Abstract: An information storage device includes a first portion comprising at first at least one magnetic track, each of the at least one magnetic track in the first portion including a first plurality of magnetic domains and being configured to store a first type of data therein and a second portion comprising a second at least one magnetic track, each of the at least one magnetic track in the second portion including a second plurality of magnetic domains and being configured to store a second type of data therein, the second type of data being related to the first type of data.

Abstract: Provided are nonvolatile memory devices and program methods thereof, an integrated circuit memory system includes a memory array comprising at least one magnetic track, each of the at least one magnetic track including a plurality of magnetic domains and at least one read/write unit coupled thereto, decoding circuitry coupled to the memory array that is operable to select at least one of the magnetic domains, a read/write controller coupled to the memory array that is operable to read data from at least one of the plurality of magnetic domains and to write data to at least one of the plurality of magnetic domains via the at least one read/write unit coupled to each of the at least one magnetic track, and a domain controller coupled to memory array that is operable to move data between the magnetic domains on each of the at least one magnetic track.

Abstract: An information storage device includes a first portion comprising at first at least one magnetic track, each of the at least one magnetic track in the first portion including a first plurality of magnetic domains and being configured to store a first type of data therein and a second portion comprising a second at least one magnetic track, each of the at least one magnetic track in the second portion including a second plurality of magnetic domains and being configured to store a second type of data therein, the second type of data being related to the first type of data.

Abstract: Provided are nonvolatile memory devices and program methods thereof. an integrated circuit memory system includes a memory array comprising at least one magnetic track, each of the at least one magnetic track including a plurality of magnetic domains and at least one read/write unit coupled thereto, decoding circuitry coupled to the memory array that is operable to select at least one of the magnetic domains, a read/write controller coupled to the memory array that is operable to read data from at least one of the plurality of magnetic domains and to write data to at least one of the plurality of magnetic domains via the at least one read/write unit coupled to each of the at least one magnetic track, and a domain controller coupled to memory array that is operable to move data between the magnetic domains on each of the at least one magnetic track.

Abstract: Bonding pads for integrated circuits include first and second spaced apart conductive layers, a third continuous conductive layer between the first and second spaced apart and an array of unaligned spaced apart insulating islands in the third continuous conductive layer and extending therethrough such that sidewalls of the array of insulating islands are surrounded by the third continuous conductive layer, rows of unaligned spaced apart insulating islands. The array can include rows of unaligned spaced apart insulating islands and columns of unaligned spaced apart insulating islands. The array of unaligned spaced apart insulating islands can also include a first insulating island having a first edge in a first direction and a second insulating island, adjacent to the first insulating island in the first direction having a second edge in the first direction that is unaligned with first edge.

Abstract: Bonding pads for integrated circuits include first and second spaced apart conductive layers, a third continuous conductive layer between the first and second spaced apart and an array of unaligned spaced apart insulating islands in the third continuous conductive layer and extending therethrough such that sidewalls of the array of insulating islands are surrounded by the third continuous conductive layer, rows of unaligned spaced apart insulating islands. The array can include rows of unaligned spaced apart insulating islands and columns of unaligned spaced apart insulating islands. The array of unaligned spaced apart insulating islands can also include a first insulating island having a first edge in a first direction and a second insulating island, adjacent to the first insulating island in the first direction having a second edge in the first direction that is unaligned with first edge.