Patents by Inventor Young-Sang Youn
Young-Sang Youn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10933401Abstract: The present invention relates to a magnetic cesium adsorbent, a preparation method therefor, and a cesium removal method using the same, the preparation method comprising the steps of: (a) preparing a metal hexacyanoferrate; and (b) hydrothermally reacting the metal hexacyanoferrate so as to prepare a metal hexacyanoferrate having a rhombohedral crystal structure.Type: GrantFiled: July 4, 2017Date of Patent: March 2, 2021Assignee: KOREA ATOMIC ENERGY RESEARCH INSTITUTEInventors: Tae Hong Park, Young Jin Cho, Sang Eun Bae, Sang Ho Lim, Jai Il Park, Young Sang Youn, Jei Won Yeon
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Patent number: 10424503Abstract: A method of manufacturing a semiconductor device includes forming a plurality of fins by forming a plurality of first device isolating trenches repeated at a first pitch in a substrate, forming a plurality of fin-type active areas protruding from a top surface of a first device isolating layer by forming the first device isolating layer in the plurality of first device isolating trenches, forming a plurality of second device isolating trenches at a pitch different from the first pitch by etching a portion of the substrate and the first device isolating layer, and forming a second device isolating layer in the plurality of second device isolating trenches, so as to form a plurality of fin-type active area groups separated from each other with the second device isolating layer therebetween.Type: GrantFiled: January 31, 2018Date of Patent: September 24, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Young-sang Youn, Myung-geun Song, Ji-hoon Cha, Jae-jik Baek, Bo-un Yoon, Jeong-nam Han
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Publication number: 20190210004Abstract: The present invention relates to a magnetic cesium adsorbent, a preparation method therefor, and a cesium removal method using the same, the preparation method comprising the steps of: (a) preparing a metal hexacyanoferrate; and (b) hydrothermally reacting the metal hexacyanoferrate so as to prepare a metal hexacyanoferrate having a rhombohedral crystal structure.Type: ApplicationFiled: July 4, 2017Publication date: July 11, 2019Applicant: KOREA ATOMIC ENERGY RESEARCH INSTITUTEInventors: Tae Hong PARK, Young Jin CHO, Sang Eun BAE, Sang Ho LIM, Jai Il PARK, Young Sang YOUN, Jei Won YEON
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Patent number: 10090190Abstract: A method of manufacturing a semiconductor device includes forming a plurality of fins by forming a plurality of first device isolating trenches repeated at a first pitch in a substrate, forming a plurality of fin-type active areas protruding from a top surface of a first device isolating layer by forming the first device isolating layer in the plurality of first device isolating trenches, forming a plurality of second device isolating trenches at a pitch different from the first pitch by etching a portion of the substrate and the first device isolating layer, and forming a second device isolating layer in the plurality of second device isolating trenches, so as to form a plurality of fin-type active area groups separated from each other with the second device isolating layer therebetween.Type: GrantFiled: June 29, 2017Date of Patent: October 2, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Young-sang Youn, Myung-Geun Song, Ji-hoon Cha, Jae-jik Baek, Bo-un Yoon, Jeong-nam Han
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Publication number: 20180174889Abstract: A method of manufacturing a semiconductor device includes forming a plurality of fins by forming a plurality of first device isolating trenches repeated at a first pitch in a substrate, forming a plurality of fin-type active areas protruding from a top surface of a first device isolating layer by forming the first device isolating layer in the plurality of first device isolating trenches, forming a plurality of second device isolating trenches at a pitch different from the first pitch by etching a portion of the substrate and the first device isolating layer, and forming a second device isolating layer in the plurality of second device isolating trenches, so as to form a plurality of fin-type active area groups separated from each other with the second device isolating layer therebetween.Type: ApplicationFiled: January 31, 2018Publication date: June 21, 2018Inventors: Young-Sang Youn, Myung-geun Song, Ji-hoon Cha, Jae-jik Baek, Bo-un Yoon, Jeong-nam Han
