Abstract: The inventive concept provides a teaching method for teaching a transfer position of a transfer robot. The teaching method includes: searching for an object on which a target object to be transferred by the transfer robot is placed, based on a 3D position information acquired by a first sensor; and acquiring coordinates of a second direction and coordinates of a third direction of the object based on a data acquired from a second sensor which is a different type from the first sensor.

Abstract: A conductive composite material, a method of preparing the same, and a secondary battery including the same. The conductive composite material may increase the proportion of an active material when forming an electrode by chemically bonding a conductive material and a binder to each other. A method of preparing the conductive composite material comprises ionizing carbon-based particles in a predetermined polarity, ionizing PTFE particles in a polarity different from that of the carbon-based particles, and chemically bonding the ionized carbon-based particles and the ionized PTFE particles, which are ionized in different polarities, to each other.

Abstract: Provided is a display device comprising a substrate, a first data line and a second data line disposed on the substrate and extended in a first direction, an anode electrode disposed on the first data line and the second data line, a pixel-defining film disposed over the anode electrode and defining an emission area, an organic light-emitting layer disposed on the anode electrode, and a cathode electrode disposed on the organic light-emitting layer, wherein each of the first data line and the second data line has a curved shape when viewed from a top where the first anode electrode and the second anode electrode overlap the anode electrode.

Abstract: A display device includes a light emitting element including a pixel electrode, a light emitting layer, and a common electrode. A capping layer is disposed on the common electrode. An auxiliary layer is disposed on the capping layer. A thin film encapsulation layer includes a first encapsulation layer, a second encapsulation layer, and a third encapsulation layer. The first encapsulation layer includes a first inorganic insulating layer including silicon nitride; a second inorganic insulating layer including silicon oxide; and a third inorganic insulating layer including silicon oxynitride. The auxiliary layer has a thickness of 200 ? to 1400 ?, the first inorganic insulating layer has a thickness of 400 ? to 3500 ?, the second inorganic insulating layer has a thickness of 200 ? to 2400 ?, and the third inorganic insulating layer has a thickness of 4000 ? or more.

Abstract: An implementation relates to a polyester-based film having low hygroscopicity, a manufacturing method therefor, and a membrane electrode assembly comprising same, and the polyester-based film has excellent flexibility, adhesion and durability and has a moisture absorption represented by formula 1, which meets 0.25% or less, and thus has excellent hydrolysis resistance so as to be applied as a film for a fuel cell sub-gasket and exhibit excellent characteristics.

Abstract: The present disclosure relates to a virus detection method that detects whether viruses are arranged in multiple layers and the density of viruses using a color change of a virus detector. A virus detection method according to an embodiment of the present disclosure includes: taking an image of a virus detector reacting with a target analysis object; and determining whether viruses are arranged in multiple layers and density of the viruses in the target analysis object in accordance with a saturation value of the image.

Abstract: The present disclosure provides a sunroof system for a vehicle including glass slidably insertable into a vehicle body of the vehicle, and a passive radiant cooling layer disposed below the glass and slidably insertable into the vehicle body. The passive radiant cooling layer includes at least two layers among a first emission layer having a high emissivity in a first band relative to a band outside the first band, a second emission layer having a high emissivity in a second band, which is included in the first band and narrower than the first band, relative to a band outside the second band, and a reflection layer having a high reflectivity in a third band, which is a shorter wavelength than the first band, relative to a band outside the third band.

Abstract: A battery cell manufacturing device according to one embodiment of the present disclosure includes a sealing tool that presses a sealing part, in a battery case including a sealing part having a structure in which an electrode assembly is mounted onto a receiving part, and an outer peripheral surface is sealed by heat fusion, wherein the sealing tool comprises a first sealing tool located at an upper part and a second sealing tool located at a lower part with respect to the battery case, and wherein the sealing tool comprises a sealing surface in contact with the sealing part, and at least one pressure sensor is located on the sealing surface.

Abstract: A physically unclonable function (PUF) identifier (ID) includes a random fibrous medium and a frame configured to support the random fibrous medium. According to the present disclosure, it is possible to implement a PUF ID that is inexpensive and excellent in encryption performance, and PUF ID reader that reads the PUF ID.

Abstract: An apparatus for quantum-based physically unclonable functions is disclosed. The apparatus for quantum-based physically unclonable functions according to an embodiment of the present embodiment comprises a random nanostructure formed on a substrate by hydrothermal synthesis, wherein the random nanostructure emits a laser light of a predetermined pattern through the quantum activity of the random nanostructure.

Abstract: An apparatus and a method for improving nonlinearity of a power amplifier in a wireless communication system are provided. A transmission apparatus in a wireless communication system comprises: at least one processor; a transceiver; and an amplifier for amplifying a signal provided from the transceiver, wherein if a power of a signal inputted into the transceiver is smaller than a reference value, the transceiver attenuates the power of the signal based on a gain compensation value corresponding to the power of the signal.

