Abstract: Hard magnetic exchange-coupled composite structures and perpendicular magnetic recording media including the hard magnetic exchange-coupled composite structures, include a ferrite crystal grain and a soft magnetic metal thin film bounded to the ferrite crystal grain by interfacial bonding on an atomic scale and having a thickness of about 5 nm or less, wherein a region of the soft magnetic metal thin film adjacent to an interface with the ferrite crystal grain includes an amorphous soft magnetic metal film.

Abstract: A soft magnetic exchange-coupled composite structure, and a high-frequency device component, an antenna module, and a magnetoresistive device including the soft magnetic exchange-coupled composite structure, include a ferrite crystal grain as a main phase and a soft magnetic metal thin film bound to the ferrite crystal grain by interfacial bonding on an atomic scale. A region of the soft magnetic metal thin film adjacent to an interface with the ferrite crystal grain includes a crystalline soft magnetic metal.

Abstract: An energy management system controlling energy flowing into or out of a battery is provided. The energy management system includes a data receiving unit receiving load data and energy data; a total load amount calculating unit calculating the total amount of power consumption by using the received load data; an energy generation amount calculating unit calculating the total amount of power generation by using the received energy data; a comparator comparing the calculated total amount of the power consumption with the calculated total amount of the power generation; and a switch connecting the battery to a power supply according to a comparison result.

Abstract: Disclosed is a method of fabricating a semiconductor chip. The method includes forming a silicon layer; forming a first layer formed on the silicon layer and including a first seal ring surrounding a first chip area and a second seal ring surrounding a second chip area; and forming a second layer formed on the first layer and including a metal interconnection connecting one of the first and second chip areas and an external terminal.

Abstract: An FRAM device includes first ferroelectric capacitors, second ferroelectric capacitors, first plate lines and second plate lines. The first ferroelectric capacitors can be connected between word lines and bit lines. The second ferroelectric capacitors can be connected between the word lines and bit line bars. The first plate lines can be connected to upper electrodes of the first ferroelectric capacitors. The second plate lines can be connected to upper electrodes of the second ferroelectric capacitors. Thus, the first ferroelectric capacitors connected to the bit lines and the second ferroelectric capacitors connected to the bit line bars can be connected to the different plate lines, so that data can be output from any one of the bit line and the bit line bar. As a result, a layout of a core region can be simplified.

Abstract: An FRAM device can includes first ferroelectric capacitors, second ferroelectric capacitors, first plate lines and second plate lines. The first ferroelectric capacitors can be connected between word lines and bit lines. The second ferroelectric capacitors can be connected between the word lines and bit line bars. The first plate lines can be connected to upper electrodes of the first ferroelectric capacitors. The second plate lines can be connected to upper electrodes of the second ferroelectric capacitors. Thus, the first ferroelectric capacitors connected to the bit lines and the second ferroelectric capacitors connected to the bit line bars can be connected to the different plate lines, so that data can be output from any one of the bit line and the bit line bar. As a result, a layout of a core region can be simplified.

Abstract: An ESD structure in an LCD module mounting structure in a terminal for mounting an LCD module on the inner surface of a case frame to be exposed through an opening of a predetermined size formed on the case frame. In the ESD structure, an EMI shielding is formed to be electrically connected to a main board of the terminal and grounded by coating EMI spray all over the inner surface of the case frame including a part of an overlap between the inner surface of the case frame and the LCD module. At least one through hole penetrates from the inner surface to the outer surface of the case frame at an appropriate portion of the overlap. Conductive means electrically connects the inner surface of the through hole to the EMI shielding. Therefore, externally introduced static electricity is actively grounded inside the terminal along the through hole.

Abstract: A semiconductor device includes a substrate including an active region, a first impurity region, second impurity regions, a word line and a bit line. The active region has end portions extending in a first direction and a central portion extending in a second direction inclined relative to the first direction. The first impurity region is disposed at the central portion, and the second impurity regions are disposed at the end portions. The word line extends in a third direction substantially perpendicular to the first direction. The bit line extends in the first direction. The bit line is electrically connected to the first impurity region. The second impurity regions may be symmetrical to each other centering adjacent two word lines and adjacent one bit line. The semiconductor device may have improved sensing margin by reducing the capacitance of the bit line.

Abstract: Disclosed is a hinge device for a swing-type portable terminal having a first housing, a second housing adapted to be rotated about a hinge axis extending perpendicularly to the front surface of the first housing while facing it, and a hinge device for coupling the second housing to the first housing in such a manner that it can be rotated while facing the latter, including a first hinge cam fixedly coupled to the first housing and exposed to a surface of the first housing, a hinge shaft positioned in the second housing and extending along the hinge axis to be fixedly coupled to the first hinge cam, and a second hinge cam fixedly coupled to the second housing and adapted to reciprocate linearly on the hinge shaft along the hinge axis and to be rotated about the hinge axis while facing the first hinge cam.

Abstract: An ESD structure in an LCD module mounting structure in a terminal for mounting an LCD module on the inner surface of a case frame to be exposed through an opening of a predetermined size formed on the case frame. In the ESD structure, an EMI shielding is formed to be electrically connected to a main board of the terminal and grounded by coating EMI spray all over the inner surface of the case frame including a part of an overlap between the inner surface of the case frame and the LCD module. At least one through hole penetrates from the inner surface to the outer surface of the case frame at an appropriate portion of the overlap. Conductive means electrically connects the inner surface of the through hole to the EMI shielding. Therefore, externally introduced static electricity is actively grounded inside the terminal along the through hole.

Abstract: Disclosed is a hinge device for a swing-type portable terminal having a first housing, a second housing adapted to be rotated about a hinge axis extending perpendicularly to the front surface of the first housing while facing it, and a hinge device for coupling the second housing to the first housing in such a manner that it can be rotated while facing the latter, including a first hinge cam fixedly coupled to the first housing and exposed to a surface of the first housing, a hinge shaft positioned in the second housing and extending along the hinge axis to be fixedly coupled to the first hinge cam, and a second hinge cam fixedly coupled to the second housing and adapted to reciprocate linearly on the hinge shaft along the hinge axis and to be rotated about the hinge axis while facing the first hinge cam.

Abstract: A FeRAM device includes a first memory cell and a second memory cell sharing a cell plate, in which the first memory cell and the second memory cell are commonly coupled to a bit line. The first memory cell is driven by a first word line and the second memory cell is driven by a second word line.

Abstract: A FeRAM device includes a first memory cell and a second memory cell sharing a cell plate, in which the first memory cell and the second memory cell are commonly coupled to a bit line. The first memory cell is driven by a first word line and the second memory cell is driven by a second word line.

Abstract: A ferroelectric random access memory (FeRAM) device, includes: a plurality of memory cells arranged in an M×J matrix, wherein M is a positive integer more than three and J is a positive integer; a number of reference cells connected to each column of the memory cells; and a cell selection means for selecting a memory cell in response to address signals from an external circuit and selecting a reference cell corresponding to the selected memory cell.