Abstract: A cathode structure for a field emission device, which is an essential component of a field emission device, and a method of fabricating the same are provided. An emitter material for electron emission constituting cathodes is formed in a particulate emitter, the particulate emitter is formed of a material from which electrons can be easily emitted at a low electric field. A significant advantage of the present invention over a conventional art is that the present invention patterns an emitter material to a cathode electrode using a photolithography process or a lift-off process. In the lift-off process, the emitting compound is patterned using a sacrifice layer. Also, in another embodiment of the present invention, there is disclosed a method of easily fabricating cathodes for a triode-type field emission device using a particulate emitter material at a low process temperature.

Abstract: The present invention relates to a cathode for use in a field emission device. In a triode-type cathode for use in an electron emission device being a core component constituting a field emission device, the present invention includes forming a catalytic layer at the sidewall of a gate hole and then growing an emitter in the catalytic layer, thus uniformly distributing an electric field generated by a voltage applied to a gate electrode over the emitter. Therefore, the present invention can improve the brightness contrast at a low anode voltage and also can control electrons emitted from the emitter only with the gate voltage.

Abstract: A high-resolution field emission display that applies a field emission device(or a field emission array) being an electron source element to a flat panel display device. The field emission display includes an upper plate and a lower plate that fac each other, wherein the lower plate and the upper plate are vacuum-packaged in parallel positions. A dot pixel of the lower plate includes a high-voltage amorphous silicon thin film transistor formed on the glass substrate of the lower plate, a diode type field emission film partially formed on the drain of the high-voltage amorphous silicon TFT, a passivation insulation layer formed on the high-voltage amorphous silicon TFT and the lateral side of the diode type field emission film, and an electron beam focusing electrode/light-shading film which vertically overlaps with the high-voltage amorphous silicon TFT on some parts of the passivation insulation layer and is formed on a lateral side of the diode type field emission film.

Abstract: A method for manufacturing a semiconductor package comprising the steps of (a) forming a plurality of bumps on a metal frame and a bridge for connecting and supporting the bumps, (b) coating liquid solder on the bumps, (c) aligning the frame with respect to a semiconductor substrate where patterns are formed so that the bumps are positioned on the patterns, (d) soldering the bumps on the patterns, and (e) separating the bumps from the frame by breaking a connecting portion of the bumps and the bridge.

Abstract: A cathode structure for a field emission device, which is an essential component of a field emission device, and a method of fabricating the same are provided. An emitter material for electron emission constituting cathodes is formed in a particulate emitter, the particulate emitter is formed of a material from which electrons can be easily emitted at a low electric field. A significant advantage of the present invention over a conventional art is that the present invention patterns an emitter material to a cathode electrode using a photolithography process or a lift-off process. In the lift-off process, the emitting compound is patterned using a sacrifice layer. Also, in another embodiment of the present invention, there is disclosed a method of easily fabricating cathodes for a triode-type field emission device using a particulate emitter material at a low process temperature.

Abstract: A chip-size package includes a semiconductor chip having a plurality of input/output pads on an active surface and a passivation layer covering the active surface such that the pads are exposed. Attached to the chip is a substrate having a plurality of electrically conductive traces and corresponding terminal pads therein. A bottom portion of each of the traces is exposed at the bottom surface of the substrate so that the traces are mechanically and electrically bonded to one of the input/output pads. The terminal pads are formed on a top portion of each of the traces and are exposed to a top surface of the substrate. Accordingly, the terminal pads are not limited to being located over the center or the periphery of the chip where the input/output pads are located, but rather can be arranged over the entire area of the chip to produce a chip-size package capable of mass production.

Abstract: The invention is to provide the method for fabricating the spacers which are mechanically strong and have lower outgassing rate. Spacers in this invention are made of photosensitive glass. A net shaped photosensitive glass is etched by a first photolithography process and then the side wall of it is etched again by a second photolithography process for improving the efficiency of evacuation of the internal cavity of an FED.

Abstract: Evacuation of the volume of a field emission display can be carried out more easily by attaching the auxiliary chamber of various shape to the main space of a field emission display, which enlarge the volume of the field emission display. Several types of auxiliary chambers are attached to the main space of a field emission display and the resultant structures are described. The main purpose of the present invention is to introduce the method of providing the space for placing getters and increasing the conductance of the system to evacuate by enlarging the total volume of the field emission display.

Abstract: This invention describes the new structure of a field emission cathode based flat panel display that comprises a main space and an attached auxiliary space, whose volume is larger than that of the main space. In this structure evacuation of the volume of the FED can be carried out more easily. Also getters to eliminate a build up of pressure after sealing off process can be included in the auxiliary tank and high vacuum can be maintained for the lifetime of the FED.