Abstract: The present invention relates to a method for preparing a dendritic cell, a dendritic cell prepared thereby and a use thereof, and more specifically, to a method for preparing a dendritic cell, including: treating a dendritic cell at a maturation stage rather than at an immature stage with an antigen bound to a peptide having a cell membrane permeability to prepare a dendritic cell with improved antigen-presenting ability, a dendritic cell prepared by the method, and an immunotherapeutic agent thereof, a use for anti-tumor vaccines, or a pharmaceutical composition for treating tumors, containing the same.

Abstract: The present invention relates to a composition for maturing dendritic cells, comprising, as a maturation-promoting factor, Interleukin-1? (IL-1?), Interleukin-6 (IL-6), Tumor necrosis factor-? (TNF-?), Interferon-? (IFN-?), Prostaglandin E2 (PGE2), Picibanil (OK432) and/or Poly IC. The composition for maturing dendritic cells of the present invention may have the effects of not only improving the ability of dendritic cells to induce an immune response, but also of decreasing the antigen non-specific immune response of dendritic cells and increasing antigen-specific immune response of dendritic cells, thus maximizing the effects of immunotherapy.

Abstract: An electronic device is provided. The electronic device includes an input panel configured to periodically sense touch coordinates corresponding to a touch manipulation of a user; and a processor configured to periodically receive the touch coordinates from the input panel, calculate a variation of the touch coordinates based on the touch coordinates, change a reference value for determining movement of the touch manipulation based on the variation of the touch coordinates, and determine whether the touch manipulation moves, based on the reference value.

Abstract: A method of controlling an activation area of a touch screen panel and an electronic device using the same. A method of operating an electronic device, according to an embodiment of the present disclosure, may include: setting a partial area of a touch screen panel, which corresponds to a view window of a cover that is mounted on the electronic device, as an effective touch area when the cover is closed; and when the cover mounted on the electronic device is closed, activating the partial area of the touch screen panel that corresponds to the set effective touch area. In addition, the various embodiments of the present disclosure also include other embodiments as well as the above-described embodiment.

Abstract: The present invention relates to a composition for maturing dendritic cells, comprising, as a maturation-promoting factor, Interleukin-1? (IL-1?), Interleukin-6 (IL-6), Tumor necrosis factor-? (TNF-?), Interferon-? (IFN-?), Prostaglandin E2 (PGE2), Picibanil (OK432) and/or Poly IC. The composition for maturing dendritic cells of the present invention may have the effects of not only improving the ability of dendritic cells to induce an immune response, but also of decreasing the antigen non-specific immune response of dendritic cells and increasing antigen-specific immune response of dendritic cells, thus maximizing the effects of immunotherapy.

Abstract: The present invention relates to a method for preparing a purified extract of Lonicera Japonica THUNBERG and the composition comprising the same for preventing and treating sepsis and septic shock. The purified extract of purified extract of Lonicera Japonica THUNBERG potent antisepsis activity in severe sepsis CLP model test, the effect on MODS, and the inhibitory effect on various pro-inflammatory cytokines such as TNF-alpha, IL-1beta, IFN-gamma, HMGB-1 etc, as well as it showed unexpectedly synergistic effect on the treatment of sepsis and septic shock in case of combining with the commercially available anti-septic agent such as broad-spectrum anti-biotic to the person skilled in the art, therefore, it can be useful in treating and preventing the sepsis and septic shock as a medicament and health functional food.

Abstract: An apparatus and method for inspecting whether marking of a target chip in a wafer has been performed normally are provided. The apparatus includes a voltage application detector which detects application of a voltage to an external circuit, an image pickup unit which captures an image, and a controller which controls the image pickup unit to capture an image at at least one predetermined point when the application of the voltage is detected by the voltage application detector and determines whether the marking of the target chip has been performed normally based on the captured image. Accordingly, extra time is not required to inspect whether the marking of the target chip in the wafer has been performed normally and the inspection is performed without using a prober operation program.

