Abstract: A leakage current detection circuit includes: a mirror circuit configured to copy a leakage current flowing through a node and generate a copy current in a copy node; an oscillation circuit including a charge storage unit, the oscillation circuit being connected to the copy node, charged with the copy current, and configured to generate an oscillation signal by charging and discharging the charge storage unit; and a calculation circuit configured to calculate an amount of the leakage current based on the oscillation signal.

Abstract: A camera module includes a housing, a reflective member positioned in the housing and changing a direction of light to a direction of an optical axis, a carrier carrying the reflective member and rotatable about a first axis with respect to the housing, and a first ball group disposed between the housing and the carrier, wherein the first ball group includes a main ball member providing the first axis of the carrier, and an auxiliary ball member disposed away from the first axis, and one or both of the housing and the carrier partially accommodates the auxiliary ball member, and includes an auxiliary guide groove extended in a circumferential direction of the first axis.

Abstract: A folded module includes a housing, a carrier provided in the housing, and a rotation holder provided on the carrier and including a reflective member. The carrier is rotatable, with respect to the housing, around a first axis formed by one rotating shaft ball, the rotation holder is rotatable with respect to the carrier around a second axis formed by two ball members, and the first axis and the second axis intersect each other, and the one rotating shaft ball and the two ball members are provided together on a plane on which both the first axis and the second axis are provided.

Abstract: A method for fabricating a semiconductor device includes supplying a first source gas including a germanium (Ge) precursor onto a semiconductor substrate for a first time period, and periodically interrupting the supplying of the first source gas for the first time period to form Ge elements on the semiconductor substrate.

Abstract: A phase-change memory device including a phase-change region divided into multi layers and an operation method thereof are provided. The device includes a first phase-change layer to which a current is provided from a heating electrode, and a second phase-change layer formed with continuity to the first phase-change layer and having a different width from the first phase-change layer, and to which a current is provided from the heating electrode. The first and second phase-change layers include materials selected from a first group consisting of GeTe, GST415, GST315, GST225, GST124, GST147, and GST172 or a second group consisting of InSbSe, SnGeSe, GST, SnSbSe, and SiSbSe. The second phase-change layer includes a material different from the first phase-change layer, which is selected from the same group as the first phase-change layer and has smaller resistivity than the first phase-change layer.

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate in which a word line region is formed, and a barrier metal layer arranged on the word line region and causing a Schottky junction. The barrier metal layer includes a first nitride material, in which a first material is nitrified, and a second nitride material, in which a second material is nitrified. The barrier metal layer is formed of a mixture of the first nitride material and the second nitride material. At least one of the first material or the second material is rich in a metal used to form the first nitride material or the second nitride material.

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate in which a word line region is formed, and a barrier metal layer arranged on the word line region and causing a Schottky junction. The barrier metal layer includes a first nitride material, in which a first material is nitrified, and a second nitride material, in which a second material is nitrified. The barrier metal layer is formed of a mixture of the first nitride material and the second nitride material. At least one of the first material or the second material is rich in a metal used to form the first nitride material or the second nitride material.

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate in which a word line region is formed, and a barrier metal layer arranged on the word line region and causing a Schottky junction. The barrier metal layer includes a first nitride material, in which a first material is nitrified, and a second nitride material, in which a second material is nitrified. The barrier metal layer is formed of a mixture of the first nitride material and the second nitride material. At least one of the first material or the second material is rich in a metal used to form the first nitride material or the second nitride material.

Abstract: A method for fabricating a semiconductor device includes supplying a first source gas including a germanium (Ge) precursor onto a semiconductor substrate for a first time period, and periodically interrupting the supplying of the first source gas for the first time period to form Ge elements on the semiconductor substrate.

