Abstract: A pattern matching method for use in manufacturing a semiconductor memory device increases a pattern matching rate between a GDS image and an SEM image. The pattern matching method includes extracting a scanning electron microscope (SEM) image and a graphic data system (GDS) image to perform a pattern matching; performing a two-dimensional Fourier transform (FFT) for the extracted GDS image and analyzing a low spatial frequency; deciding whether or not a pattern is a repeated pattern or non-repeated pattern by using the analyzed low spatial frequency; and limiting an X/Y range for a pattern matching when the decision result is for the repeated pattern, and then performing the pattern matching between the SEM image and the GDS image.

Abstract: An optical proximity correction (OPC) system and methods thereof are provided. The example OPC system may include an integrated circuit (IC) layout generation unit generating an IC layout, a database unit storing a first plurality of OPC models, each of the first plurality of OPC models associated with one of a plurality of target specific characteristics and a mask layout generation unit including a model selector selecting a second plurality of OPC models based on a comparison between the target specific characteristics associated with the plurality of OPC models and the generated IC layout, the mask layout generation unit generating a mask layout based on the IC layout and the selected second plurality of OPC models.

Abstract: A pattern matching method for use in manufacturing a semiconductor memory device increases a pattern matching rate between a GDS image and an SEM image. The pattern matching method includes extracting a scanning electron microscope (SEM) image and a graphic data system (GDS) image to perform a pattern matching; performing a two-dimensional furrier transform (FFT) for the extracted GDS image and analyzing a low spatial frequency; deciding whether or not a pattern is a repeated pattern or non-repeated pattern by using the analyzed low spatial frequency; and limiting an X/Y range for a pattern matching when the decision result is for the repeated pattern, and then performing the pattern matching between the SEM image and the GDS image.

Abstract: Provided is a method of fabricating a photo mask. The method includes preparing a model group including optical proximity correction (OPC) models and generating a preliminary mask layout using an integrated circuit (IC) layout. A contour image may be produced from the preliminary mask layout through a simulation using an optical model. Subsequently, the preliminary mask layout may be compared with the contour image and the comparison result may be analyzed to produce analysis data for providing criteria used in selecting an OPC model. An OPC model suitable for the preliminary mask layout may be selected from the model group based on the analysis data. An OPC process may be performed on the preliminary mask layout using the selected OPC model to generate a mask layout.

Abstract: A global matching method for semiconductor memory device fabrication may include extracting a graphic data system (GDS) image and a scanning electron microscope (SEM) image of patterns in a region on a wafer. First directional edges extending in a first direction and second directional edges extending in a second direction may be separately extracted from each of the GDS image and the SEM image with the first and second directions being different. The GDS image and the SEM image may be matched with respect to either the first directional edges or the second directional edges which are relatively shorter. After the relatively shorter edges of the GDS image and the SEM image are matched, the GDS image and the SEM image may be matched with respect to relatively longer edges, based on a result of the matching with respect to the relatively shorter edges, thereby completing pattern matching of the GDS image and the SEM image.

Abstract: A photomask includes a transparent substrate, and a plurality of light-shielding patterns repeatedly aligned on the transparent substrate in two dimensions. Each of the light-shielding patterns has length and width measurements that differ from each other. Further, the photomask includes at least one through hole penetrating a portion of each of the light-shielding patterns to expose the transparent substrate.

Abstract: A mask for photolithography with high exposure margin and a method of fabricating a photoresist pattern, using the mask are provided. The mask for photolithography includes a transparent substrate and a plurality of optical shielding members on the transparent substrate. Each optical shielding member includes a plurality of optical shielding layer segments which are separated from one another or which are connected to one another in their edges. The optical shielding member forms one image in which the optical shielding layer segments are connected to one another, upon photolithography.

Abstract: Provided is a method of fabricating a photo mask. The method includes preparing a model group including optical proximity correction (OPC) models and generating a preliminary mask layout using an integrated circuit (IC) layout. A contour image may be produced from the preliminary mask layout through a simulation using an optical model. Subsequently, the preliminary mask layout may be compared with the contour image and the comparison result may be analyzed to produce analysis data for providing criteria used in selecting an OPC model. An OPC model suitable for the preliminary mask layout may be selected from the model group based on the analysis data. An OPC process may be performed on the preliminary mask layout using the selected OPC model to generate a mask layout.

Abstract: An optical proximity correction (OPC) system and methods thereof are provided. The example OPC system may include an integrated circuit (IC) layout generation unit generating an IC layout, a database unit storing a first plurality of OPC models, each of the first plurality of OPC models associated with one of a plurality of target specific characteristics and a mask layout generation unit including a model selector selecting a second plurality of OPC models based on a comparison between the target specific characteristics associated with the plurality of OPC models and the generated IC layout, the mask layout generation unit generating a mask layout based on the IC layout and the selected second plurality of OPC models.

Abstract: In an optical system for forming a photoresist pattern on a substrate, an optical element such as a holographic optical element and an aperture plate provides an off-axis illumination beam having a hexapole. The photoresist pattern is formed to form structures such as contact pads, and includes first holes and second holes repeatedly arranged on the substrate. The hexapole includes four first poles symmetrically disposed with respect to an x-axis and a y-axis, and two second poles disposed in the x-axis so as to be symmetric with respect to the y-axis. The off-axis illumination beam may improve a resolution of the photoresist pattern and a depth of focus (DOF) of a light beam to be projected onto the substrate.

Abstract: A method of designing a phase grating pattern provides a modified form of illumination for a main mask, optimum for producing one or more target patterns on a wafer in a photolithographic process. Once the target pattern(s) to be formed on the wafer are decided, an area to be occupied by at least a portion of the phase grating is divided into a plurality of subcells, initial phase values are assigned to each of the subcells, and one of the subcells is randomly selected and the phase value last assigned thereto is changed, and the process is repeated. The process is in an iteration that changes the arrangement of the phase values assigned to the subcells until they converge on one which will provide the design for a phase grating which will produce a modified form of illumination optimum for use in forming the target pattern(s) on the wafer.

Abstract: In an optical system for forming a photoresist pattern on a substrate, an optical element such as a holographic optical element and an aperture plate provides an off-axis illumination beam having a hexapole. The photoresist pattern is formed to form structures such as contact pads, and includes first holes and second holes repeatedly arranged on the substrate. The hexapole includes four first poles symmetrically disposed with respect to an x-axis and a y-axis, and two second poles disposed in the x-axis so as to be symmetric with respect to the y-axis. The off-axis illumination beam may improve a resolution of the photoresist pattern and a depth of focus (DOF) of a light beam to be projected onto the substrate.

Abstract: A photomask includes a transparent substrate, and a plurality of light-shielding patterns repeatedly aligned on the transparent substrate in two dimensions. Each of the light-shielding patterns has length and width measurements that differ from each other. Further, the photomask includes at least one through hole penetrating a portion of each of the light-shielding patterns to expose the transparent substrate.

Abstract: A method of designing a phase grating pattern provides a modified form of illumination for a main mask, optimum for producing one or more target patterns on a wafer in a photolithographic process. Once the target pattern(s) to be formed on the wafer are decided, an area to be occupied by at least a portion of the phase grating is divided into a plurality of subcells, initial phase values are assigned to each of the subcells, and one of the subcells is randomly selected and the phase value last assigned thereto is changed, and the process is repeated. The process is in an iteration that changes the arrangement of the phase values assigned to the subcells until they converge on one which will provide the design for a phase grating which will produce a modified form of illumination optimum for use in forming the target pattern(s) on the wafer.