Abstract: The present invention relates to a phase shift mask for modifying blackout patterns at the peripheral sites of the mask, thereby capable of compensating the differences in the light intensity at the peripheral sites of the mask where the light intensity is relatively reduced after light has passed through the mask. The present invention enables the uniformity of critical dimension of the patterns in photoresist film, thus enhances the reliability and the yield of devices.

Abstract: A phase shift mask capable of preventing the formation of a ghost image caused by diffraction and interference of light with the phase of 0.degree. and light with the phase of 180.degree. meeting upon forming a pattern by use of the mask of the Half-tone type mask. The phase shift mask includes a photoresist film pattern having a light transmitting portion and a light shielding portion, a phase shift layer adapted to shift the phase of light passing through the light shielding portion of the photoresist film pattern, and an assistant pattern adapted to remove unnecessary components of a main waveform of the light, which components are formed due to the diffraction of light at opposite sides of the main light waveform, the assistant pattern being comprised of a light transmitting portion for shifting the phase of a light incident thereon to 0.degree..

Abstract: A phase shift mask capable of achieving a variation in phase at the boundary between a light transmitting film and a phase shift film and thereby preventing formation of an undesirable pattern, and a method for fabricating the phase shift mask. The phase shifter has an inclined edge portion disposed at a boundary between the light transmitting film and the light shielding film. The method includes the steps of implanting impurity ions in the phase shifter and etching the phase shifter in a manner that the phase shifter is formed with an inclined edge portion at the boundary between the light transmitting film and the light shielding film.

Abstract: A phase shift mask and a manufacturing method thereof are disclosed. To overcome problem that a photoresist film at an area unexposed to the light is removed by a certain thickness when the conventional half-tone phase shift mask is used for the formation of a photoresist film pattern, the phase shift mask comprises: a lower non-transmissionable film and a phase shift film laminated on a predetermined area unexposed to the light on a transparent substrate, the lower non-transmissionable film having a predetermined light-transmission degree; and an upper non-transmissionable film formed on the phase shift film.

Abstract: A method for forming contact holes, capable of achieving an increased tolerance in design rule for formation of contact holes by: forming an insulating film over a semiconductor substrate; coating a positive photoresist film over the insulating film; primarily exposing the photoresist film to a light using a first exposure mask having windows adapted to allow portions of the insulating film corresponding to a part of contact holes to be exposed to the light, the part of contact holes having contact holes arranged diagonally to each other; secondarily exposing the photoresist film to the light using a second exposure mask having windows arranged diagonally to each other and not overlapped with those of the first exposure mask; removing the light-exposed portions of the photoresist film to form a photoresist film pattern for exposing portions of the insulating film respectively corresponding to the contact holes; and forming the contact holes using the photoresist film pattern as a mask.

Abstract: A method is disclosed for the fabrication of a phase shift mask comprising the steps of: forming chrome patterns on a transparent substrate; coating a phase shift layer and a negative photosensitive film on the entire area of the resulting structure, in sequence; exposing the photosensitive film to a light incident from the backside of the transparent substrate with the chrome patterns serving as a mask and developing the illuminated area of the photosensitive film, to form photosensitive film patterns; etching the phase shift layer to form phase shift patterns which are each positioned between the chrome patterns, with the photosensitive film patterns serving as a mask; subjecting the chrome patterns to wet etching, to conduct etching at the upper surface and the opposite edges of the chrome patterns so that each of the chrome patterns are spaced from each of the phase shift patterns; and removing the photosensitive film patterns with the transparent substrate exposed through the spaces between the etched ch

Abstract: A phase shift mask and a method for fabrication of a phase shift mask provided with a groove formed by etching to a predetermined depth a portion of a transparent substrate on which an edge portion of a phase shift film pattern directly coated on the transparent substrate is disposed, thereby capable of preventing the phenomenon of an undesirable photoresist film residue being left upon a silicon substrate using a Levenson-type phase shift mask.

Abstract: There is disclosed a half-tone type phase shift mask consisting of: a transparent substrate; a phase shift pattern capped with a half-tone type light-penetrating pattern, both patterns being provided with a window exposing a predetermined area of the transparent substrate therethrough and the half-tone type light penetrating pattern having a thickness so that it is penetrated by only 5 to 20% of an incident light; and an optically opaque pattern covering all areas of the transparent substrate except for the phase shift pattern capped with the half-tone type light-penetrating pattern and the window, wherein an incident light penetrates only through the window and the phase shift pattern capped with the half-tone type light-penetrating pattern. The half-tone type phase shift mask is capable of preventing light from penetrating undesired areas and thus capable of obtaining a photoresist pattern with a superior smooth profile.

Abstract: There is disclosed a half-tone type phase shift mask comprising a transparent substrate on which a phase shift pattern and a chrome pattern, both provided with a window, are laminated in sequence, said window exposing a predetermined area of said transparent substrate therethrough, and said chrome pattern having a step near the window which is so thick as to permit penetration of only about 5 to 50% of an incident beam of light illuminated on said half-tone type phase shift mask. Such half-tone type phase shift mask is fabricated by: forming a phase shift layer on a transparent substrate; forming a light screen on the phase shift layer; selectively etching the light screen and the phase shift layer in sequence, to form a light screen pattern and a phase shift pattern, both provided with a window exposing a predetermined area of the transparent substrate; and removing the light screen pattern near said window at a predetermined thickness, to form a step near said window.

Abstract: A phase shift layer is formed on a transparent glass on which a Cr pattern is formed and a phase shift layer pattern self-aligned by the Cr pattern is formed so that high resolution is obtained by minimized the overlapping error and the reliability of the semiconductor device is improved.