Abstract: The present invention relates to a method for manufacturing spikes for sports shoes, the method comprising: a primary injection-molding step for fixing a plurality of spike pin heads to one surface of a first fixed plate when injection-molding the first fixed plate such that the tip ends of the plurality of spike pins are exposed through the surface of the first fixed plate; a secondary injection-molding step for fixing a plurality of first fixed plates to one surface of a second fixed plate when injection-molding the second fixed plate, wherein the surfaces of the first fixed plates that are opposite to the surfaces to which the spike pines are fixed to the second fixed plate; and a second-fixed-plate fixing step for fixing, to the bottom of an outsole, the surface of the second fixed plate opposite to the surface to which the first fixed plates are fixed.

Abstract: The present invention relates to a flexible color filter for a display device, a flexible organic light-emitting display device comprising the color filter, and a manufacturing method therefor and, more specifically, to a flexible color filter having a structure in which a base film, an adhesive layer, a separation layer, a protective layer, a black matrix layer, a pixel layer formed between the black matrix layer, and a planarization layer are sequentially stacked. The flexible color filter having the structure can be manufactured on a glass substrate, and thus advantages of solving a problem of thermal deformation of a plastic substrate in a high temperature process for implementing a color filter, enabling a fine pitch of a pattern, which cannot be implemented on a plastic substrate, and enabling diversification without limitations for a material of a base film can be secured.

Abstract: A flexible display includes a flexible substrate that includes an active area, a pad area extending from the active area, and a bend allowance section extending from the pad area. A first buffer layer is disposed on the flexible substrate and includes at least three layers. A first insulation layer is disposed on the first buffer layer in the pad area, a gate line is disposed on the first insulation layer and extends from the active area to the pad area, a second insulation layer is disposed on the gate line in the pad area, a connection line is electrically connected to the gate line, and a second buffer layer covers the connection line. A top layer among the at least three layers of the first buffer layer is disposed in the active area and the pad area, a lower layer which is in contact with the top layer extends to the bend allowance section and a thickness of the lower layer bend allowance section is less than a thickness of the lower layer in the other areas.

Abstract: Provided is a regenerative blower. According to an illustrative embodiment of the present invention, the regenerative blower comprises an impeller comprising a plurality of blades disposed spaced apart in the circumferential direction, wherein, in the plurality of blades, each blade gap is arranged at an incremental angle (??i).

Abstract: In a method of manufacturing an MRAM device, a lower electrode and a preliminary first free layer pattern sequentially stacked are formed on a substrate. An upper portion of the preliminary first free layer pattern is removed to form a first free layer pattern. A second free layer and a tunnel barrier layer are sequentially formed on the first free layer pattern. The second free layer is partially oxidized to form a second free layer pattern. A fixed layer structure is formed on the tunnel barrier layer.

Abstract: In a method of manufacturing an MRAM device, a lower electrode and a preliminary first free layer pattern sequentially stacked are formed on a substrate. An upper portion of the preliminary first free layer pattern is removed to form a first free layer pattern. A second free layer and a tunnel barrier layer are sequentially formed on the first free layer pattern. The second free layer is partially oxidized to form a second free layer pattern. A fixed layer structure is formed on the tunnel barrier layer.

Abstract: Provided is a memory device, including a memory element on a substrate; a protection insulating pattern covering a side surface of the memory element and exposing a top surface of the memory element; an upper mold layer on the protection insulating pattern; and a bit line on and connected to the memory element, the bit line extending in a first direction, the protection insulating pattern including a first protection insulating pattern covering a lower side surface of the memory element; and a second protection insulating pattern covering an upper side surface of the memory element and including a different material from the first protection insulating pattern.

Abstract: A deposition apparatus according to an exemplary embodiment of the present invention includes: a reactor; a plasma chamber connected to the reactor; a plasma electrode mounted inside of the plasma chamber; and a gas supply plate coupled with the plasma chamber to supply gas into the plasma chamber, wherein a plurality of gas holes is formed at an inner wall of the gas supply plate, and the plurality of gas supply holes is spaced apart from each other by a predetermined interval.

Abstract: A regenerative fluid machine having guide vanes on a flow channel wall is disclosed. The regenerative fluid machine includes a circular plate-shaped impeller having a plurality of vanes radially formed on an outer circumference thereof at regular intervals, casings in which the impeller is housed, and flow channels, each of which has a suction hole and a discharge hole in opposite ends thereof, and which are circumferentially disposed within the casings so as to face the vanes. The plurality of guide vanes having an inclined angle (?) with respect to a radial direction protrude from the flow channel wall in a rotational direction of the impeller so that a relative inflow angle (?) of the fluid introduced into the impeller grooves is increased and thus an absolute inflow angle (?) is decreased.