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Publication number: 20170301581Abstract: A method of manufacturing a semiconductor device includes forming a plurality of fins by forming a plurality of first device isolating trenches repeated at a first pitch in a substrate, forming a plurality of fin-type active areas protruding from a top surface of a first device isolating layer by forming the first device isolating layer in the plurality of first device isolating trenches, forming a plurality of second device isolating trenches at a pitch different from the first pitch by etching a portion of the substrate and the first device isolating layer, and forming a second device isolating layer in the plurality of second device isolating trenches, so as to form a plurality of fin-type active area groups separated from each other with the second device isolating layer therebetween.Type: ApplicationFiled: June 29, 2017Publication date: October 19, 2017Inventors: Young-Sang Youn, Myung-geun Song, Ji-hoon Cha, Jae-jik Baek, Bo-un Yoon, Jeong-nam Han
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Patent number: 9728535Abstract: A method of manufacturing a semiconductor device includes forming a plurality of fins by forming a plurality of first device isolating trenches repeated at a first pitch in a substrate, forming a plurality of fin-type active areas protruding from a top surface of a first device isolating layer by forming the first device isolating layer in the plurality of first device isolating trenches, forming a plurality of second device isolating trenches at a pitch different from the first pitch by etching a portion of the substrate and the first device isolating layer, and forming a second device isolating layer in the plurality of second device isolating trenches, so as to form a plurality of fin-type active area groups separated from each other with the second device isolating layer therebetween.Type: GrantFiled: March 2, 2016Date of Patent: August 8, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Young-sang Youn, Myung-geun Song, Ji-hoon Cha, Jae-jik Baek, Bo-un Yoon, Jeong-nam Han
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Patent number: 9613811Abstract: A first protective layer, a mask layer, a second protective layer and a photoresist layer are sequentially formed on a substrate. A photoresist pattern is formed by partially removing the photoresist layer. An ion implantation mask is formed by sequentially etching the second protective layer, the mask layer and the first protective layer using the photoresist pattern. The ion implantation mask exposes the substrate. Impurities are implanted in an upper portion of the substrate exposed by the ion implantation mask.Type: GrantFiled: October 28, 2014Date of Patent: April 4, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae-Jik Baek, Sang-Jine Park, Bo-Un Yoon, Young-Sang Youn, Ji-Min Jeong, Ji-Hoon Cha
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Publication number: 20160181243Abstract: A method of manufacturing a semiconductor device includes forming a plurality of fins by forming a plurality of first device isolating trenches repeated at a first pitch in a substrate, forming a plurality of fin-type active areas protruding from a top surface of a first device isolating layer by forming the first device isolating layer in the plurality of first device isolating trenches, forming a plurality of second device isolating trenches at a pitch different from the first pitch by etching a portion of the substrate and the first device isolating layer, and forming a second device isolating layer in the plurality of second device isolating trenches, so as to form a plurality of fin-type active area groups separated from each other with the second device isolating layer therebetween.Type: ApplicationFiled: March 2, 2016Publication date: June 23, 2016Inventors: Young-sang Youn, Myung-geun Song, Ji-hoon Cha, Jae-jik Baek, Bo-un Yoon, Jeong-nam Han
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Patent number: 9305825Abstract: A method of manufacturing a semiconductor device includes forming a plurality of fins by forming a plurality of first device isolating trenches repeated at a first pitch in a substrate, forming a plurality of fin-type active areas protruding from a top surface of a first device isolating layer by forming the first device isolating layer in the plurality of first device isolating trenches, forming a plurality of second device isolating trenches at a pitch different from the first pitch by etching a portion of the substrate and the first device isolating layer, and forming a second device isolating layer in the plurality of second device isolating trenches, so as to form a plurality of fin-type active area groups separated from each other with the second device isolating layer therebetween.Type: GrantFiled: February 7, 2014Date of Patent: April 5, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Young-sang Youn, Myung-geun Song, Ji-hoon Cha, Jae-jik Baek, Bo-un Yoon, Jeong-nam Han
