Abstract: The present invention relates to an antigen-binding molecule comprising a heavy chain variable region comprising a heavy-chain complementarity-determining region 1 (HCDR1) comprising an amino acid sequence represented by Sequence No. 1, an HCDR2 comprising an amino acid sequence represented by Sequence No. 2, and an HCDR3 comprising an amino acid sequence represented by Sequence No. 3; a light-chain variable region comprising a light-chain complementarity-determining region 1 (LCDR1) comprising an amino acid sequence represented by Sequence No. 4, an LCDR2 comprising an amino acid sequence represented by Sequence No. 5, and an LCDR3 comprising an amino acid sequence represented by Sequence No. 6; wherein the antigen-binding molecule is a T cell receptor (TCR); and to a cell line expressing the same.

Abstract: A chemical probe field effect transistor (10) for measuring surface potential as a function of temperature and used for chemical sensing. Source and drain regions (14, 16) in a semiconductor substrate (12) define a channel region (34). A gate insulating layer (18) covers the channel region, and a gate electrode layer (20) is disposed above the gate insulating layer to provide a gap (22) between the gate insulating layer and the gate electrode layer. This gap permits a fluid to contact an exposed surface (28) of the gate electrode layer. A heating layer (30) is disposed overlying the gate electrode layer to regulate its temperature. The surface potential of the gate electrode layer changes in response to the presence of certain chemicals in the contacting fluid.

Abstract: An embodiment of a sensing element (10) for a gas vapor detector (24) is formed from a gold-palladium alloy. The sensing element (10) is highly sensitive to phosphine or arsine gas. The by volume palladium concentration of the sensing element is typically less than 20%. The sensing element (10) is used as an active element in a gas vapor detector (24).