Abstract: A method of providing a flash card and apparatuses for performing the method are disclosed. A method of providing a flash card in a learning system including a first terminal and second terminals may include creating, by the first terminal, a first flash card associated with a corresponding page of an electronic book (e-book) currently being displayed on a display of the first terminal, and transmitting, by the first terminal, the first flash card to the second terminals.

Abstract: A semiconductor device including a semiconductor substrate, an integrated circuit on the semiconductor substrate, an insulation layer covering the integrated circuit, and a plurality of metal line patterns on the insulation layer. First and second adjacent metal line patterns of the plurality of metal line patterns are spaced apart from each other by a space, and each of the first and second adjacent metal line patterns has at least one slit.

Abstract: A centrifugal supercharger includes, a drive pulley connected to receive rotating power from an engine. an electronic blocking the rotating power to be supplied to the drive pulley or supplying the rotating power to the drive pulley. a speed increasing device increasing rotation speed of the drive pulley. a compressor including an impeller receiving rotation power having speed increased by the speed increasing device and flowing and compressing external air and an impeller housing.

Abstract: A compression ignition gasoline engine uses low-cetane number fuel, such as gasoline. The engine includes a combustion control device having an injector directly injecting fuel into a combustion chamber, intake and exhaust valves, and a variable valve device changing a valve timing, in which the compression ignition gasoline engine includes: at least two intake valves and two exhaust valves; a spark plug positioned at the center portion of the combustion chamber; and an injector positioned adjacent to the spark plug toward the center portion of the combustion chamber, in which the exhaust valve is a symmetric valve lift in which the lift and the opening section of the tow exhaust valves are the same in low lift, and the intake valve is an asymmetric valve lift in which the lift and the opening of the two intake valves are different in the low lift.

Abstract: An apparatus and method to inspect a defect of a substrate. Since a recess of an under layer of a substrate is darker than a projection of a top layer, a ratio of a value of a secondary electron signal (of an SEM) of the under layer to a value of the top layer may be increased to improve a pattern image used to inspect an under layer defect. Several conditions under which electron beams are irradiated may be set, and the pattern may be scanned under such conditions. Secondary electron signals may be generated according to the conditions and converted into image data to display various pattern images. Scan information on the images may be stored with positional information on the substrate. Each of scan information on the pattern images may be calculated to generate a new integrated image.

Abstract: A method for manufacturing a silicon carbide (SiC) sintered material according to the embodiment includes the steps of forming a mixture by mixing SiC powder with a resin and a ball; drying the mixture; and loading the dried mixture in a mold to sinter the dried mixture. The ball includes at least one of a Teflon ball, an SiC ball, a silicon nitride ball, an alumina ball, and a zirconia ball.

Abstract: A semiconductor device including a semiconductor substrate, an integrated circuit on the semiconductor substrate, an insulation layer covering the integrated circuit, and a plurality of metal line patterns on the insulation layer. First and second adjacent metal line patterns of the plurality of metal line patterns are spaced apart from each other by a space, and each of the first and second adjacent metal line patterns has at least one slit.

Abstract: A hot press sintering apparatus according to the embodiment includes a chamber; a mold member located in the chamber and including a mold space section to be filled with a raw material; a press member for pressing and processing the raw material in the mold member; and a heating member for heating an interior of the chamber. The mold member includes a first mold part and a second mold part inserted into the first mold part and formed with the mold space section.

Abstract: A semiconductor device including a semiconductor substrate, an integrated circuit on the semiconductor substrate, an insulation layer covering the integrated circuit, and a plurality of metal line patterns on the insulation layer. First and second adjacent metal line patterns of the plurality of metal line patterns are spaced apart from each other by a space, and each of the first and second adjacent metal line patterns has at least one slit.

Abstract: In an etching composition for an under-bump metallurgy (UBM) layer and a method of forming a bump structure, the etching composition includes about 40% by weight to about 90% by weight of hydrogen peroxide (H2O2), about 1% by weight to about 20% by weight of an aqueous basic solution including ammonium hydroxide (NH4OH) or tetraalkylammonium hydroxide, about 0.01% by weight to about 10% by weight of an alcohol compound, and about 2% by weight to 30% by weight of an ethylenediamine-based chelating agent. The etching composition may effectively etch the UBM layer including titanium or titanium tungsten and remove impurities. A method of forming a bump structure may employ such an etching composition.

Abstract: A variable turbocharger including a turbine housing, a first scroll fluidly communicating with a turbine, a second scroll formed along an outside of the first scroll, wherein the first scroll and the second scroll are disposed within the turbine housing for exhaust gas to exhaust through the turbine, a partitioning unit for selectively separating the first scroll and the second scroll, and a a flux control valve disposed at the exhaust gas inflow portion and selectively coupled to the partitioning unit for blocking the exhaust gas from flowing into the second scroll. The variable turbocharger may prevent turbo lag at a low speed and be highly efficient at a high speed.

