Abstract: According to one embodiment, a magnetoresistive memory device includes: a first ferromagnetic layer; a stoichiometric first layer; a first insulator between the first ferromagnetic layer and the first layer; a second ferromagnetic layer between the first insulator and the first layer; and a non-stoichiometric second layer between the second ferromagnetic layer and the first layer. The second layer is in contact with the second ferromagnetic layer and the first layer.

Abstract: A clutch burst prevention method for preventing a non-drive input shaft clutch of a vehicle provided with a double clutch transmission (DCT) from damage may include a torque reduction operation of reducing a torque of an engine by an ECU when a stuck phenomenon occurs on a shift gear of the non-drive input shaft.

Abstract: A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary magnetic fields; allowing a gas to flow along a flow path along the path of the current so that a gas plasma is generated from the gas; providing the gas plasma into a chamber separated from a position where the gas plasma is generated; and performing a process for manufacturing a semiconductor device by employing the gas plasma.

Abstract: There is provided a semiconductor etching apparatus which removes particles remaining on the upper surface of an electro static chuck (ESC) during an etching process, thereby preventing a chucking force from decreasing and minimizing a leak of helium. To prevent a failure of the etching process due to a wafer chucking failure, by preventing polymers from falling down on the upper part of the ESC when a wafer is dechucked or transferred, the semiconductor etching apparatus comprises: an ESC selectively holding a wafer to be entered and positioned inside a chamber, and including a lower electrode part to which RF power is applied; parts positioned at a stepped portion of the ESC and respectively surrounding a side of the ESC; and a gas flow blocking part blocking a gas flow in a vacuum path formed between the ESC and the parts.

Abstract: A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary magnetic fields; allowing a gas to flow along a flow path along the path of the current so that a gas plasma is generated from the gas; providing the gas plasma into a chamber separated from a position where the gas plasma is generated; and performing a process for manufacturing a semiconductor device by employing the gas plasma.

Abstract: A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary magnetic fields; allowing a gas to flow along a flow path along the path of the current so that a gas plasma is generated from the gas; providing the gas plasma into a chamber separated from a position where the gas plasma is generated; and performing a process for manufacturing a semiconductor device by employing the gas plasma.

Abstract: There is provided a semiconductor etching apparatus which removes particles remaining on the upper surface of an electro static chuck (ESC) during an etching process, thereby preventing a chucking force from decreasing and minimizing a leak of helium. To prevent a failure of the etching process due to a wafer chucking failure, by preventing polymers from falling down on the upper part of the ESC when a wafer is dechucked or transferred, the semiconductor etching apparatus comprises: an ESC selectively holding a wafer to be entered and positioned inside a chamber, and including a lower electrode part to which RF power is applied; parts positioned at a stepped portion of the ESC and respectively surrounding a side of the ESC; and a gas flow blocking part blocking a gas flow in a vacuum path formed between the ESC and the parts.

Abstract: There is provided a semiconductor etching apparatus which removes particles remaining on the upper surface of an electro static chuck (ESC) during an etching process, thereby preventing a chucking force from decreasing and minimizing a leak of helium. To prevent a failure of the etching process due to a wafer chucking failure, by preventing polymers from falling down on the upper part of the ESC when a wafer is dechucked or transferred, the semiconductor etching apparatus comprises: an ESC selectively holding a wafer to be entered and positioned inside a chamber, and including a lower electrode part to which RF power is applied; parts positioned at a stepped portion of the ESC and respectively surrounding a side of the ESC; and a gas flow blocking part blocking a gas flow in a vacuum path formed between the ESC and the parts.

Abstract: A method for generating a plasma. A gas flows along a flow path having the displacement identical to the lines of magnetic force of the main magnetic field, and high frequency alternating current is applied to the gas, thereby generating a gas plasma. For example, a gas is flowed through a pipe in a first direction. Electricity is conducted through the pipe in substantially the first direction. And a magnetic field is applied along a second direction (e.g., perpendicular to the first direction) to the gas flowing in the pipe such that a plasma is induced in the pipe.

Abstract: A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary magnetic fields; allowing a gas to flow along a flow path along the path of the current so that a gas plasma is generated from the gas; providing the gas plasma into a chamber separated from a position where the gas plasma is generated; and performing a process for manufacturing a semiconductor device by employing the gas plasma.

Abstract: An input/output valve switching apparatus of a semiconductor manufacturing system minimizes a vibration set up while operating an input/output valve for opening and closing a wafer-transfer passage that connects chambers of the system. The switching apparatus includes a valve actuator having a close port and an open port, a first fluid line connected to the close port, a second fluid line connected to the open port, first flow regulators installed in the first and second fluid lines, respectively, to regulate the flow rate of fluid, and second fluid flow regulators installed in the first and second fluid lines to regulate the flow rate of the fluid that has passed. The second fluid flow regulators can prevent a rapid introduction of the fluid into the actuator.