Abstract: Disclosed is a multi-volute sirocco fan (multiblade fan). The present invention relates to a multi-volute sirocco fan configured to discharge fluid into several directions while using one motor and one fan. The sirocco fan according to the present invention comprises: a driving motor; a fan connected to a rotation shaft of the driving motor to thus be rotated therewith, the fan having a plurality of vanes arranged and installed in a cylindrical shape along the circumferential direction thereof; and at least two stacked volutes in the center of which the fan is arranged and installed and which guide the fluid while the cross-sectional area formed by the upper and lower surfaces, side surfaces thereof and the outer circumferential surface of the fan is linearly increased.

Abstract: A method for designing a centrifugal pump and a mixed flow pump having a specific speed of 150-1200 of the present invention comprises: a design specification determination step for a turbo pump including an impeller; a specific speed determination step for the impeller; a design variable determination step for the impeller; and a three dimensional shape deriving step for the impeller. According to the present invention, the three dimensional shape of the impeller can be simply designed by converting the design variables related to the specific speed into a function and by putting optimized design variables into a database.

Abstract: A substrate transporting arm and a substrate transporting apparatus to prevent a substrate from sliding and increase a process speed of the substrate, thereby improving productivity. The substrate transporting arm includes a body and a plurality of substrate supporters coupled to the body. Each of the plurality of substrate supporters includes a substrate holder and a substrate supporter pin, and an inner side of the substrate holder includes an inclined portion.

Abstract: A substrate transporting arm and a substrate transporting apparatus including the same prevent a substrate from sliding and increase a process speed of the substrate, thereby improving productivity. The substrate transporting arm includes a body and a plurality of substrate supporters coupled to the body.

Abstract: Provided is a memory device, including a memory element on a substrate; a protection insulating pattern covering a side surface of the memory element and exposing a top surface of the memory element; an upper mold layer on the protection insulating pattern; and a bit line on and connected to the memory element, the bit line extending in a first direction, the protection insulating pattern including a first protection insulating pattern covering a lower side surface of the memory element; and a second protection insulating pattern covering an upper side surface of the memory element and including a different material from the first protection insulating pattern.

Abstract: Capacitor of a semiconductor device, and a method of fabricating the same, include sequentially forming a mold structure and a polysilicon pattern over a semiconductor substrate, patterning the mold structure using the polysilicon pattern as an etch mask to form lower electrode holes penetrating the mold structure, forming a protection layer covering a surface of the polysilicon pattern, forming lower electrodes in the lower electrode holes provided with the protection layer, removing the polysilicon pattern and the protection layer to expose upper sidewalls of the lower electrodes, removing the mold structure to expose lower sidewalls of the lower electrodes, and sequentially forming a dielectric and an upper electrode covering the lower electrodes.

Abstract: In a method of manufacturing an MRAM device, a lower electrode and a preliminary first free layer pattern sequentially stacked are formed on a substrate. An upper portion of the preliminary first free layer pattern is removed to form a first free layer pattern. A second free layer and a tunnel barrier layer are sequentially formed on the first free layer pattern. The second free layer is partially oxidized to form a second free layer pattern. A fixed layer structure is formed on the tunnel barrier layer.

Abstract: A lateral flow atomic layer deposition device according to an exemplary embodiment of the present invention eliminates a gas flow control plate in a conventional lateral flow atomic layer deposition device and controls shapes of a gas input part and a gas output part in a reactor cover to make a gas flow path to a center of a substrate shorter than a gas flow path to an edge of the substrate and thereby increase the amount of gas per unit area flowing to the center of the substrate. Therefore, film thickness in the center of the substrate in the lateral flow reactor increases.

Abstract: A TFT array substrate is provided. The TFT array substrate includes a gate electrode connected to a gate line; a source electrode connected to a data line, the data line crossing the gate line to define a pixel region; a drain electrode facing the source electrode with a channel interposed therebetween; a semiconductor layer forming the channel between the source electrode and the drain electrode; a channel passivation layer formed on the channel to protect the semiconductor layer; a pixel electrode disposed in the pixel region to contact with the drain electrode; a storage capacitor including the pixel electrode extending over the gate line to form a storage area on a gate insulating layer on which a semiconductor layer pattern and a metal layer pattern are stacked; a gate pad extending from the gate line; and a data pad connected to the data line.

Abstract: An exemplary embodiment of the present invention provides a deposition apparatus including: a substrate support for supporting a substrate; a reaction chamber wall defining a reaction chamber and contacting the substrate support; a plurality of gas inlets connected to the reaction chamber wall; a remote plasma unit connected to at least one of the plurality of gas inlets; and a gas-supplying path connected to the plurality of gas inlets and defining a reaction region along with the substrate support. A plurality of gases passing through the plurality of gas inlets move along the gas-supplying path to be directly supplied onto the substrate without contacting other parts of the reactor.