Patents by Inventor Young-moon Kim

Young-moon Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160180489
    Abstract: An apparatus and method are described for reducing power when reading and writing graphics data. For example, one embodiment of an apparatus comprises: a graphics processor unit (GPU) to process graphics data including floating point data; a set of registers, at least one of the registers of the set partitioned to store the floating point data; and encode/decode logic to reduce a number of binary 1 values being read from the at least one register by causing a specified set of bit positions within the floating point data to be read out as 0s rather than 1s.
    Type: Application
    Filed: December 23, 2014
    Publication date: June 23, 2016
    Inventors: Young Moon Kim, Sang Phill Park
  • Patent number: 7885107
    Abstract: A method of programming a non-volatile memory cell includes programming a first bit of multi-bit data by setting a threshold voltage of the non-volatile memory cell to a first voltage level within a first of a plurality of threshold voltage distributions. A second bit of the multi-bit data is programmed by setting the threshold voltage to a second voltage level based on a value of the second bit. The second voltage level is the same as the first voltage level if the second bit is a first value and the second voltage level is within a second of the plurality of threshold voltage distributions if the second bit is a second value. A third bit of the multi-bit data is programmed by setting the threshold voltage to a third voltage level based on a value of the third bit.
    Type: Grant
    Filed: July 25, 2008
    Date of Patent: February 8, 2011
    Assignee: Samsung Electronics Co, Ltd.
    Inventors: Ju-hee Park, Young-moon Kim, Yoon-dong Park, Seung-hoon Lee, Kyoung-lae Cho, Sung-jae Byun, Seung-hwan Song
  • Publication number: 20090091974
    Abstract: A method of programming a non-volatile memory cell includes programming a first bit of multi-bit data by setting a threshold voltage of the non-volatile memory cell to a first voltage level within a first of a plurality of threshold voltage distributions. A second bit of the multi-bit data is programmed by setting the threshold voltage to a second voltage level based on a value of the second bit. The second voltage level is the same as the first voltage level if the second bit is a first value and the second voltage level is within a second of the plurality of threshold voltage distributions if the second bit is a second value. A third bit of the multi-bit data is programmed by setting the threshold voltage to a third voltage level based on a value of the third bit.
    Type: Application
    Filed: July 25, 2008
    Publication date: April 9, 2009
    Inventors: Ju-hee Park, Young-moon Kim, Yoon-dong Park, Seung-hoon Lee, Kyoung-lae Cho, Sung-jae Byun, Seung-hwan Song
  • Publication number: 20070287479
    Abstract: Provided is a method and apparatus of writing a message in a mobile communication terminal. The method includes checking whether a button input has been made during an idle state. A number string for a dialing according to the button input and a character string for writing the message on a main screen are simultaneously displayed, when the button input has been made. The short messaging mode can be easily and quickly accessed and used.
    Type: Application
    Filed: March 29, 2007
    Publication date: December 13, 2007
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Young-Moon Kim