Abstract: The present disclosure describes methods and systems, including computer-implemented methods, computer program products, and computer systems for applying orthogonalization filtering to wavefield separation. One computer-implemented method includes obtaining multi-component wavefields, performing wavefield separation on the multi-component wavefields to obtain separated wavefields, and applying a local orthogonalization weight (LOW) filtering to the separated wavefields to obtain filtered wavefields.

Abstract: The present disclosure describes methods and systems, including computer-implemented methods, computer program products, and computer systems, for generating a velocity model for a subsurface area.

Abstract: The present disclosure describes methods and systems, including computer-implemented methods, computer program products, and computer systems, for generating geophysical images.

Abstract: The present invention discloses a method for fabricating a semiconductor device. In a process for forming a bit line contact plug and storage electrode contact plug for the high integration semiconductor device, a MOSFET is formed, a device isolating insulating film protective film is formed at the upper portion of the resultant structure, a sacrificed insulating film pattern is formed at the upper portion of a contact region, an interlayer insulating film is formed and etched according to the CMP process to expose the sacrificed insulating film pattern, the device isolating insulating film protective film formed in the contact region is removed, and a contact plug is formed. That is, the etching process for exposing the contact region is performed on a device isolating insulating film, thereby preventing damage of the semiconductor substrate, improving a contact property, and restricting current leakage due to the damaged device isolating insulating film.

Abstract: The present invention discloses a method for fabricating a semiconductor device. In a process for forming a bit line contact plug and storage electrode contact plug for the high integration semiconductor device, a MOSFET is formed, a device isolating insulating film protective film is formed at the upper portion of the resultant structure, a sacrificed insulating film pattern is formed at the upper portion of a contact region, an interlayer insulating film is formed and etched according to the CMP process to expose the sacrificed insulating film pattern, the device isolating insulating film protective film formed in the contact region is removed, and a contact plug is formed. That is, the etching process for exposing the contact region is performed on a device isolating insulating film, thereby preventing damage of the semiconductor substrate, improving a contact property, and restricting current leakage due to the damaged device isolating insulating film.