Abstract: Provided are a semiconductor chip package, a semiconductor package, and a method of fabricating the same. In some embodiments, the semiconductor chip packages includes a semiconductor chip including an active surface, a rear surface, and side surfaces, bump solder balls provided on bonding pads formed on the active surface, and a molding layer provided to cover the active surface and expose portions of the bump solder balls. The molding layer between adjacent bump solder balls may have a meniscus concave surface, where a height from the active surface to an edge of the meniscus concave surface contacting the bump solder ball is about a 1/7 length of the maximum diameter of a respective bump solder ball at below or above a section of the bump solder ball having the maximum diameter.

Abstract: In a semiconductor device, a package including the semiconductor device and a method of forming the same, the semiconductor device package includes a semiconductor device, a wiring board, and an underfill material layer. The semiconductor device includes a semiconductor chip, a metal layer, and solder balls for bump contacts. The semiconductor chip includes an active surface having bonding pads and a rear surface opposite the active surface and having concave portions corresponding to the bonding pads. The metal layer fills the concave portions and covers the rear surface. The solder balls for bump contacts are provided on the bonding pads. The wiring board includes an upper surface to which the semiconductor device is mounted and a lower surface opposite the upper surface. The underfill material layer fills a space between the active surface of the semiconductor device and the upper surface of the wiring board.

Abstract: According to an example embodiment, a method of fabricating an electronic device may include preparing a substrate with a first area and a second area. A metal interconnection may be formed on the substrate extending from the first area to the second area. An insulating layer may be formed on the substrate. A sacrificial pattern electrically connected to the metal interconnection and serving as a sacrificial anode for cathodic protection against corrosion of the metal interconnection may be formed on the second area. An opening to expose the metal interconnection on the first area may be formed by patterning the insulating layer. An electronic device fabricated by a method according to an example embodiment may include a substrate, a metal interconnection, an insulating layer, and/or a sacrificial pattern.

Abstract: Provided is a printed circuit board having a bump interconnection structure that improves reliability between interconnection layers. Also provided is a method of fabricating the printed circuit board and semiconductor package using the printed circuit board. According to one embodiment, the printed circuit board includes a plurality of bumps formed on a resin layer between a first interconnection layer and a second interconnection layer. The second interconnection layer includes insertion holes corresponding to upper portions of the bumps so that the upper portions of the bumps protrude from the second interconnection layer. The upper portion of at least one of the bumps includes a rivet portion having a diameter greater that the diameter of the corresponding insertion hole to reliably interconnect the first and second interconnection layers.

Abstract: A stack type semiconductor package, and a method of fabricating the same are provided. The stack type semiconductor package may include a lower unit package and an upper unit package. The lower unit package may include a substrate, and a semiconductor chip on an upper surface of the substrate. A bump may be on an upper surface of the substrate, and a protecting layer, covering the semiconductor chip, may be formed. The protecting layer may include a via hole partially exposing the bump. The upper unit package may be on the protecting layer, and may include an internal connection solder ball on a lower surface of the upper unit package. The internal connection solder ball may be inserted into the via hole and connected to the bump.

Abstract: A semiconductor package and a method of fabricating the same are provided. The semiconductor package includes a semiconductor chip and a circuit board. The semiconductor chip has a bond pad. The circuit board has a base substrate with a throughole, and a conductive film pattern placed on a sidewall of the throughole. The throughole is aligned with the bond pad to expose the bond pad. A connector located within the throughole electrically connects the conductive film pattern to the bond pad. A sealing layer covers the connector.