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Publication number: 20150162197Abstract: A first protective layer, a mask layer, a second protective layer and a photoresist layer are sequentially formed on a substrate. A photoresist pattern is formed by partially removing the photoresist layer. An ion implantation mask is formed by sequentially etching the second protective layer, the mask layer and the first protective layer using the photoresist pattern. The ion implantation mask exposes the substrate. Impurities are implanted in an upper portion of the substrate exposed by the ion implantation mask.Type: ApplicationFiled: October 28, 2014Publication date: June 11, 2015Inventors: Jae-Jik BAEK, Sang-Jine Park, Bo-Un Yoon, Young-Sang Youn, Ji-Min Jeong, Ji-Hoon Cha
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Patent number: 9040415Abstract: A method for forming a trench includes etching an oxide layer to form a trench therein, conformally forming a first reaction layer along a surface of the trench, the first reaction layer including a first region on an upper portion of the trench and a second region on a lower portion of the trench, forming a barrier layer by reacting a first amount of etching gas with the first region of the first reaction layer, and etching the oxide layer on a lower portion of the second region by reacting a second amount of etching gas with the second region of the first reaction layer, the second amount of etching gas being greater than the first amount of etching gas.Type: GrantFiled: May 23, 2014Date of Patent: May 26, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Sang-Jine Park, Bo-Un Yoon, Young-Sang Youn, Jeong-Nam Han, Kee-Sang Kwon, Doo-Sung Yun, Byung-Kwon Cho, Ji-Hoon Cha
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Publication number: 20150050793Abstract: A method for forming a trench includes etching an oxide layer to form a trench therein, conformally forming a first reaction layer along a surface of the trench, the first reaction layer including a first region on an upper portion of the trench and a second region on a lower portion of the trench, forming a barrier layer by reacting a first amount of etching gas with the first region of the first reaction layer, and etching the oxide layer on a lower portion of the second region by reacting a second amount of etching gas with the second region of the first reaction layer, the second amount of etching gas being greater than the first amount of etching gas.Type: ApplicationFiled: May 23, 2014Publication date: February 19, 2015Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang-Jine PARK, Bo-Un YOON, Young-Sang YOUN, Jeong-Nam HAN, Kee-Sang KWON, Doo-Sung YUN, Byung-Kwon CHO, Ji-Hoon CHA
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Publication number: 20140227857Abstract: A method of manufacturing a semiconductor device includes forming a plurality of fins by forming a plurality of first device isolating trenches repeated at a first pitch in a substrate, forming a plurality of fin-type active areas protruding from a top surface of a first device isolating layer by forming the first device isolating layer in the plurality of first device isolating trenches, forming a plurality of second device isolating trenches at a pitch different from the first pitch by etching a portion of the substrate and the first device isolating layer, and forming a second device isolating layer in the plurality of second device isolating trenches, so as to form a plurality of fin-type active area groups separated from each other with the second device isolating layer therebetween.Type: ApplicationFiled: February 7, 2014Publication date: August 14, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: YOUNG-SANG YOUN, MYUNG-GEUN SONG, JI-HOON CHA, JAE-JIK BAEK, BO-UN YOON, JEONG-NAM HAN
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Publication number: 20140206169Abstract: A method of forming a semiconductor device can include providing a plasma nitrided exposed top surface including an active region and an isolation region. The exposed top surface including the active region and the isolation region can be subjected to etching to form a deeper recess in the active region that in the isolation region and an unmerged epitaxial stress film can be grown in the deeper recess.Type: ApplicationFiled: March 15, 2013Publication date: July 24, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Ji Hoon Cha, Jae-Jik Baek, Bo-Un Yoon, Young-Sang Youn, Jeong-Nam Han