Abstract: An apparatus and a method for improving nonlinearity of a power amplifier in a wireless communication system are provided. A transmission apparatus in a wireless communication system comprises: at least one processor; a transceiver; and an amplifier for amplifying a signal provided from the transceiver, wherein if a power of a signal inputted into the transceiver is smaller than a reference value, the transceiver attenuates the power of the signal based on a gain compensation value corresponding to the power of the signal.

Abstract: The present disclosure provides a flame-resistant electrolyte for rechargeable lithium secondary batteries, and a rechargeable lithium secondary battery including the same. The flame-resistant electrolyte for rechargeable lithium secondary batteries can reduce volatility of an organic solvent, and inhibit flammability to improve stability of a battery when a flame-resistant solvent, which includes a fluorinated phosphazene-based phosphorus compound and a phosphite-based compound for forming protective films on surfaces of negative and positive electrodes, is mixed with a lithium salt and a carbonate-based solvent, and thus has good lifespan characteristics and high battery charge/discharge efficiency even under high-temperature and high-voltage environments, and also has improved battery performance since an electrode interface is stabilized to inhibit side reaction with an electrolyte.

Abstract: The present invention relates to a silicon DBR structure-integrated light device, and a preparation method thereof, and more specifically, to a silicon DBR structure-integrated light device or vertical cavity light emitting diode, and a preparation method thereof, enabling preparation by a small number of layers and capable of reducing process time and costs due to a large contrast in refractive index of a silicon DBR structure formed by depositing silicon in a slanted or vertical manner.

Abstract: A method of fabricating nanostructure for antireflection and a method of fabricating a photo device integrated with the nanostructure for antireflection are provided. The fabrication of the nanostructure for antireflection includes coating a solution containing a combination of metal ions with organic or inorganic ions on a substrate, sintering the coated solution using an annealing process to grow nanoscale metal particles, and chemically etching the substrate using the metal particles as mask or accelerator to form a subwavelength nanostructure on the surface of the substrate, thereby manufacturing the nanostructure for antireflection without an apparatus requiring a vacuum state using a simple method for a short amount of time to minimize reflection of light at an interface between a semiconductor material and the air, and producing a photo device having good luminous efficiency and performance at low cost in large quantities by applying it to the photo device.

Abstract: A display driving integrated circuit operates as both a radio-frequency identification (RFID) reader and a display driver. The display driving integrated circuit operates as the RFID reader by supplying power to an RFID tag, verifying the RFID tag according to communication between the RFID tag and the processor to produce verification data, transferring the verification data from the processor to the RFID tag, and transmitting some of the verification data to the display unit. It operates as a display driver by processing data received from the processor and transferring the processed data to the display unit. The display driving integrated circuit implements functions for the RFID reader and the display unit driver using one or more shared elements selected from a timer, a clock signal generator, a cyclic redundancy check calculator, and a data interface.

Abstract: The present invention relates to a silicon DBR structure-integrated light device, and a preparation method thereof, and more specifically, to a silicon DBR structure-integrated light device or vertical cavity light emitting diode, and a preparation method thereof, enabling preparation by a small number of layers and capable of reducing process time and costs due to a large contrast in refractive index of a silicon DBR structure formed by depositing silicon in a slanted or vertical manner.

Abstract: A method of fabricating an antireflective grating pattern and a method of fabricating an optical device integrated with an antireflective grating pattern are provided. The method of fabricating the antireflective grating pattern includes forming a photoresist (PR) pattern on a substrate using a hologram lithography process, forming a PR lens pattern having a predetermined radius of curvature by reflowing the PR pattern, and etching the entire surface of the substrate including the PR lens pattern to form a wedge-type or parabola-type antireflective subwavelength grating (SWG) pattern having a pointed tip on a top surface of the substrate. In this method, a fabrication process is simplified, the reflection of light caused by a difference in refractive index between the air and a semiconductor material can be minimized, and the antireflective grating pattern can be easily applied to optical devices.

Abstract: A micro/nano combined structure, a manufacturing method of a micro/nano combined structure, and a manufacturing method of an optical device having a micro/nano combined structure integrated therewith, the method comprising: forming a micro structure on a substrate; depositing a metal thin film on the substrate on which the micro structure is formed; heat treating and transforming the metal thin film into metal particles; and using the metal particles as a mask to form a non-reflective nanostructure having a frequency below that of light wavelengths and a sharp wedge-shaped end, on the top surface of the substrate on which the micro structure is formed, and etching the front surface of the substrate on which the micro structure is formed. The manufacturing process is simple, light reflectivity that occurs wherein a difference in refractive indices of air and semiconductor material can be minimized, and is easily applied to the optical device field.

Abstract: The present invention relates to a silicon multilayer anti-reflective film with a gradually varying refractive index and a manufacturing method therefor, and a solar cell having the same and a manufacturing method therefor, wherein: the refractive index of a silicon thin film is adjusted by depositing silicon on a semiconductor or glass substrate with a slight tilt; and an anti-reflective film with a gradually varying refractive index is implemented using a silicon multi-layer film in which multi-layer film are stacked with different tilt angles. In addition, the silicon multilayer anti-reflective film according to the present invention is applied to a silicon solar cell, thereby suppressing reflection in the inside of the solar cell and providing an excellent heat radiation characteristic using a high heat transfer coefficient.