Abstract: A semiconductor memory device and a fabrication method thereof capable of improving electric contact characteristic between an access device and a lower electrode are provided. The semiconductor memory device includes an access device formed in a pillar shape on a semiconductor substrate, a first conductive layer formed over the access device, a protection layer formed on an edge of the first conductive layer to a predetermined thickness, and a lower electrode connected to the first conductive layer.

Abstract: A phase-change memory device including a multi-level cell and an operation method thereof are provided. The device includes a first phase-change material layer to which a current is provided from a heating electrode, and a second phase-change material layer formed with continuity to the first phase-change material layer and having a different width from the first phase-change material layer, and to which a current is provided from the heating electrode. The second phase-change material layer includes a material having smaller resistivity and a lower crystallization rate than the first phase-change material layer.

Abstract: A semiconductor memory device and a fabrication method thereof capable of improving electric contact characteristic between an access device and a lower electrode are provided. The semiconductor memory device includes an access device formed in a pillar shape on a semiconductor substrate, a first conductive layer formed over the access device, a protection layer formed on an edge of the first conductive layer to a predetermined thickness, and a lower electrode connected to the first conductive layer.

Abstract: A phase-change memory device with improved deposition characteristic and a method of fabricating the same are provided. The phase-change memory device includes a semiconductor substrate having a phase-change area, a first material-rich first phase-change layer forming an inner surface of the phase-change area and comprised of a hetero compound of the first material and a second material, and a second phase-change layer formed on a surface of the first phase-change layer to fill the phase-change area.

Abstract: A semiconductor memory device and a fabrication method thereof capable of improving electric contact characteristic between an access device and a lower electrode are provided. The semiconductor memory device includes an access device formed in a pillar shape on a semiconductor substrate, a first conductive layer formed over the access device, a protection layer formed on an edge of the first conductive layer to a predetermined thickness, and a lower electrode connected to the first conductive layer.

Abstract: A semiconductor memory device and a fabrication method thereof capable of improving electric contact characteristic between an access device and a lower electrode are provided. The semiconductor memory device includes an access device formed in a pillar shape on a semiconductor substrate, a first conductive layer formed over the access device, a protection layer formed on an edge of the first conductive layer to a predetermined thickness, and a lower electrode connected to the first conductive layer.

Abstract: A phase-change memory device with improved deposition characteristic and a method of fabricating the same are provided. The phase-change memory device includes a semiconductor substrate having a phase-change area, a first material-rich first phase-change layer forming an inner surface of the phase-change area and comprised of a hetero compound of the first material and a second material, and a second phase-change layer formed on a surface of the first phase-change layer to fill the phase-change area.

Abstract: A phase-change memory device with improved deposition characteristic and a method of fabricating the same are provided. The phase-change memory device includes a semiconductor substrate having a phase-change area, a first material-rich first phase-change layer forming an inner surface of the phase-change area and comprised of a hetero compound of the first material and a second material, and a second phase-change layer formed on a surface of the first phase-change layer to fill the phase-change area.

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate in which a word line region is formed, and a barrier metal layer arranged on the word line region and causing a Schottky junction. The barrier metal layer includes a first nitride material, in which a first material is nitrified, and a second nitride material, in which a second material is nitrified. The barrier metal layer is formed of a mixture of the first nitride material and the second nitride material. At least one of the first material or the second material is rich in a metal used to form the first nitride material or the second nitride material.

Abstract: A phase change memory device including a multi-level cell and a method of manufacturing the same are provided. The device includes a first phase-change material layer to which a current is provided from a heating electrode, and a second phase-change material layer formed with continuity to the first phase-change material layer and having a different width from the first phase-change material layer, and to which a current is provided from a heating electrode.

Abstract: A phase-change memory device with improved deposition characteristic and a method of fabricating the same are provided. The phase-change memory device includes a semiconductor substrate having a phase-change area, a first material-rich first phase-change layer forming an inner surface of the phase-change area and comprised of a hetero compound of the first material and a second material, and a second phase-change layer formed on a surface of the first phase-change layer to fill the phase-change area.