Abstract: An apparatus for matching the impedance of an RF generator to the impedance of an RF load, for use in manufacturing semiconductor devices by using a plasma. The apparatus includes a variable inductor coupled to a variable capacitor and an invariable capacitor, the variable inductor having two inductors coupled electrically with each other in series and disposed adjacent to each other. At least one of the two inductors is disposed movably to make the magnetic flux of the one inductor interfere with the magnetic flux of the other inductor, thereby to control the inductance of the variable inductor. In the case of a plasma enhanced semiconductor wafer processing system, the apparatus can reduce the time necessary to achieve an RF match between the RF generator and the RF load, thereby increasing the life of the apparatus.

Abstract: A method and an apparatus for generating a plasma, and a method and an apparatus for manufacturing a semiconductor device using the plasma. A gas flows along a flow path having the displacement identical to the lines of magnetic force of the main magnetic field, and high frequency alternating current is applied to the gas, thereby generating a gas plasma. The gas plasma is provided into a processing chamber to perform a process for manufacturing the semiconductor device.

Abstract: A refrigeration system regulates the temperature of an electrostatic wafer chuck disposed in a process chamber. The refrigeration system includes a heat exchanger disposed in a heat exchange relationship with the electrostatic chuck, a refrigerator, a temperature sensor, and a temperature controller for controlling the refrigerator to cool the coolant withdrawn from the heat exchanger to a desired temperature in response to the temperature detected by the temperature sensor. The heat exchanger forms a coolant passageway inside the electrostatic chuck, and the refrigerator is disposed outside the process chamber. The temperature sensor is disposed within the body of the electrostatic chuck. The temperature of the electrostatic chuck can be regulated so as to be maintained nearly constant because the temperature used to control the cooling of the coolant is measured directly from the body of the electrostatic chuck.

Abstract: An input/output valve switching apparatus of a semiconductor manufacturing system minimizes a vibration set up while operating an input/output valve for opening and closing a wafer-transfer passage that connects chambers of the system. The switching apparatus includes a valve actuator having a close port and an open port, a first fluid line connected to the close port, a second fluid line connected to the open port, first flow regulators installed in the first and second fluid lines, respectively, to regulate the flow rate of fluid, and second fluid flow regulators installed in the first and second fluid lines to regulate the flow rate of the fluid that has passed. The second fluid flow regulators can prevent a rapid introduction of the fluid into the actuator. SEC.

Abstract: A refrigeration system regulates the temperature of an electrostatic wafer chuck disposed in a process chamber. The refrigeration system includes a heat exchanger disposed in a heat exchange relationship with the electrostatic chuck, a refrigerator, a temperature sensor, and a temperature controller for controlling the refrigerator to cool the coolant withdrawn from the heat exchanger to a desired temperature in response to the temperature detected by the temperature sensor. The heat exchanger forms a coolant passageway inside the electrostatic chuck, and the refrigerator is disposed outside the process chamber The temperature sensor is disposed within the body of the electrostatic chuck. The temperature of the electrostatic chuck can be regulated so as to be maintained nearly constant because the temperature used to control the cooling of the coolant is measured directly from the body of the electrostatic chuck.

Abstract: An apparatus for matching the impedance of an RF generator to the impedance of an RF load, for use in manufacturing semiconductor devices by using a plasma. The apparatus includes a variable inductor coupled to a variable capacitor and an invariable capacitor, the variable inductor having two inductors coupled electrically with each other in series and disposed adjacent to each other. At least one of the two inductors is disposed movably to make the magnetic flux of the one inductor interfere with the magnetic flux of the other inductor, thereby to control the inductance of the variable inductor. In the case of a plasma enhanced semiconductor wafer processing system, the apparatus can reduce the time necessary to achieve an RF match between the RF generator and the RF load, thereby increasing the life of the apparatus.

Abstract: A plasma apparatus for fabricating a semiconductor device, is provided. This plasma apparatus includes a grounded chamber for providing a space where a predetermined process is to be performed, a chuck mounted within the chamber and insulated from the chamber, a gas injection ring installed around the sidewall of the chuck, an induction plasma power source connected to the chuck, a system controller for controlling the induction plasma power source, and a capacitance compensator for keeping the total chuck capacitance between the chuck and a ground terminal at a constant value. The gas injection ring is separated from the chuck by a predetermined distance and is electrically connected to the chamber.