emitting device includes the steps of: forming a plurality of compound semiconductor layers on a substrate, the substrate including a plurality of chip regions and isolation region; selectively etching the compound semiconductor layers to form a light emitting structure on each chip region and form a buffer structure on the isolation region; forming a conductive support member on the light emitting structure and the buffer structure; removing the substrate by using a laser lift off process; and dividing the conductive support member into the a plurality of chips of the chip regions, wherein the buffer structure is spaced apart from the light emitting structure.