Abstract: A semiconductor device comprises a recessed trench in a substrate, a gate insulating layer including a first portion and a second portion, the first portion having a first thickness and covering lower portions of sidewalls of the recessed trench and a bottom surface of the recessed trench, and the second portion having a second thickness and covering upper portions of the sidewalls of the recessed trench, the second thickness being greater than the first thickness, a gate electrode filling the recessed trench, a first impurity region having a first concentration and disposed at opposing sides of the gate electrode, and a second impurity region having a second concentration greater than the first concentration and disposed on the first impurity region to correspond to the second portion of the gate insulating layer.

Abstract: Provided is a method of fabricating a semiconductor device having a transistor. The method includes forming a first gate trench in a first active region of a semiconductor substrate. A first gate layer partially filling the first gate trench is formed. Ions may be implanted in the first gate layer and in the first active region on both sides of the first gate layer such that the first gate layer becomes a first gate electrode of a first conductivity type and first impurity regions of the first conductivity type are formed on both sides of the first gate electrode.

Abstract: A semiconductor device including a recessed channel transistor, and a method of manufacturing the same, provide: a substrate in which an isolation trench is provided; an isolation layer provided in the isolation trench so as to define a pair of source/drain regions in the substrate; a gate pattern provided in the isolation trench between the pair of source/drain regions, the gate pattern having a top surface at a same level as a top surface of the isolation layer and having a bottom surface at a lower depth than the pair of source/drain regions with respect to a top surface of the substrate; and a gate insulating layer provided between the substrate and the gate pattern at a bottom surface of the isolation trench.

Abstract: Recessed channel transistor (RCT) devices, methods of manufacturing the RCT devices, and a display apparatuses including the RCT devices. A RCT device includes a substrate, a first trench in the substrate and having a first width; a first gate insulating layer on an inner wall of the first trench; a first recess gate on the first gate insulating layer and having a groove in a center portion of an upper surface of the first recess gate; and a source and drain in the substrate on both sides of the first recess gate.

Abstract: A semiconductor device comprises a recessed trench in a substrate, a gate insulating layer including a first portion and a second portion, the first portion having a first thickness and covering lower portions of sidewalls of the recessed trench and a bottom surface of the recessed trench, and the second portion having a second thickness and covering upper portions of the sidewalls of the recessed trench, the second thickness being greater than the first thickness, a gate electrode filling the recessed trench, a first impurity region having a first concentration and disposed at opposing sides of the gate electrode, and a second impurity region having a second concentration greater than the first concentration and disposed on the first impurity region to correspond to the second portion of the gate insulating layer.

Abstract: Provided is a method of fabricating a semiconductor device having a transistor. The method includes forming a first gate trench in a first active region of a semiconductor substrate. A first gate layer partially filling the first gate trench is formed. Ions may be implanted in the first gate layer and in the first active region on both sides of the first gate layer such that the first gate layer becomes a first gate electrode of a first conductivity type and first impurity regions of the first conductivity type are formed on both sides of the first gate electrode.

Abstract: Disclosed is a method of fabricating a semiconductor device having improved processing stability. A protection layer may be formed on a semiconductor substrate. A sacrificial layer having an etch selectivity with respect to the protection layer may be formed on the protection layer. A part of the sacrificial layer may be selectively etched, thereby forming an alignment key. An aligned well may be formed using the alignment key. An aligned isolation layer may be formed in the semiconductor substrate having the well formed therein, using the alignment key.

Abstract: Disclosed is a method of setting up an output format of a set-top box matching an output format of a set-top box identically with that of a display device if the output formats of the set-top box and display device fail to be identical to each other. The present invention includes the steps of setting up preliminarily an output format of the set-top box as one of a plurality of formats the set-top box enables to output, outputting a predetermined message with the preliminary setup output format from the set-top box to a display device connected to the set-top box, informing, if the predetermined message is displayed on the display device, the set-top box of the message display, and fixing the preliminary setup output format to the output format of the set-top box, wherein the output format of the set-top box is made to coincide with an output format of the display device if the output formats of the set-top box and display device are different from each other.