Abstract: An apparatus for measuring a semiconductor device is provided. The apparatus includes a beam emitter configured to irradiate an electron beam onto a sample having the entire region composed of a critical dimension (CD) region, which is formed by etching or development, and a normal region connected to the CD region, and an analyzer electrically connected to the beam emitter, and configured to select and set a wavelength range of a region in which a difference in reflectance between the CD region and the normal region occurs, after obtaining reflectance from the electron beam reflected by a surface of the sample according to the wavelength of the electron beam. A method of measuring a semiconductor device using the measuring apparatus is also provided.

Abstract: A variable turbocharger including a turbine housing, a first scroll fluidly communicating with a turbine, a second scroll formed along an outside of the first scroll, wherein the first scroll and the second scroll are disposed within the turbine housing for exhaust gas to exhaust through the turbine, a partitioning unit for selectively separating the first scroll and the second scroll, and a flux control valve disposed at the exhaust gas inflow portion and selectively coupled to the partitioning unit for blocking the exhaust gas from flowing into the second scroll. The variable turbocharger may prevent turbo lag at a low speed and be highly efficient at a high speed.

Abstract: An embodiment of a semiconductor device includes a semiconductor substrate, a first insulating layer formed over the semiconductor substrate, and a first semiconductor layer formed over the first insulation layer. At least one gettering region is formed in at least one of the first insulating layer and the first semiconductor layer. The gettering region includes a plurality of gettering sites, and at least one gettering site includes one of a precipitate, a dispersoid, an interface with the dispersoid, a stacking fault and a dislocation.

Abstract: The present invention provides an electrode made of carbon nanotubes or carbon nanofibers and a process for preparing the same. The electrode comprising a current collector, sulfur or metal nanoparticles as a binder, and carbon nanotubes or carbon nanofibers is characterized in that the sulfur or metal nanoparticles are bonded, deposited, or fused on the surfaces of the carbon nanotubes or carbon nanofibers so that the carbon nanotubes or carbon nanofibers are bonded to each other and also bonded to the current collector. The electrode prepared according to the present invention exhibits low internal resistance, strong durability and low equivalent series resistance, and therefore the electrode can be effectively used for secondary batteries, supercapacitors or fuel cells.

Abstract: A variable valve lift apparatus may include an input unit, a control link disposed to a control shaft, a driving cam that is provided with a contact portion and pivotally disposed to the control shaft, a valve opening unit that contacts the contact portion and is opened and closed in accordance with pivoting of the driving cam, wherein the control link, the input unit and the driving cam are connected by a connecting unit, and contact positions of the valve opening unit and the contact portion are variable according to a relative rotation angle of the control link around the control shaft.

Abstract: A refrigerator includes: a cabinet formed with a plurality of storage spaces divided; a first ice maker provided in any one of the plurality of storage spaces; a dispenser provided to a door, through which ice made in the first ice maker is discharged; a second ice maker provided in the storage space different from the storage space where the first ice maker is provided; and a water feeding passage branched such that it is possible to selectively supply water to the first ice maker and the second ice maker from a water supply source.

Abstract: In an etching composition for an under-bump metallurgy (UBM) layer and a method of forming a bump structure, the etching composition includes about 40% by weight to about 90% by weight of hydrogen peroxide (H2O2), about 1% by weight to about 20% by weight of an aqueous basic solution including ammonium hydroxide (NH4OH) or tetraalkylammonium hydroxide, about 0.01% by weight to about 10% by weight of an alcohol compound, and about 2% by weight to 30% by weight of an ethylenediamine-based chelating agent. The etching composition may effectively etch the UBM layer including titanium or titanium tungsten and remove impurities. A method of forming a bump structure may employ such an etching composition.

Abstract: A system for correcting turbo lag may include an engine provided with a plurality of cylinders, an intake manifold for supplying air to the plurality of cylinders, and an exhaust manifold for exhausting exhaust gas generated in the plurality of cylinders, an intake passage connected to the intake manifold so as to supply fresh air to the intake manifold, an exhaust passage connected to the exhaust manifold so as to exhaust the exhaust gas gathered in the exhaust manifold, a turbo charger provided with a turbine mounted at the exhaust manifold or the exhaust passage and rotated by the exhaust gas and a first compressor mounted at the intake passage and connected to the turbine so as to rotate with the turbine and compress the air of the intake passage, a bypass passage branching off at a first point of the intake passage and joining the intake passage at a second point of the intake passage downstream of the first point, a second compressor mounted at the bypass passage and compressing the air passing through